HK1009159A1 - Seed crystalfor growing monocrystals, use of the seed crystal and process for producing sic monocrystals or monocrystalline sic layers - Google Patents

Seed crystalfor growing monocrystals, use of the seed crystal and process for producing sic monocrystals or monocrystalline sic layers

Info

Publication number
HK1009159A1
HK1009159A1 HK98109829A HK98109829A HK1009159A1 HK 1009159 A1 HK1009159 A1 HK 1009159A1 HK 98109829 A HK98109829 A HK 98109829A HK 98109829 A HK98109829 A HK 98109829A HK 1009159 A1 HK1009159 A1 HK 1009159A1
Authority
HK
Hong Kong
Prior art keywords
monocrystals
seed
sic
crystalfor
growing
Prior art date
Application number
HK98109829A
Other languages
English (en)
Inventor
Johannes Volkl
Rene Stein
Original Assignee
Siements Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siements Ag filed Critical Siements Ag
Publication of HK1009159A1 publication Critical patent/HK1009159A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
HK98109829A 1995-08-16 1998-08-11 Seed crystalfor growing monocrystals, use of the seed crystal and process for producing sic monocrystals or monocrystalline sic layers HK1009159A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19530119 1995-08-16
PCT/DE1996/001152 WO1997007265A1 (de) 1995-08-16 1996-06-27 KEIMKRISTALL ZUM HERSTELLEN VON EINKRISTALLEN, VERWENDUNG DES KEIMKRISTALLS UND VERFAHREN ZUM HERSTELLEN VON SiC-EINKRISTALLEN ODER EINKRISTALLINEN SiC-SCHICHTEN

Publications (1)

Publication Number Publication Date
HK1009159A1 true HK1009159A1 (en) 1999-05-28

Family

ID=7769615

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98109829A HK1009159A1 (en) 1995-08-16 1998-08-11 Seed crystalfor growing monocrystals, use of the seed crystal and process for producing sic monocrystals or monocrystalline sic layers

Country Status (8)

Country Link
US (1) US5985026A (xx)
EP (1) EP0845055B1 (xx)
JP (1) JP4056562B2 (xx)
KR (1) KR100454275B1 (xx)
DE (1) DE59607635D1 (xx)
HK (1) HK1009159A1 (xx)
RU (1) RU2163273C2 (xx)
WO (1) WO1997007265A1 (xx)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4691292B2 (ja) * 1999-07-07 2011-06-01 エスアイクリスタル アクチエンゲゼルシャフト ＳｉＣ種結晶の外周壁を有する種結晶ホルダ
KR20010026069A (ko) * 1999-09-02 2001-04-06 남기석 실리콘질화물(질화실리콘)을 이용한 계면의 변형에 의한
JP4275308B2 (ja) 2000-12-28 2009-06-10 株式会社デンソー 炭化珪素単結晶の製造方法およびその製造装置
US6706114B2 (en) 2001-05-21 2004-03-16 Cree, Inc. Methods of fabricating silicon carbide crystals
US6814801B2 (en) * 2002-06-24 2004-11-09 Cree, Inc. Method for producing semi-insulating resistivity in high purity silicon carbide crystals
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
JP5391653B2 (ja) 2008-01-15 2014-01-15 住友電気工業株式会社 窒化アルミニウム結晶の成長方法および窒化アルミニウム結晶の製造方法
JP2011121815A (ja) * 2009-12-10 2011-06-23 Sumitomo Electric Ind Ltd 単結晶の製造方法
JP2011190154A (ja) * 2010-03-16 2011-09-29 Sumitomo Electric Ind Ltd 結晶の製造方法、結晶の製造装置および積層膜
KR102245509B1 (ko) * 2013-09-06 2021-04-28 지티에이티 코포레이션 저결함밀도를 갖는 벌크 탄화규소
US20170137962A1 (en) * 2015-11-16 2017-05-18 National Chung-Shan Institute Of Science And Technology Fabrication Method for Growing Single Crystal of Multi-Type Compound
CN112962083A (zh) * 2021-02-03 2021-06-15 哈尔滨科友半导体产业装备与技术研究院有限公司 一种用于碳化硅单晶生长的籽晶背部镀膜的装置与方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3425879A (en) * 1965-10-24 1969-02-04 Texas Instruments Inc Method of making shaped epitaxial deposits
NL7405352A (xx) * 1973-04-30 1974-11-01
US4614672A (en) * 1985-06-06 1986-09-30 The United States Of America As Represented By The Secretary Of The Navy Liquid phase epitaxy (LPE) of silicon carbide
JPS61291494A (ja) * 1985-06-19 1986-12-22 Sharp Corp 炭化珪素単結晶基板の製造方法
US4923716A (en) * 1988-09-26 1990-05-08 Hughes Aircraft Company Chemical vapor desposition of silicon carbide
DE3915053C2 (de) * 1989-05-08 1995-03-30 Siemens Ag Verfahren zum Herstellen von einkristallinem Siliziumkarbid SiC
JP3111661B2 (ja) * 1992-07-24 2000-11-27 ソニー株式会社 ドライエッチング方法
IT1264903B1 (it) * 1993-06-30 1996-10-17 Sniaricerche S C P A Cristalli liquidi metallo-organici in una matrice polimerica
US5512375A (en) 1993-10-14 1996-04-30 Intevac, Inc. Pseudomorphic substrates
JPH07257993A (ja) * 1994-03-22 1995-10-09 Sumitomo Electric Ind Ltd バルク単結晶の成長方法

Also Published As

Publication number Publication date
KR100454275B1 (ko) 2005-01-31
EP0845055A1 (de) 1998-06-03
KR19990036372A (ko) 1999-05-25
RU2163273C2 (ru) 2001-02-20
DE59607635D1 (de) 2001-10-11
EP0845055B1 (de) 2001-09-05
JPH11510781A (ja) 1999-09-21
WO1997007265A1 (de) 1997-02-27
US5985026A (en) 1999-11-16
JP4056562B2 (ja) 2008-03-05

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Legal Events

Date Code Title Description
PF Patent in force
AS Change of ownership

Owner name: SICRYSTAL AG

Free format text: FORMER OWNER(S): SIEMENTS AKTIENGESELLSCHAFT