HK1140311A1 - Active matrix optical device - Google Patents

Active matrix optical device

Info

Publication number
HK1140311A1
HK1140311A1 HK10106629.4A HK10106629A HK1140311A1 HK 1140311 A1 HK1140311 A1 HK 1140311A1 HK 10106629 A HK10106629 A HK 10106629A HK 1140311 A1 HK1140311 A1 HK 1140311A1
Authority
HK
Hong Kong
Prior art keywords
optical device
active matrix
matrix optical
active
optical
Prior art date
Application number
HK10106629.4A
Other languages
English (en)
Inventor
Jeremy Burroughes
Mark Bale
Mark Garbett
Jonathan Halls
Original Assignee
Cambridge Display Tech Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge Display Tech Ltd filed Critical Cambridge Display Tech Ltd
Publication of HK1140311A1 publication Critical patent/HK1140311A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
HK10106629.4A 2007-04-04 2010-07-08 Active matrix optical device HK1140311A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0706654A GB2450675A (en) 2007-04-04 2007-04-04 Active matrix organic displays
PCT/GB2008/001190 WO2008122780A2 (en) 2007-04-04 2008-04-03 Active matrix optical device

Publications (1)

Publication Number Publication Date
HK1140311A1 true HK1140311A1 (en) 2010-10-08

Family

ID=38090911

Family Applications (1)

Application Number Title Priority Date Filing Date
HK10106629.4A HK1140311A1 (en) 2007-04-04 2010-07-08 Active matrix optical device

Country Status (8)

Country Link
US (1) US8013328B2 (xx)
EP (1) EP2132779B1 (xx)
JP (1) JP2010524026A (xx)
KR (1) KR101474580B1 (xx)
CN (1) CN101652862B (xx)
GB (1) GB2450675A (xx)
HK (1) HK1140311A1 (xx)
WO (1) WO2008122780A2 (xx)

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JP2009021477A (ja) * 2007-07-13 2009-01-29 Sony Corp 半導体装置およびその製造方法、ならびに表示装置およびその製造方法
JP5325465B2 (ja) * 2008-06-03 2013-10-23 株式会社日立製作所 薄膜トランジスタおよびそれを用いた装置
JP2011035037A (ja) * 2009-07-30 2011-02-17 Sony Corp 回路基板の製造方法および回路基板
DE102011053665B4 (de) * 2010-09-20 2016-06-30 Lg Display Co., Ltd. Anzeigevorrichtung mit organischen lichtemittierenden Dioden und Herstellungsverfahren für dieselbe
US8877531B2 (en) 2010-09-27 2014-11-04 Applied Materials, Inc. Electronic apparatus
US8568182B2 (en) 2010-09-27 2013-10-29 Hewlett-Packard Development Company, L.P. Display
KR102138213B1 (ko) 2010-11-24 2020-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유기 광 디바이스 및 유기 광 디바이스의 보호 부재
JP5827578B2 (ja) 2011-02-14 2015-12-02 株式会社半導体エネルギー研究所 光学素子の作製方法
US9935152B2 (en) 2012-12-27 2018-04-03 General Electric Company X-ray detector having improved noise performance
US9917133B2 (en) 2013-12-12 2018-03-13 General Electric Company Optoelectronic device with flexible substrate
US9257480B2 (en) * 2013-12-30 2016-02-09 General Electric Company Method of manufacturing photodiode detectors
IN2014DE00708A (xx) 2014-03-12 2015-09-18 Indian Inst Technology Kanpur
US10732131B2 (en) 2014-03-13 2020-08-04 General Electric Company Curved digital X-ray detector for weld inspection
KR101831346B1 (ko) * 2015-08-07 2018-02-23 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
CN105529337B (zh) * 2016-01-28 2018-12-11 深圳市华星光电技术有限公司 柔性阵列基板结构及其制造方法
US9842883B2 (en) * 2016-01-28 2017-12-12 Shenzhen China Star Optoelectronics Technology Co., Ltd. Flexible array substrate structure and manufacturing method for the same
CN107369784B (zh) * 2017-08-31 2019-11-26 深圳市华星光电半导体显示技术有限公司 Oled-tft基板及其制造方法、显示面板
CN110767677A (zh) * 2018-08-06 2020-02-07 云谷（固安）科技有限公司 显示面板、显示屏及显示终端
CN114203890B (zh) * 2021-12-10 2024-01-26 Tcl华星光电技术有限公司 显示面板及显示面板的制备方法

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TW410478B (en) * 1998-05-29 2000-11-01 Lucent Technologies Inc Thin-film transistor monolithically integrated with an organic light-emitting diode
JP4792634B2 (ja) * 2000-12-28 2011-10-12 Ｔｄｋ株式会社 光機能素子、有機ｅｌ素子および有機ｅｌ表示装置
JP4841751B2 (ja) * 2001-06-01 2011-12-21 株式会社半導体エネルギー研究所 有機半導体装置及びその作製方法
TW554525B (en) * 2002-08-28 2003-09-21 Ind Tech Res Inst Organic integration device of thin film transistor and light emitting diode
JP2006019630A (ja) * 2004-07-05 2006-01-19 Seiko Epson Corp 配線形成方法
JP4707996B2 (ja) * 2004-11-08 2011-06-22 共同印刷株式会社 フレキシブルディスプレイ及びその製造方法
EP1868246A1 (en) * 2005-03-30 2007-12-19 Pioneer Corporation Organic el display device, organic transistor and methods for manufacturing such organic el display device and organic transistor
CN1893105A (zh) * 2005-03-31 2007-01-10 精工爱普生株式会社 发光装置、发光装置的制造方法及电子设备
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KR101209046B1 (ko) * 2005-07-27 2012-12-06 삼성디스플레이 주식회사 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법
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WO2008120351A1 (ja) * 2007-03-29 2008-10-09 Pioneer Corporation 有機ｅｌ表示装置及びその製造方法

Also Published As

Publication number Publication date
WO2008122780A2 (en) 2008-10-16
US20100102300A1 (en) 2010-04-29
GB2450675A (en) 2009-01-07
GB0706654D0 (en) 2007-05-16
KR20100015357A (ko) 2010-02-12
JP2010524026A (ja) 2010-07-15
CN101652862B (zh) 2012-05-30
KR101474580B1 (ko) 2014-12-18
EP2132779A2 (en) 2009-12-16
EP2132779B1 (en) 2012-08-15
CN101652862A (zh) 2010-02-17
WO2008122780A3 (en) 2008-12-24
US8013328B2 (en) 2011-09-06

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20160403