HK120097A - Deep UV sensitive photoresist resistant to latent image decay - Google Patents
Deep UV sensitive photoresist resistant to latent image decayInfo
- Publication number
- HK120097A HK120097A HK120097A HK120097A HK120097A HK 120097 A HK120097 A HK 120097A HK 120097 A HK120097 A HK 120097A HK 120097 A HK120097 A HK 120097A HK 120097 A HK120097 A HK 120097A
- Authority
- HK
- Hong Kong
- Prior art keywords
- nitro
- lower alkyl
- ester
- deep
- latent image
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/04—Chromates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/026,934 US5314782A (en) | 1993-03-05 | 1993-03-05 | Deep UV sensitive resistant to latent image decay comprising a diazonaphthoquinone sulfonate of a nitrobenzyl derivative |
Publications (1)
Publication Number | Publication Date |
---|---|
HK120097A true HK120097A (en) | 1997-09-05 |
Family
ID=21834647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK120097A HK120097A (en) | 1993-03-05 | 1997-06-26 | Deep UV sensitive photoresist resistant to latent image decay |
Country Status (9)
Country | Link |
---|---|
US (1) | US5314782A (ja) |
EP (1) | EP0614121B1 (ja) |
JP (1) | JP2698547B2 (ja) |
KR (1) | KR940022194A (ja) |
CN (1) | CN1096595A (ja) |
AT (1) | ATE141020T1 (ja) |
CA (1) | CA2111633A1 (ja) |
DE (1) | DE69400344T2 (ja) |
HK (1) | HK120097A (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960015081A (ko) * | 1993-07-15 | 1996-05-22 | 마쯔모또 에이이찌 | 화학증폭형 레지스트 조성물 |
WO1996008750A1 (de) * | 1994-09-12 | 1996-03-21 | Siemens Aktiengesellschaft | Photolithographische strukturerzeugung |
US5863705A (en) * | 1994-09-12 | 1999-01-26 | Siemens Aktiengesellschaft | Photolithographic pattern generation |
US5619663A (en) * | 1994-09-16 | 1997-04-08 | Philips Electronics North America Corp. | Computer instruction prefetch system |
JP3422580B2 (ja) * | 1994-12-16 | 2003-06-30 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5719004A (en) * | 1996-08-07 | 1998-02-17 | Clariant Finance (Bvi) Limited | Positive photoresist composition containing a 2,4-dinitro-1-naphthol |
US5763135A (en) * | 1996-09-30 | 1998-06-09 | Clariant Finance (Bvi) Limited | Light sensitive composition containing an arylhydrazo dye |
TW546540B (en) * | 1997-04-30 | 2003-08-11 | Wako Pure Chem Ind Ltd | An agent for reducing the substrate dependence of resist and a resist composition |
US6492086B1 (en) * | 1999-10-08 | 2002-12-10 | Shipley Company, L.L.C. | Phenolic/alicyclic copolymers and photoresists |
US7160665B2 (en) * | 2002-12-30 | 2007-01-09 | International Business Machines Corporation | Method for employing vertical acid transport for lithographic imaging applications |
CN100365509C (zh) * | 2003-08-22 | 2008-01-30 | 奇美实业股份有限公司 | 正型感光性树脂组成物 |
JP3977307B2 (ja) * | 2003-09-18 | 2007-09-19 | 東京応化工業株式会社 | ポジ型フォトレジスト組成物及びレジストパターン形成方法 |
US20050162122A1 (en) * | 2004-01-22 | 2005-07-28 | Dunn Glenn M. | Fuel cell power and management system, and technique for controlling and/or operating same |
US7235344B2 (en) * | 2004-06-30 | 2007-06-26 | Intel Corporation | Energy harvesting molecules and photoresist technology |
JP5137410B2 (ja) * | 2006-06-09 | 2013-02-06 | キヤノン株式会社 | 感光性化合物、感光性組成物、レジストパターンの形成方法及び基板の加工方法 |
CN101813887B (zh) * | 2010-04-12 | 2012-05-09 | 东莞长联新材料科技有限公司 | 一种提高重氮感光胶热稳定性的方法 |
CN102156385B (zh) * | 2011-05-19 | 2012-10-10 | 北京师范大学 | 含2,1,4-重氮萘醌磺酸酚酯的化学增幅型i-线正性光致抗蚀剂组合物 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE217211C (ja) * | ||||
