HK1210524A1 - Nanopillar field-effect and junction transistors with functionalized gate and base electrodes - Google Patents

Nanopillar field-effect and junction transistors with functionalized gate and base electrodes

Info

Publication number
HK1210524A1
HK1210524A1 HK15111304.1A HK15111304A HK1210524A1 HK 1210524 A1 HK1210524 A1 HK 1210524A1 HK 15111304 A HK15111304 A HK 15111304A HK 1210524 A1 HK1210524 A1 HK 1210524A1
Authority
HK
Hong Kong
Prior art keywords
nanopillar
effect
field
junction transistors
base electrodes
Prior art date
Application number
HK15111304.1A
Other languages
English (en)
Chinese (zh)
Inventor
Aditya Rajagopal
Chieh-Feng Chang
Oliver Plettenburg
Stefan Petry
Axel Scherer
Charles L Tschirhart
Original Assignee
California Inst Of Techn
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Inst Of Techn filed Critical California Inst Of Techn
Publication of HK1210524A1 publication Critical patent/HK1210524A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/413—Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nanotechnology (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Pathology (AREA)
  • Electrochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Immunology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)
HK15111304.1A 2012-07-25 2015-11-17 Nanopillar field-effect and junction transistors with functionalized gate and base electrodes HK1210524A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261675637P 2012-07-25 2012-07-25
PCT/US2013/050367 WO2014018286A1 (fr) 2012-07-25 2013-07-12 Transistors à effet de champ et à jonction de type nanopilier pourvus d'électrodes de grille et de base fonctionnalisées

Publications (1)

Publication Number Publication Date
HK1210524A1 true HK1210524A1 (en) 2016-04-22

Family

ID=49995272

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15111304.1A HK1210524A1 (en) 2012-07-25 2015-11-17 Nanopillar field-effect and junction transistors with functionalized gate and base electrodes

Country Status (6)

Country Link
US (3) US9070733B2 (fr)
EP (1) EP2877845A4 (fr)
JP (1) JP2015530564A (fr)
CN (1) CN105408740A (fr)
HK (1) HK1210524A1 (fr)
WO (1) WO2014018286A1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9099436B2 (en) 2012-03-29 2015-08-04 California Institute Of Technology Sensor probe for bio-sensing and chemical-sensing applications
CN105408740A (zh) 2012-07-25 2016-03-16 加州理工学院 具有功能化栅电极和基电极的纳米柱场效应和结型晶体管
WO2014074180A1 (fr) 2012-11-09 2014-05-15 California Institute Of Technology Transistors à effet de champ et à jonctions à colonne nanométrique
US20160169833A1 (en) * 2014-12-11 2016-06-16 International Business Machines Corporation Biosensor based on heterojunction bipolar transistor
US9564429B2 (en) * 2015-06-25 2017-02-07 International Business Machines Corporation Lateral bipolar sensor with sensing signal amplification
US9546977B1 (en) 2015-12-28 2017-01-17 International Business Machines Corporation Junction field effect transistor based biosensor
CN109328301B (zh) 2016-01-28 2021-03-12 罗斯韦尔生物技术股份有限公司 大规模并行dna测序装置
JP7280590B2 (ja) 2016-01-28 2023-05-24 ロズウェル バイオテクノロジーズ，インコーポレイテッド 大スケールの分子電子工学センサアレイを使用する被分析物を測定するための方法および装置
JP6854532B2 (ja) 2016-02-09 2021-04-07 ロズウェル バイオテクノロジーズ，インコーポレイテッド 電子的、標識フリーのｄｎａおよびゲノムシークエンシング
WO2018136148A1 (fr) 2017-01-19 2018-07-26 Roswell Biotechnologies, Inc. Dispositifs de séquençage à semi-conducteurs comprenant des matériaux de couche bidimensionnelle
US10508296B2 (en) 2017-04-25 2019-12-17 Roswell Biotechnologies, Inc. Enzymatic circuits for molecular sensors
KR102692957B1 (ko) 2017-04-25 2024-08-06 로스웰 엠이 아이엔씨. 분자 센서들을 위한 효소 회로들
EP4023764A3 (fr) 2017-05-09 2022-09-21 Roswell Biotechnologies, Inc. Circuits de sonde de liaison pour capteurs moléculaires
WO2019046589A1 (fr) 2017-08-30 2019-03-07 Roswell Biotechnologies, Inc. Capteurs électroniques moléculaires à enzyme processive pour le stockage de données d'adn
WO2019075100A1 (fr) 2017-10-10 2019-04-18 Roswell Biotechnologies, Inc. Procédés, appareil et systèmes pour le stockage de données d'adn sans amplification
WO2020198530A1 (fr) * 2019-03-26 2020-10-01 Roswell Biotechnologies, Inc. Structures d'électrodes à nanopiliers et à nanoespaces accordables et leurs procédés

Family Cites Families (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346478A (en) 1980-12-01 1982-08-24 Siemens Corporation Fiber optical sensor system, preferably for measuring physical parameters
FR2598574B1 (fr) 1986-05-06 1992-02-28 Matra Procede et dispositif optiques de transmission de donnees a multiplexage de frequence
US4825081A (en) 1987-12-01 1989-04-25 General Electric Company Light-activated series-connected pin diode switch
US5225374A (en) 1988-05-13 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Method of fabricating a receptor-based sensor
US4963729A (en) 1989-03-03 1990-10-16 Simmonds Precision Products, Inc. Optically powered sensor system with improved signal conditioning
US5090254A (en) 1990-04-11 1992-02-25 Wisconsin Alumni Research Foundation Polysilicon resonating beam transducers
JP3144928B2 (ja) 1991-12-19 2001-03-12 株式会社東芝 光センサ
JPH05243588A (ja) 1992-02-26 1993-09-21 Asahi Glass Co Ltd 光素子モジュールおよびそれを用いたセンサー
KR0176631B1 (ko) 1994-07-13 1999-05-01 김광호 자동 미세 조정회로
US6262513B1 (en) 1995-06-30 2001-07-17 Kabushiki Kaisha Toshiba Electronic component and method of production thereof
US6130098A (en) 1995-09-15 2000-10-10 The Regents Of The University Of Michigan Moving microdroplets
US5784541A (en) 1996-01-18 1998-07-21 Ruff; John D. System for controlling multiple controllable devices according to a script transmitted from a personal computer
US6402689B1 (en) 1998-09-30 2002-06-11 Sicel Technologies, Inc. Methods, systems, and associated implantable devices for dynamic monitoring of physiological and biological properties of tumors
EP1024348B1 (fr) 1999-01-28 2011-07-27 Denso Corporation Méthode de suppression de bruit à basse fréquence et circuit CMOS
US6437554B1 (en) 1999-11-19 2002-08-20 The United States Of America As Represented By The Secretary Of The Interior High current measurement system incorporating an air-core transducer
JP2001250967A (ja) 2000-03-03 2001-09-14 Canon Inc 光起電力素子及び光起電力素子の製造方法
US20030099273A1 (en) 2001-01-09 2003-05-29 Murry Stefan J. Method and apparatus for coupling a surface-emitting laser to an external device
US6475890B1 (en) 2001-02-12 2002-11-05 Advanced Micro Devices, Inc. Fabrication of a field effect transistor with an upside down T-shaped semiconductor pillar in SOI technology
US6605519B2 (en) 2001-05-02 2003-08-12 Unaxis Usa, Inc. Method for thin film lift-off processes using lateral extended etching masks and device
US20030090161A1 (en) 2001-10-19 2003-05-15 Marlow C. Allen Light communication channel-based electronics power distribution system
DE10155930B4 (de) * 2001-11-14 2020-09-24 Nano Analytik Gmbh Feldeffekttransistor-Sensor
DE10163557B4 (de) * 2001-12-21 2007-12-06 Forschungszentrum Jülich GmbH Transistorbasierter Sensor mit besonders ausgestalteter Gateelektrode zur hochempfindlichen Detektion von Analyten
US7692218B2 (en) * 2002-11-19 2010-04-06 William Marsh Rice University Method for creating a functional interface between a nanoparticle, nanotube or nanowire, and a biological molecule or system
US6836578B2 (en) 2003-04-14 2004-12-28 Lake Shore Cryotronics, Inc. System and method for measuring physical stimuli using vertical cavity surface emitting lasers with integrated tuning means
US6963119B2 (en) 2003-05-30 2005-11-08 International Business Machines Corporation Integrated optical transducer assembly
US7005335B2 (en) 2003-07-15 2006-02-28 Hewlett-Packard Development, L.P. Array of nanoscopic mosfet transistors and fabrication methods
US20080063566A1 (en) 2004-09-03 2008-03-13 Mitsubishi Chemical Corporation Sensor Unit and Reaction Field Cell Unit and Analyzer
US20090059404A1 (en) 2004-12-30 2009-03-05 E.I. Du Pont De Nemours and Company Legal Patent Records Center Electronic device having a mirror stack
JP2006267477A (ja) 2005-03-23 2006-10-05 Fuji Xerox Co Ltd 表示媒体および表示媒体制御装置
JP4419886B2 (ja) 2005-03-23 2010-02-24 富士ゼロックス株式会社 フォトセンサ、被検出物検知装置およびこのフォトセンサが組み込まれた画像形成装置
WO2006134942A1 (fr) * 2005-06-14 2006-12-21 Mitsumi Electric Co., Ltd. Transistor à effet de champ, biocapteur en étant muni, et procédé de détection
US7368370B2 (en) 2005-06-15 2008-05-06 The University Of Connecticut Site-specific nanoparticle self-assembly
EP2260759B1 (fr) 2005-06-17 2015-05-06 F. Hoffmann-La Roche AG Système de capteur, disposition et méthode pour surveiller un composé, en particulier le glucose dans le tissu du corps.
US7400253B2 (en) 2005-08-04 2008-07-15 Mhcmos, Llc Harvesting ambient radio frequency electromagnetic energy for powering wireless electronic devices, sensors and sensor networks and applications thereof
US8031749B2 (en) 2005-09-20 2011-10-04 Jds Uniphase Corporation Passively Q-switched microlaser with controllable peak power density
