HK1151072A1 - An hvpe reactor arrangement hvpe - Google Patents

An hvpe reactor arrangement hvpe

Info

Publication number
HK1151072A1
HK1151072A1 HK11105119.2A HK11105119A HK1151072A1 HK 1151072 A1 HK1151072 A1 HK 1151072A1 HK 11105119 A HK11105119 A HK 11105119A HK 1151072 A1 HK1151072 A1 HK 1151072A1
Authority
HK
Hong Kong
Prior art keywords
hvpe
reactor arrangement
arrangement
reactor
hvpe reactor
Prior art date
Application number
HK11105119.2A
Other languages
English (en)
Inventor
Vladimir Nikolaev
Vladislav E Bougrov
Maxim A Odnoblyudov
Arthur Cherenkov
Original Assignee
Optogan Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optogan Oy filed Critical Optogan Oy
Publication of HK1151072A1 publication Critical patent/HK1151072A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04C—ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
    • F04C19/00—Rotary-piston pumps with fluid ring or the like, specially adapted for elastic fluids
    • F04C19/004—Details concerning the operating liquid, e.g. nature, separation, cooling, cleaning, control of the supply
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04C—ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
    • F04C29/00—Component parts, details or accessories of pumps or pumping installations, not provided for in groups F04C18/00 - F04C28/00
    • F04C29/0092—Removing solid or liquid contaminants from the gas under pumping, e.g. by filtering or deposition; Purging; Scrubbing; Cleaning
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04C—ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
    • F04C2280/00—Arrangements for preventing or removing deposits or corrosion
    • F04C2280/02—Preventing solid deposits in pumps, e.g. in vacuum pumps with chemical vapour deposition [CVD] processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
HK11105119.2A 2007-12-13 2011-05-23 An hvpe reactor arrangement hvpe HK1151072A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20075902A FI120544B (fi) 2007-12-13 2007-12-13 HVPE-reaktorijärjestely
PCT/FI2008/050728 WO2009074720A1 (en) 2007-12-13 2008-12-11 An hvpe reactor arrangement

Publications (1)

Publication Number Publication Date
HK1151072A1 true HK1151072A1 (en) 2012-01-20

Family

ID=38951597

Family Applications (1)

Application Number Title Priority Date Filing Date
HK11105119.2A HK1151072A1 (en) 2007-12-13 2011-05-23 An hvpe reactor arrangement hvpe

Country Status (10)

Country Link
US (1) US20100275843A1 (xx)
EP (1) EP2231897A4 (xx)
JP (1) JP2011506765A (xx)
KR (1) KR20100100910A (xx)
CN (1) CN101896639B (xx)
FI (1) FI120544B (xx)
HK (1) HK1151072A1 (xx)
RU (1) RU2484177C2 (xx)
TW (1) TW200937500A (xx)
WO (1) WO2009074720A1 (xx)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102383106B (zh) * 2010-09-03 2013-12-25 甘志银 快速清除残余反应气体的金属有机物化学气相沉积反应腔体
CN106367733B (zh) * 2015-07-24 2019-02-22 东莞市中镓半导体科技有限公司 一种清除hvpe设备管道尾气沉积物的装置及方法
CN113186511B (zh) * 2020-12-06 2022-12-13 无锡英诺赛思科技有限公司 一种可量产氮化镓的全立式hpve设备
CN113521953B (zh) * 2021-07-21 2023-06-02 苏州纳维科技有限公司 尾气中镓源回收装置、尾气处理装置及hvpe反应器

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1092208A1 (ru) * 1982-04-16 1984-05-15 Предприятие П/Я В-8061 Устройство дл нанесени покрытий из паровой (газовой) фазы
JPH05154334A (ja) * 1991-12-11 1993-06-22 Fujitsu Ltd 半導体製造装置の排気ポンプシステム
JP3013652B2 (ja) * 1993-06-01 2000-02-28 富士通株式会社 排気装置とその清浄化方法
JPH08296800A (ja) * 1994-12-30 1996-11-12 L'air Liquide 腐蝕を最少に止める超高純度ガスの分配方法
JPH10195659A (ja) * 1996-11-14 1998-07-28 Toshiba Corp 薄膜の製造方法及び製造装置
JP2922181B1 (ja) * 1998-01-26 1999-07-19 株式会社宇野澤組鐵工所 粉体捕集機能を有する真空ポンプ装置
US20070119816A1 (en) * 1998-04-16 2007-05-31 Urquhart Karl J Systems and methods for reclaiming process fluids in a processing environment
US6290774B1 (en) * 1999-05-07 2001-09-18 Cbl Technology, Inc. Sequential hydride vapor phase epitaxy
US6221164B1 (en) * 2000-01-25 2001-04-24 Advanced Micro Devices, Inc. Method of in-situ cleaning for LPCVD teos pump
JP2002217118A (ja) * 2001-01-22 2002-08-02 Japan Pionics Co Ltd 窒化ガリウム膜半導体の製造装置、排ガス浄化装置、及び製造設備
US6806144B2 (en) * 2002-08-13 2004-10-19 Taiwan Semiconductor Manufacturing Co., Ltd Method and apparatus for improved gate oxide uniformity with reducing system contaminants
EP1552152B1 (en) * 2002-10-14 2013-03-20 Edwards Limited Rotary piston vacuum pump with washing installation
JP4417056B2 (ja) * 2003-08-28 2010-02-17 株式会社荏原製作所 結晶の回収及び移送装置
WO2005028871A1 (en) * 2003-09-23 2005-03-31 The Boc Group Plc Cleaning method of a rotary piston vacuum pump
DE102004063058A1 (de) * 2004-12-22 2006-07-13 Leybold Vacuum Gmbh Verfahren zum Reinigen einer Vakuum-Schraubenpumpe
GB0525136D0 (en) * 2005-12-09 2006-01-18 Boc Group Plc Method of inhibiting a deflagration in a vacuum pump
KR101213689B1 (ko) * 2006-06-12 2012-12-18 주식회사 테라텍 반도체 및 ｌｃｄ 제조장치의 공정 반응 챔버의 배기부 및진공펌프의 세정장치

Also Published As

Publication number Publication date
FI20075902A0 (fi) 2007-12-13
FI120544B (fi) 2009-11-30
CN101896639B (zh) 2012-04-18
EP2231897A4 (en) 2012-12-05
FI20075902A (fi) 2009-06-14
RU2484177C2 (ru) 2013-06-10
US20100275843A1 (en) 2010-11-04
WO2009074720A1 (en) 2009-06-18
KR20100100910A (ko) 2010-09-15
JP2011506765A (ja) 2011-03-03
CN101896639A (zh) 2010-11-24
TW200937500A (en) 2009-09-01
EP2231897A1 (en) 2010-09-29
RU2010128094A (ru) 2012-01-20

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20161211