US3046121A (en) * | 1949-07-23 | 1962-07-24 | Azoplate Corp | Process for the manufacture of printing plates and light-sensitive material suttablefor use therein |
NL95407C (ja) * | 1954-08-20 | |||
GB1116737A (en) * | 1966-02-28 | 1968-06-12 | Agfa Gevaert Nv | Bis-(o-quinone diazide) modified bisphenols |
US3779778A (en) * | 1972-02-09 | 1973-12-18 | Minnesota Mining & Mfg | Photosolubilizable compositions and elements |
US3915706A (en) * | 1974-03-11 | 1975-10-28 | Xerox Corp | Imaging system based on photodegradable polyaldehydes |
US4273668A (en) * | 1977-09-14 | 1981-06-16 | General Electric Company | Arylsulfonium salt-solvent mixtures |
JPS5562444A (en) * | 1978-11-02 | 1980-05-10 | Konishiroku Photo Ind Co Ltd | Photosensitive composition |
DE2928636A1 (de) * | 1979-07-16 | 1981-02-12 | Hoechst Ag | Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern |
EP0054258B1 (en) * | 1980-12-17 | 1986-03-05 | Konica Corporation | Photosensitive compositions |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
DE3406927A1 (de) * | 1984-02-25 | 1985-08-29 | Hoechst Ag, 6230 Frankfurt | Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen |
EP0155231B2 (de) * | 1984-03-07 | 1997-01-15 | Ciba-Geigy Ag | Verfahren zur Herstellung von Abbildungen |
DE3730785A1 (de) * | 1987-09-13 | 1989-03-23 | Hoechst Ag | Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
JP2623309B2 (ja) * | 1988-02-22 | 1997-06-25 | ユーシービー ソシエテ アノニム | レジストパターンを得る方法 |
DE3817009A1 (de) * | 1988-05-19 | 1989-11-30 | Basf Ag | Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern |
DE3820699A1 (de) * | 1988-06-18 | 1989-12-21 | Hoechst Ag | Strahlungsempfindliches gemisch und hieraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
US5178986A (en) * | 1988-10-17 | 1993-01-12 | Shipley Company Inc. | Positive photoresist composition with naphthoquinonediazidesulfonate of oligomeric phenol |
US5151340A (en) * | 1990-07-02 | 1992-09-29 | Ocg Microelectronic Materials, Inc. | Selected photoactive methylolated cyclohexanol compounds and their use in radiation-sensitive mixtures |
US5308744A (en) * | 1993-03-05 | 1994-05-03 | Morton International, Inc. | Source of photochemically generated acids from diazonaphthoquinone sulfonates of nitrobenzyl derivatives |
-
1993
- 1993-03-05 US US08/026,934 patent/US5314782A/en not_active Expired - Fee Related
- 1993-12-16 CA CA002111633A patent/CA2111633A1/en not_active Abandoned
-
1994
- 1994-01-06 DE DE69400344T patent/DE69400344T2/de not_active Expired - Fee Related
- 1994-01-06 AT AT94300059T patent/ATE141020T1/de not_active IP Right Cessation
- 1994-01-06 EP EP94300059A patent/EP0614121B1/en not_active Expired - Lifetime
- 1994-02-07 KR KR1019940002203A patent/KR940022194A/ko not_active Application Discontinuation
- 1994-03-04 CN CN94102363A patent/CN1096595A/zh active Pending
- 1994-03-04 JP JP6034687A patent/JP2698547B2/ja not_active Expired - Lifetime
-
1997
- 1997-06-26 HK HK120097A patent/HK120097A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA2111633A1 (en) | 1994-09-06 |
JP2698547B2 (ja) | 1998-01-19 |
EP0614121B1 (en) | 1996-07-31 |
CN1096595A (zh) | 1994-12-21 |
JPH06301201A (ja) | 1994-10-28 |
US5314782A (en) | 1994-05-24 |
KR940022194A (ko) | 1994-10-20 |
ATE141020T1 (de) | 1996-08-15 |
DE69400344T2 (de) | 1997-01-16 |
EP0614121A1 (en) | 1994-09-07 |
DE69400344D1 (de) | 1996-09-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |