HK1207474A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
HK1207474A1
HK1207474A1 HK15108095.0A HK15108095A HK1207474A1 HK 1207474 A1 HK1207474 A1 HK 1207474A1 HK 15108095 A HK15108095 A HK 15108095A HK 1207474 A1 HK1207474 A1 HK 1207474A1
Authority
HK
Hong Kong
Prior art keywords
wiring
drain
source
gate
region
Prior art date
Application number
HK15108095.0A
Other languages
English (en)
Chinese (zh)
Inventor
松井孝二郎
阪本雄彥
阪本雄彦
梅津和之
宇野友彰
Original Assignee
瑞萨电子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞萨电子株式会社 filed Critical 瑞萨电子株式会社
Publication of HK1207474A1 publication Critical patent/HK1207474A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/835—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising LDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4405—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
HK15108095.0A 2013-11-20 2015-08-20 Semiconductor device HK1207474A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013240286A JP6295065B2 (ja) 2013-11-20 2013-11-20 半導体装置
JP2013-240286 2013-11-20

Publications (1)

Publication Number Publication Date
HK1207474A1 true HK1207474A1 (en) 2016-01-29

Family

ID=52662772

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15108095.0A HK1207474A1 (en) 2013-11-20 2015-08-20 Semiconductor device

Country Status (4)

Country Link
US (3) US9318434B2 (https=)
JP (1) JP6295065B2 (https=)
CN (2) CN204204847U (https=)
HK (1) HK1207474A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12040238B2 (en) * 2013-11-12 2024-07-16 Skyworks Solutions, Inc. Radio-frequency switching devices having improved voltage handling capability
US9837324B2 (en) 2013-11-12 2017-12-05 Skyworks Solutions, Inc. Devices and methods related to radio-frequency switches having improved on-resistance performance
CN105514102A (zh) * 2014-10-17 2016-04-20 中芯国际集成电路制造(上海)有限公司 一种版图结构、半导体器件和电子装置
JP6653541B2 (ja) * 2015-09-14 2020-02-26 ローム株式会社 半導体装置
US11049967B2 (en) * 2018-11-02 2021-06-29 Texas Instruments Incorporated DMOS transistor having thick gate oxide and STI and method of fabricating
US10903834B1 (en) * 2020-04-08 2021-01-26 Bae Systems Controls Inc. Power electronic device with paralleled transistors
TWI733454B (zh) * 2020-05-18 2021-07-11 矽品精密工業股份有限公司 電子裝置、電子封裝件及其封裝基板
US20230230981A1 (en) * 2022-01-18 2023-07-20 Changxin Memory Technologies, Inc, Semiconductor structure and manufacturing method thereof
JP2024133954A (ja) * 2023-03-20 2024-10-03 ローム株式会社 スイッチ装置、およびハードディスク装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150722A (en) 1994-11-02 2000-11-21 Texas Instruments Incorporated Ldmos transistor with thick copper interconnect
US6278264B1 (en) 2000-02-04 2001-08-21 Volterra Semiconductor Corporation Flip-chip switching regulator
US6713823B1 (en) 2002-03-08 2004-03-30 Volterra Semiconductor Corporation Conductive routings in integrated circuits
JP2004022694A (ja) * 2002-06-14 2004-01-22 Renesas Technology Corp 半導体装置の製造方法
US6972464B2 (en) 2002-10-08 2005-12-06 Great Wall Semiconductor Corporation Power MOSFET
JP4696532B2 (ja) * 2004-05-20 2011-06-08 株式会社デンソー パワー複合集積型半導体装置およびその製造方法
JP4372046B2 (ja) * 2005-05-18 2009-11-25 株式会社東芝 半導体装置
JP2007173731A (ja) * 2005-12-26 2007-07-05 Mitsumi Electric Co Ltd 半導体装置
US8385047B2 (en) * 2006-03-31 2013-02-26 University Of Florida Research Foundation, Inc. Integrated power passives
CN100559576C (zh) * 2006-10-24 2009-11-11 株式会社电装 半导体器件
JP2009260215A (ja) * 2008-03-25 2009-11-05 Toshiba Corp 半導体装置
JP5297104B2 (ja) 2008-07-01 2013-09-25 ルネサスエレクトロニクス株式会社 半導体装置
JP2010177478A (ja) * 2009-01-30 2010-08-12 Hitachi Ulsi Systems Co Ltd 半導体装置
JP5607994B2 (ja) * 2010-06-15 2014-10-15 ルネサスエレクトロニクス株式会社 半導体集積回路装置およびその製造方法
JP2012084743A (ja) * 2010-10-13 2012-04-26 Fujitsu Semiconductor Ltd 半導体装置及び電源装置
JP5794855B2 (ja) * 2011-08-05 2015-10-14 トランスフォーム・ジャパン株式会社 電源装置の駆動回路及び電源装置
US8674415B2 (en) * 2012-01-20 2014-03-18 Samsung Electro-Mechanics Co., Ltd. High frequency semiconductor switch
WO2013161138A1 (ja) * 2012-04-26 2013-10-31 パナソニック株式会社 半導体装置および電力変換装置

Also Published As

Publication number Publication date
US10068849B2 (en) 2018-09-04
US10396029B2 (en) 2019-08-27
CN204204847U (zh) 2015-03-11
JP2015099893A (ja) 2015-05-28
US20160204252A1 (en) 2016-07-14
CN104659016A (zh) 2015-05-27
US9318434B2 (en) 2016-04-19
CN104659016B (zh) 2019-10-08
US20180294220A1 (en) 2018-10-11
US20150137260A1 (en) 2015-05-21
JP6295065B2 (ja) 2018-03-14

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