HK1088366A1 - Thin film forming method and forming device therefor - Google Patents

Thin film forming method and forming device therefor

Info

Publication number
HK1088366A1
HK1088366A1 HK06108543.9A HK06108543A HK1088366A1 HK 1088366 A1 HK1088366 A1 HK 1088366A1 HK 06108543 A HK06108543 A HK 06108543A HK 1088366 A1 HK1088366 A1 HK 1088366A1
Authority
HK
Hong Kong
Prior art keywords
thin film
device therefor
film forming
forming method
forming device
Prior art date
Application number
HK06108543.9A
Other languages
English (en)
Inventor
Yizhou Song
Takeshi Sakurai
Original Assignee
Shincron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shincron Co Ltd filed Critical Shincron Co Ltd
Publication of HK1088366A1 publication Critical patent/HK1088366A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
    • C23C14/0078—Reactive sputtering by exposing the substrates to reactive gases intermittently by moving the substrates between spatially separate sputtering and reaction stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Manufacturing Optical Record Carriers (AREA)
HK06108543.9A 2003-06-03 2006-08-01 Thin film forming method and forming device therefor HK1088366A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003158253 2003-06-03
PCT/JP2004/007609 WO2004108981A1 (fr) 2003-06-03 2004-06-02 Procede et dispositif de fabrication d'un film mince

Publications (1)

Publication Number Publication Date
HK1088366A1 true HK1088366A1 (en) 2006-11-03

Family

ID=33508423

Family Applications (1)

Application Number Title Priority Date Filing Date
HK06108543.9A HK1088366A1 (en) 2003-06-03 2006-08-01 Thin film forming method and forming device therefor

Country Status (7)

Country Link
US (1) US20060189046A1 (fr)
EP (1) EP1630248B1 (fr)
JP (1) JP3779317B2 (fr)
KR (1) KR100729031B1 (fr)
CN (1) CN100489149C (fr)
HK (1) HK1088366A1 (fr)
WO (1) WO2004108981A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4524354B2 (ja) * 2008-02-28 2010-08-18 国立大学法人東北大学 マイクロ波プラズマ処理装置、それに用いる誘電体窓部材および誘電体窓部材の製造方法
JPWO2010018639A1 (ja) * 2008-08-15 2012-01-26 株式会社シンクロン 蒸着装置及び薄膜デバイスの製造方法
JP5036827B2 (ja) * 2008-09-05 2012-09-26 株式会社シンクロン 成膜方法及び撥油性基材
CN103046008B (zh) * 2008-09-30 2015-04-01 佳能安内华股份有限公司 溅射方法
JP5099101B2 (ja) * 2009-01-23 2012-12-12 東京エレクトロン株式会社 プラズマ処理装置
CN103038387B (zh) * 2011-08-02 2015-05-27 新柯隆株式会社 碳化硅薄膜的成膜方法
CN103959425A (zh) * 2011-09-28 2014-07-30 莱博德光学有限责任公司 用于在基底上制造减反射层的方法和设备
JP2017201651A (ja) * 2016-05-02 2017-11-09 株式会社神戸製鋼所 酸化物半導体の製造方法
JP7131916B2 (ja) * 2017-03-31 2022-09-06 芝浦メカトロニクス株式会社 プラズマ処理装置
CN108690965B (zh) * 2017-03-31 2020-06-30 芝浦机械电子装置株式会社 等离子体处理装置
CN110499508B (zh) * 2018-05-18 2021-11-12 比亚迪股份有限公司 金属制品及其制备方法和应用

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4420385A (en) * 1983-04-15 1983-12-13 Gryphon Products Apparatus and process for sputter deposition of reacted thin films
US4986214A (en) * 1986-12-16 1991-01-22 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus
US5618388A (en) * 1988-02-08 1997-04-08 Optical Coating Laboratory, Inc. Geometries and configurations for magnetron sputtering apparatus
US5225057A (en) * 1988-02-08 1993-07-06 Optical Coating Laboratory, Inc. Process for depositing optical films on both planar and non-planar substrates
US5124013A (en) * 1988-02-08 1992-06-23 Optical Coating Laboratory, Inc. High ratio planetary drive system and method for vacuum chamber
US4851095A (en) * 1988-02-08 1989-07-25 Optical Coating Laboratory, Inc. Magnetron sputtering apparatus and process
US5798027A (en) * 1988-02-08 1998-08-25 Optical Coating Laboratory, Inc. Process for depositing optical thin films on both planar and non-planar substrates
EP0409451A1 (fr) * 1989-07-18 1991-01-23 Optical Coating Laboratory, Inc. Procédé pour déposer des couches minces optiques sur des substrats plans ou non plans
US5789071A (en) * 1992-11-09 1998-08-04 Northwestern University Multilayer oxide coatings
JP3293912B2 (ja) * 1992-12-10 2002-06-17 松下電器産業株式会社 酸化物薄膜の形成方法
EP0600303B1 (fr) * 1992-12-01 2002-02-06 Matsushita Electric Industrial Co., Ltd. Procédé pour fabriquer une couche mince diélectrique
JPH08176821A (ja) * 1994-12-26 1996-07-09 Shincron:Kk 薄膜形成方法および装置
JP3555797B2 (ja) * 1996-03-11 2004-08-18 富士写真フイルム株式会社 成膜装置および成膜方法
US6103320A (en) * 1998-03-05 2000-08-15 Shincron Co., Ltd. Method for forming a thin film of a metal compound by vacuum deposition
JP3735461B2 (ja) * 1998-03-27 2006-01-18 株式会社シンクロン 複合金属の化合物薄膜形成方法及びその薄膜形成装置
DE19824364A1 (de) * 1998-05-30 1999-12-02 Bosch Gmbh Robert Verfahren zum Aufbringen eines Verschleißschutz-Schichtsystems mit optischen Eigenschaften auf Oberflächen
JP2000017457A (ja) * 1998-07-03 2000-01-18 Shincron:Kk 薄膜形成装置および薄膜形成方法
JP2000119846A (ja) * 1998-10-13 2000-04-25 Nikon Corp 薄膜の製造方法
JP3738154B2 (ja) * 1999-06-30 2006-01-25 株式会社シンクロン 複合金属化合物の薄膜形成方法及びその薄膜形成装置
US7931787B2 (en) * 2002-02-26 2011-04-26 Donald Bennett Hilliard Electron-assisted deposition process and apparatus

Also Published As

Publication number Publication date
JPWO2004108981A1 (ja) 2006-07-20
JP3779317B2 (ja) 2006-05-24
EP1630248A1 (fr) 2006-03-01
US20060189046A1 (en) 2006-08-24
CN1795286A (zh) 2006-06-28
EP1630248B1 (fr) 2012-05-02
CN100489149C (zh) 2009-05-20
WO2004108981A1 (fr) 2004-12-16
EP1630248A4 (fr) 2008-11-12
KR100729031B1 (ko) 2007-06-14
KR20060012659A (ko) 2006-02-08

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20180602