JP2009524045A (ja) 2006-01-20 2009-06-25 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ バイオセンサ
EP2275022B8 (fr) 2006-01-20 2016-10-19 Olympus Corporation Appareil d'analyse des informations caractéristiques d'un objet grâce à l'utilisation de l'interaction réciproque entre l'onde ultrasonique et la lumière
JP5048752B2 (ja) 2006-03-17 2012-10-17 ザ・ガバメント・オブ・ジ・ユナイテッド・ステイツ・オブ・アメリカ・レプリゼンテッド・バイ・ザ・セクレタリー・ディパートメント・オブ・ヘルス・アンド・ヒューマン・サービシーズ カーボン・ナノチューブ・トランジスタを用いる生物プローブ材料を有するセンサーを結合したマイクロアレイ用の装置
US7923240B2 (en) * 2006-03-31 2011-04-12 Intel Corporation Photo-activated field effect transistor for bioanalyte detection
US8552597B2 (en) 2006-03-31 2013-10-08 Siemens Corporation Passive RF energy harvesting scheme for wireless sensor
US20100248209A1 (en) * 2006-06-30 2010-09-30 Suman Datta Three-dimensional integrated circuit for analyte detection
EP2059271A2 (fr) 2006-08-10 2009-05-20 Medtronic, Inc. Dispositifs avec surfaces photocatalytiques et leurs utilisations
KR100781545B1 (ko) 2006-08-11 2007-12-03 삼성전자주식회사 감도가 향상된 이미지 센서 및 그의 제조방법
US20100194409A1 (en) * 2006-08-16 2010-08-05 Agency For Science, Technology And Research Method of electrically detecting a biological analyte molecule
US8208502B2 (en) 2006-10-03 2012-06-26 California Institute Of Technology Fiber-coupled solid state microcavity light emitters
EP1967581B1 (fr) * 2007-03-08 2016-08-17 Imec Procédé compatible CMOS de fabrication des structures de micro-aiguilles
US7884324B2 (en) * 2007-06-03 2011-02-08 Wisconsin Alumni Research Foundation Nanopillar arrays for electron emission
US20080308870A1 (en) 2007-06-15 2008-12-18 Qimonda Ag Integrated circuit with a split function gate
WO2009039298A2 (fr) * 2007-09-18 2009-03-26 University Of Florida Research Foundation, Inc. Détecteurs utilisant des transistors à mobilité électronique élevée à base d'algan/gan
GB0718721D0 (en) 2007-09-25 2007-11-07 Medical Device Innovations Ltd Surgical resection apparatus
US8355768B2 (en) 2007-12-17 2013-01-15 California Institute Of Technology Micromachined neural probes
WO2009085601A2 (fr) 2007-12-21 2009-07-09 Qualcom Mems Technologies, Inc. Cellules photovoltaïques à jonctions multiples
US7965948B1 (en) 2008-01-04 2011-06-21 Simmonds Precision Products, Inc. Power and data transmitted over a single optical fiber
KR100998645B1 (ko) * 2008-03-03 2010-12-06 한국과학기술연구원 바이오 센서 소자 및 제조 방법
US8682159B2 (en) 2008-07-09 2014-03-25 Tyco Electronics Subsea Communications Llc Optical communication system supporting detection and communication networks
WO2010011612A1 (fr) 2008-07-20 2010-01-28 Cardiomems, Inc. Détecteur de propriété physique à circuit électronique actif et à transmission sans fil d’énergie et de données
US8410568B2 (en) 2008-08-29 2013-04-02 Tau-Metrix, Inc. Integrated photodiode for semiconductor substrates
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
KR100997205B1 (ko) 2008-10-31 2010-11-29 한국과학기술원 바이오 센서 및 그 제조 방법
KR101052290B1 (ko) 2008-12-09 2011-07-27 한국과학기술원 반도체 필라의 제조방법 및 반도체 필라가 구비된 전계효과트랜지스터
US8114787B2 (en) 2009-02-19 2012-02-14 Empire Technology Development Llc Integrated circuit nanowires
US8787752B2 (en) 2009-08-21 2014-07-22 California Institute Of Technology Systems and methods for optically powering transducers and related transducers
US8080839B2 (en) * 2009-08-28 2011-12-20 Samsung Electronics Co. Ltd. Electro-mechanical transistor
US9018684B2 (en) 2009-11-23 2015-04-28 California Institute Of Technology Chemical sensing and/or measuring devices and methods
US20110237000A1 (en) * 2010-03-11 2011-09-29 Agency For Science, Technology And Research Method for detecting an analyte molecule
US20110288391A1 (en) 2010-05-19 2011-11-24 Purdue Research Foundation Titanium-Based Multi-Channel Microelectrode Array for Electrophysiological Recording and Stimulation of Neural Tissue
KR101161371B1 (ko) 2010-08-13 2012-07-02 경북대학교 산학협력단 전계효과 트랜지스터 기반 바이오센서 및 그 제작방법
BR112013018756A2 (pt) 2010-12-29 2016-10-25 Proteus Digital Health Inc fontes de energia sem fio para circuitos integrados
US9518953B2 (en) * 2011-09-07 2016-12-13 Technion Research And Development Foundation Ltd. Ion sensitive detector
US9128124B2 (en) 2012-02-10 2015-09-08 California Institute Of Technology Wireless voltage sensing device
US9031102B2 (en) 2012-03-01 2015-05-12 California Institute Of Technology Methods of modulating microlasers at ultralow power levels, and systems thereof
US9099436B2 (en) 2012-03-29 2015-08-04 California Institute Of Technology Sensor probe for bio-sensing and chemical-sensing applications
CN105408740A (zh) 2012-07-25 2016-03-16 加州理工学院 具有功能化栅电极和基电极的纳米柱场效应和结型晶体管
KR20150070216A (ko) 2012-10-16 2015-06-24 캘리포니아 인스티튜트 오브 테크놀로지 집적된 온-칩 안테나를 통한 무선 트랜스듀서들에 대한 시스템들 및 방법들

Also Published As

Publication number Publication date
JP2015530564A (ja) 2015-10-15
US9966443B2 (en) 2018-05-08
EP2877845A4 (fr) 2016-03-30
US20140030819A1 (en) 2014-01-30
US20150279948A1 (en) 2015-10-01
US9070733B2 (en) 2015-06-30
WO2014018286A1 (fr) 2014-01-30
US20150279949A1 (en) 2015-10-01
CN105408740A (zh) 2016-03-16
EP2877845A1 (fr) 2015-06-03
US9960238B2 (en) 2018-05-01

Similar Documents

Publication Publication Date Title
HK1210524A1 (en) Nanopillar field-effect and junction transistors with functionalized gate and base electrodes
EP2911188A4 (fr) Transistor à effet de champ et dispositif à semi-conducteur
ZA201706241B (en) Anti-cxcr4 antibodies and antibody-drug conjugates
HK1217956A1 (zh) 新的抗體綴合物及其用途
HK1219658A1 (zh) 吡咯並苯並二氮雜卓及其結合物
GB2523930B (en) Patterning of vertical nanowire transistor channel and gate with directed self assembly
GB2506558B (en) Tunnel field-effect transistor
HK1208038A1 (en) Anti-lgr5 antibodies and immunoconjugates lgr5
GB2541602B (en) Vertical nanowire transistor with axially engineered semiconductor and gate metallization
HK1202993A1 (en) Field-effect transistor stack voltage compensation
GB2506314B (en) Insulated gate bipolar transistor
GB201317982D0 (en) Pyrrolobenzodiazepines and conjugates thereof
GB201317981D0 (en) Pyrrolobenzodiazepines and conjugates thereof
SG11201600543YA (en) Field-effect transistor and method for producing field-effect transistor
EP2926376A4 (fr) Transistor à effet de champ vertical ambipolaire
GB2506075B (en) Insulated gate bipolar transistor
EP2646812A4 (fr) Biocapteur à transistor à effet de champ à nanofil ayant une sensibilité améliorée
GB201404349D0 (en) Organic semiconductor composition and organic transistor
EP2894685A4 (fr) Dérivé du benzothiénobenzothiophène, matériau semi-conducteur organique et transistor organique
EP2975649A4 (fr) Transistor à effet de champ
EP2860762A4 (fr) Transistor à effet de champ à jonction pour haute tension
EP2801105A4 (fr) Transistors nanofils à effet de champ
GB2511541B (en) Field effect transistor device
GB2498253B (en) Nanowire floating gate transistor
GB201514440D0 (en) Organic semiconducting blend