HK1207224A1 - 具有光子計數器的低功率成像系統及操作像素陣列的方法 - Google Patents

具有光子計數器的低功率成像系統及操作像素陣列的方法

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Publication number
HK1207224A1
HK1207224A1 HK15107590.2A HK15107590A HK1207224A1 HK 1207224 A1 HK1207224 A1 HK 1207224A1 HK 15107590 A HK15107590 A HK 15107590A HK 1207224 A1 HK1207224 A1 HK 1207224A1
Authority
HK
Hong Kong
Prior art keywords
imaging system
low power
pixel array
photon counters
power imaging
Prior art date
Application number
HK15107590.2A
Other languages
English (en)
Inventor
代鐵軍
王睿
Original Assignee
Omnivision Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omnivision Tech Inc filed Critical Omnivision Tech Inc
Publication of HK1207224A1 publication Critical patent/HK1207224A1/zh

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
HK15107590.2A 2013-12-09 2015-08-06 具有光子計數器的低功率成像系統及操作像素陣列的方法 HK1207224A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/100,941 US9210350B2 (en) 2013-12-09 2013-12-09 Low power imaging system with single photon avalanche diode photon counters and ghost image reduction

Publications (1)

Publication Number Publication Date
HK1207224A1 true HK1207224A1 (zh) 2016-01-22

Family

ID=53272418

Family Applications (1)

Application Number Title Priority Date Filing Date
HK15107590.2A HK1207224A1 (zh) 2013-12-09 2015-08-06 具有光子計數器的低功率成像系統及操作像素陣列的方法

Country Status (4)

