HK1016744A1 - Electrochemical removal of material, particularly excess emitter material in electron-emitting device - Google Patents

Electrochemical removal of material, particularly excess emitter material in electron-emitting device

Info

Publication number
HK1016744A1
HK1016744A1 HK99101507A HK99101507A HK1016744A1 HK 1016744 A1 HK1016744 A1 HK 1016744A1 HK 99101507 A HK99101507 A HK 99101507A HK 99101507 A HK99101507 A HK 99101507A HK 1016744 A1 HK1016744 A1 HK 1016744A1
Authority
HK
Hong Kong
Prior art keywords
electron
emitting device
electrochemical removal
excess emitter
particularly excess
Prior art date
Application number
HK99101507A
Other languages
English (en)
Inventor
Christopher J Spindt
Gabriela S Chakarova
Maria S Nikolova
Peter C Searson
Duane A Haven
Nils Johan Knall
John C Macaulay
Roger W Barton
Original Assignee
Candescent Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Candescent Tech Corp filed Critical Candescent Tech Corp
Publication of HK1016744A1 publication Critical patent/HK1016744A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
HK99101507A 1996-03-05 1999-04-12 Electrochemical removal of material, particularly excess emitter material in electron-emitting device HK1016744A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/610,729 US5766446A (en) 1996-03-05 1996-03-05 Electrochemical removal of material, particularly excess emitter material in electron-emitting device
PCT/US1997/002973 WO1997033297A1 (en) 1996-03-05 1997-03-05 Electrochemical removal of material, particularly excess emitter material in electron-emitting device

Publications (1)

Publication Number Publication Date
HK1016744A1 true HK1016744A1 (en) 1999-11-05

Family

ID=24446186

Family Applications (1)

Application Number Title Priority Date Filing Date
HK99101507A HK1016744A1 (en) 1996-03-05 1999-04-12 Electrochemical removal of material, particularly excess emitter material in electron-emitting device

Country Status (7)

Country Link
US (1) US5766446A (ja)
EP (1) EP0885452B1 (ja)
JP (1) JP3747291B2 (ja)
KR (1) KR100305986B1 (ja)
DE (2) DE885452T1 (ja)
HK (1) HK1016744A1 (ja)
WO (1) WO1997033297A1 (ja)

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US6027632A (en) * 1996-03-05 2000-02-22 Candescent Technologies Corporation Multi-step removal of excess emitter material in fabricating electron-emitting device
US5893967A (en) * 1996-03-05 1999-04-13 Candescent Technologies Corporation Impedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting device
US5863233A (en) * 1996-03-05 1999-01-26 Candescent Technologies Corporation Field emitter fabrication using open circuit electrochemical lift off
US6500885B1 (en) * 1997-02-28 2002-12-31 Candescent Technologies Corporation Polycarbonate-containing liquid chemical formulation and methods for making and using polycarbonate film
KR100621293B1 (ko) * 1997-06-30 2006-09-13 컨데슨트 인터렉추얼 프로퍼티 서비시스 인코포레이티드 전자방출장치에서 과잉 이미터재료를 제거하기 위한 임피던스-이용 전기화학적 방법 및 전기화학
US6120674A (en) * 1997-06-30 2000-09-19 Candescent Technologies Corporation Electrochemical removal of material in electron-emitting device
US6007695A (en) * 1997-09-30 1999-12-28 Candescent Technologies Corporation Selective removal of material using self-initiated galvanic activity in electrolytic bath
US6103095A (en) * 1998-02-27 2000-08-15 Candescent Technologies Corporation Non-hazardous wet etching method
US6392750B1 (en) 1999-08-31 2002-05-21 Candescent Technologies Corporation Use of scattered and/or transmitted light in determining characteristics, including dimensional information, of object such as part of flat-panel display
WO2001035435A1 (en) * 1999-11-12 2001-05-17 Orion Electric Co., Ltd. Electron tube cathode and method for manufacturing the same
US6848970B2 (en) * 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US6991526B2 (en) * 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
US20040182721A1 (en) * 2003-03-18 2004-09-23 Applied Materials, Inc. Process control in electro-chemical mechanical polishing
US6821409B2 (en) * 2001-04-06 2004-11-23 Asm-Nutool, Inc. Electroetching methods and systems using chemical and mechanical influence
ATE366633T1 (de) * 2001-04-27 2007-08-15 Erowa Ag Spannvorrichtung
US6837983B2 (en) * 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
US7312305B2 (en) * 2002-03-20 2007-12-25 Morehouse School Of Medicine Tumor cytotoxicity induced by modulators of the CXCR4 receptor
US20040072445A1 (en) * 2002-07-11 2004-04-15 Applied Materials, Inc. Effective method to improve surface finish in electrochemically assisted CMP
US20050061674A1 (en) * 2002-09-16 2005-03-24 Yan Wang Endpoint compensation in electroprocessing
US7112270B2 (en) * 2002-09-16 2006-09-26 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
US7842169B2 (en) * 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
JP4803998B2 (ja) * 2004-12-08 2011-10-26 ソニー株式会社 電界放出型電子放出素子の製造方法
US7655565B2 (en) * 2005-01-26 2010-02-02 Applied Materials, Inc. Electroprocessing profile control
US20070218587A1 (en) * 2006-03-07 2007-09-20 Applied Materials, Inc. Soft conductive polymer processing pad and method for fabricating the same
US7422982B2 (en) * 2006-07-07 2008-09-09 Applied Materials, Inc. Method and apparatus for electroprocessing a substrate with edge profile control
TWI339444B (en) * 2007-05-30 2011-03-21 Au Optronics Corp Conductor structure, pixel structure, and methods of forming the same
TWI437615B (zh) * 2011-06-07 2014-05-11 Au Optronics Corp 場發射顯示元件之製作方法及應用於製作場發射顯示元件之電化學系統

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US5462467A (en) * 1993-09-08 1995-10-31 Silicon Video Corporation Fabrication of filamentary field-emission device, including self-aligned gate
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GB9416754D0 (en) * 1994-08-18 1994-10-12 Isis Innovation Field emitter structures
FR2726122B1 (fr) * 1994-10-19 1996-11-22 Commissariat Energie Atomique Procede de fabrication d'une source d'electrons a micropointes
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Also Published As

Publication number Publication date
EP0885452A1 (en) 1998-12-23
EP0885452B1 (en) 2003-10-08
KR19990087637A (ko) 1999-12-27
JP3747291B2 (ja) 2006-02-22
DE885452T1 (de) 1999-07-22
KR100305986B1 (ko) 2001-12-17
JP2000506224A (ja) 2000-05-23
DE69725430D1 (de) 2003-11-13
US5766446A (en) 1998-06-16
WO1997033297A1 (en) 1997-09-12
DE69725430T2 (de) 2004-07-22

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Legal Events

Date Code Title Description
CHPA Change of a particular in the register (except of change of ownership)
PF Patent in force
AS Change of ownership

Owner name: CANDESCENT INTELLECTUAL PROPERTY SERVICES, INC.

Free format text: FORMER OWNER(S): CANDESCENT TECHNOLOGIES CORPORATION

CHPA Change of a particular in the register (except of change of ownership)
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20110305