HK1150901A1 - 半導體元件及其製造方法 - Google Patents
半導體元件及其製造方法Info
- Publication number
- HK1150901A1 HK1150901A1 HK11104948.2A HK11104948A HK1150901A1 HK 1150901 A1 HK1150901 A1 HK 1150901A1 HK 11104948 A HK11104948 A HK 11104948A HK 1150901 A1 HK1150901 A1 HK 1150901A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- manufacture
- semiconductor component
- semiconductor
- component
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/359,445 US7943465B2 (en) | 2009-01-26 | 2009-01-26 | Method for manufacturing a semiconductor component |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1150901A1 true HK1150901A1 (zh) | 2012-01-13 |
Family
ID=42353515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK11104948.2A HK1150901A1 (zh) | 2009-01-26 | 2011-05-19 | 半導體元件及其製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7943465B2 (zh) |
CN (1) | CN101901751B (zh) |
HK (1) | HK1150901A1 (zh) |
TW (1) | TWI485807B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104051416B (zh) * | 2013-03-15 | 2018-04-13 | 半导体元件工业有限责任公司 | 包括垂直导电区域的电子设备及其形成工艺 |
US9466698B2 (en) * | 2013-03-15 | 2016-10-11 | Semiconductor Components Industries, Llc | Electronic device including vertical conductive regions and a process of forming the same |
CN104900614B (zh) * | 2014-03-05 | 2017-12-01 | 旺宏电子股份有限公司 | 半导体结构及其制造方法 |
US9991363B1 (en) * | 2017-07-24 | 2018-06-05 | Globalfoundries Inc. | Contact etch stop layer with sacrificial polysilicon layer |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1110065C (zh) * | 2000-04-05 | 2003-05-28 | 信息产业部电子第十三研究所 | 半导体器件栅帽与栅足自对准的t形栅加工方法 |
JP4797265B2 (ja) * | 2001-03-21 | 2011-10-19 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP4851697B2 (ja) * | 2003-09-15 | 2012-01-11 | 三星電子株式会社 | 自己整列されたono構造を有する局部窒化膜sonos素子及びその製造方法 |
US7320934B2 (en) * | 2005-06-20 | 2008-01-22 | Infineon Technologies Ag | Method of forming a contact in a flash memory device |
US7799640B2 (en) * | 2006-09-28 | 2010-09-21 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device having trench charge compensation regions |
TW200820419A (en) * | 2006-10-19 | 2008-05-01 | Semiconductor Components Ind | Semiconductor device having deep trench charge compensation regions and method |
US20080099852A1 (en) * | 2006-10-31 | 2008-05-01 | Juergen Faul | Integrated semiconductor device and method of manufacturing an integrated semiconductor device |
KR100851916B1 (ko) * | 2007-03-31 | 2008-08-12 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자의 제조방법 |
US8138033B2 (en) * | 2007-05-09 | 2012-03-20 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
TWI375300B (en) * | 2008-07-22 | 2012-10-21 | Nanya Technology Corp | Dynamic random access memory structure and method of making the same |
-
2009
- 2009-01-26 US US12/359,445 patent/US7943465B2/en active Active
- 2009-11-26 TW TW098140379A patent/TWI485807B/zh active
- 2009-11-27 CN CN200910246375.5A patent/CN101901751B/zh not_active Expired - Fee Related
-
2011
- 2011-05-19 HK HK11104948.2A patent/HK1150901A1/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20100187696A1 (en) | 2010-07-29 |
TW201037788A (en) | 2010-10-16 |
CN101901751A (zh) | 2010-12-01 |
CN101901751B (zh) | 2014-11-05 |
TWI485807B (zh) | 2015-05-21 |
US7943465B2 (en) | 2011-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
HK1144124A1 (en) | Semiconductor component and method of manufacture | |
HK1144492A1 (zh) | 半導體元件及製造方法 | |
HK1146330A1 (en) | Semiconductor component and method of manufacture | |
HK1141138A1 (zh) | 半導體元件及製造方法 | |
EP2390903A4 (en) | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING | |
HK1194861A1 (zh) | 半導體器件及其製造方法 | |
EP2416366A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | |
EP2428983A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
TWI562940B (en) | Wafer container and method of manufacture | |
EP2589077A4 (en) | MICROELECTRONIC CASE AND METHOD FOR MANUFACTURING THE SAME | |
GB2467911B (en) | A semiconductor structure and a method of manufacture thereof | |
EP2313919A4 (en) | TRANCHE THROUGH INTERCONNECTION HOLE AND METHOD FOR MANUFACTURING SAME | |
HK1199329A1 (zh) | 半導體加工工藝傳感器及表徵半導體加工工藝的方法 | |
EP2451741A4 (en) | SEMICONDUCTOR ANOKRISTAL AND MANUFACTURING METHOD THEREFOR | |
EP2469581A4 (en) | SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR | |
EP2437879A4 (en) | MULTIPHASE MICROPARTICLES AND METHOD FOR THE PRODUCTION THEREOF | |
EP2624286A4 (en) | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | |
HK1131696A1 (en) | Semiconductor component and method of manufacture | |
EP2402985A4 (en) | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE | |
GB2498675B (en) | Semiconductor structure and methods of manufacture | |
EP2525634A4 (en) | SUBSTRATE AND METHOD FOR MANUFACTURING THE SUBSTRATE | |
GB2471553B (en) | Microparticles and method of making microparticles | |
HK1125739A1 (en) | Semiconductor component and method of manufacture | |
EP2418305A4 (en) | MATRIX AND MANUFACTURING METHOD THEREOF | |
SG10201600407SA (en) | Semiconductor device and manufacturing method of the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20211127 |