Country Link
US (1) US9210350B2 (zh)
CN (1) CN104702861B (zh)
HK (1) HK1207224A1 (zh)
TW (1) TWI541985B (zh)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9819144B2 (en) 2015-05-14 2017-11-14 Apple Inc. High-efficiency vertical emitters with improved heat sinking
US10034375B2 (en) 2015-05-21 2018-07-24 Apple Inc. Circuit substrate with embedded heat sink
US9735539B2 (en) 2015-07-20 2017-08-15 Apple Inc. VCSEL structure with embedded heat sink
US10620300B2 (en) 2015-08-20 2020-04-14 Apple Inc. SPAD array with gated histogram construction
CN105100654B (zh) * 2015-09-18 2018-02-23 中国科学院高能物理研究所 一种像素单元电路及像素读出芯片
KR101712288B1 (ko) * 2015-11-12 2017-03-03 앰코 테크놀로지 코리아 주식회사 반도체 패키지 및 그 제조 방법
CN105450948B (zh) * 2015-12-15 2018-06-26 中国科学院西安光学精密机械研究所 一种电子轰击固态光电倍增管式微光数字图像传感器
US9997551B2 (en) 2015-12-20 2018-06-12 Apple Inc. Spad array with pixel-level bias control
US10324171B2 (en) 2015-12-20 2019-06-18 Apple Inc. Light detection and ranging sensor
CN105634619A (zh) * 2016-01-25 2016-06-01 中国人民解放军信息工程大学 一种水下通信的接收端设备及系统
CN105929437B (zh) * 2016-06-18 2018-12-04 武汉京邦科技有限公司 一种硅光电倍增器的片上读出系统
JP2018191230A (ja) * 2017-05-11 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子及びその駆動方法、並びに、電子機器
EP3646057A1 (en) 2017-06-29 2020-05-06 Apple Inc. Time-of-flight depth mapping with parallax compensation
CN107449516B (zh) * 2017-07-06 2019-07-23 东南大学 一种自适应探测模式的光子计数线阵读出电路及方法
US10677899B2 (en) 2017-08-07 2020-06-09 Waymo Llc Aggregating non-imaging SPAD architecture for full digital monolithic, frame averaging receivers
CN107422392B (zh) * 2017-08-08 2019-03-08 中国科学院西安光学精密机械研究所 一种基于单光子探测的绕角定位与追踪系统及方法
WO2019046581A1 (en) * 2017-08-30 2019-03-07 Massachusetts Institute Of Technology BIMODAL IMAGING RECEIVER
US10955552B2 (en) 2017-09-27 2021-03-23 Apple Inc. Waveform design for a LiDAR system with closely-spaced pulses
JP7132799B2 (ja) * 2017-12-07 2022-09-07 キヤノン株式会社 撮像素子、撮像装置及び撮像方法
JP7062430B2 (ja) 2017-12-15 2022-05-06 キヤノン株式会社 撮像素子、撮像装置および画像処理方法
KR102403544B1 (ko) 2017-12-18 2022-05-30 애플 인크. 방출기들의 어드레스가능 어레이를 사용하는 비행 시간 감지
US11622086B2 (en) * 2018-02-02 2023-04-04 Sony Semiconductor Solutions Corporation Solid-state image sensor, imaging device, and method of controlling solid-state image sensor
WO2019150785A1 (ja) * 2018-02-02 2019-08-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
US10616512B2 (en) 2018-07-27 2020-04-07 Wisconsin Alumni Research Foundation Systems, methods, and media for high dynamic range imaging using dead-time-limited single photon detectors
CN112585953B (zh) * 2018-09-06 2024-05-14 松下知识产权经营株式会社 固体摄像元件、摄像系统、固体摄像元件的驱动方法及光检测器
CN108871596B (zh) * 2018-09-10 2023-09-15 湖北京邦科技有限公司 成像装置和包括该成像装置的成像系统
CN113272684A (zh) * 2019-01-04 2021-08-17 感觉光子公司 具有信号相关有效读出率的高动态范围直接飞行时间传感器
US10955234B2 (en) 2019-02-11 2021-03-23 Apple Inc. Calibration of depth sensing using a sparse array of pulsed beams
CN113424027B (zh) * 2019-03-07 2024-04-12 索尼半导体解决方案公司 光接收装置
US11500094B2 (en) 2019-06-10 2022-11-15 Apple Inc. Selection of pulse repetition intervals for sensing time of flight
US10881028B1 (en) 2019-07-03 2020-12-29 Apple Inc. Efficient heat removal from electronic modules
US11555900B1 (en) 2019-07-17 2023-01-17 Apple Inc. LiDAR system with enhanced area coverage
JP7379000B2 (ja) 2019-07-29 2023-11-14 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
WO2021018403A1 (en) 2019-08-01 2021-02-04 Ecole Polytechnique Federale De Lausanne (Epfl) Low-power image sensor system with single-photon avalanche diode photodetectors
CN110632639A (zh) * 2019-09-18 2019-12-31 北京格物时代科技发展有限公司 探头、探测器及多像素光子计数器总计数修正方法
CN110943714B (zh) * 2019-11-21 2023-03-31 电子科技大学 带时钟门控的数据读出接口电路
US11733359B2 (en) 2019-12-03 2023-08-22 Apple Inc. Configurable array of single-photon detectors
US11710945B2 (en) 2020-05-25 2023-07-25 Apple Inc. Projection of patterned and flood illumination
US11699715B1 (en) 2020-09-06 2023-07-11 Apple Inc. Flip-chip mounting of optoelectronic chips
EP3989535A1 (en) 2020-10-20 2022-04-27 Canon Kabushiki Kaisha Photoelectric conversion device, method of controlling photoelectric conversion device, and information processing apparatus
CN112558097A (zh) * 2020-11-23 2021-03-26 Oppo（重庆）智能科技有限公司 电子装置、电子装置的控制方法、及计算机可读存储介质
US11563908B2 (en) * 2021-02-22 2023-01-24 Microsoft Technology Licensing, Llc Image acquisition techniques with reduced noise using single photon avalanche diodes
CN113538217B (zh) * 2021-06-21 2022-09-16 天津大学 应用于单比特量子图像传感器的最佳阈值图像重构方法
JP2023004679A (ja) * 2021-06-28 2023-01-17 キヤノン株式会社 撮像装置
US11681028B2 (en) 2021-07-18 2023-06-20 Apple Inc. Close-range measurement of time of flight using parallax shift
JP2023028992A (ja) 2021-08-20 2023-03-03 キヤノン株式会社 撮像装置およびその制御方法
JP2023032283A (ja) 2021-08-26 2023-03-09 キヤノン株式会社 光電変換装置、撮像装置、制御方法、及びコンピュータプログラム
JP2023032298A (ja) 2021-08-26 2023-03-09 キヤノン株式会社 光電変換装置、撮像装置、制御方法、及びコンピュータプログラム
JP2023046031A (ja) * 2021-09-22 2023-04-03 キヤノン株式会社 撮像装置
US11539895B1 (en) * 2021-09-27 2022-12-27 Wisconsin Alumni Research Foundation Systems, methods, and media for motion adaptive imaging using single-photon image sensor data
US12010443B2 (en) * 2021-10-19 2024-06-11 Microsoft Technology Licensing, Llc Systems and methods for selectively modifying gating rate in single photon avalanche diodes
KR20230061032A (ko) * 2021-10-28 2023-05-08 삼성전자주식회사 이미지 센서, 영상 획득 장치 및 이를 포함하는 전자 장치
JP2023073867A (ja) * 2021-11-16 2023-05-26 キヤノン株式会社 撮像センサ、撮像装置および撮像方法
JP2023081558A (ja) * 2021-12-01 2023-06-13 キヤノン株式会社 撮像センサ及び撮像センサの制御方法
JP2023099398A (ja) * 2022-01-01 2023-07-13 キヤノン株式会社 光電変換装置、撮像システム、光検出システム、および移動体
JP2023118323A (ja) * 2022-02-15 2023-08-25 キヤノン株式会社 固体撮像素子、固体撮像素子の制御方法、プログラム、記憶媒体、及び撮像装置
WO2024078721A1 (en) 2022-10-13 2024-04-18 Ecole Polytechnique Federale De Lausanne (Epfl) Imaging sensor device using an array of single-photon avalanche diode photodetectors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4748311B2 (ja) * 2005-10-31 2011-08-17 日本電気株式会社 微弱光の光パワー測定方法および装置、それを用いた光通信システム
KR101616056B1 (ko) * 2009-08-19 2016-04-28 삼성전자주식회사 광자 계수 장치 및 방법
TWI441512B (zh) * 2009-10-01 2014-06-11 Sony Corp 影像取得裝置及照相機系統

Also Published As

Publication number Publication date
US9210350B2 (en) 2015-12-08
CN104702861B (zh) 2018-02-09
TW201523843A (zh) 2015-06-16
US20150163429A1 (en) 2015-06-11
CN104702861A (zh) 2015-06-10
TWI541985B (zh) 2016-07-11

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