HK1008699A1 - Phase-shifting lithographic masks having phase-shifting layers of differing compositions - Google Patents

Phase-shifting lithographic masks having phase-shifting layers of differing compositions

Info

Publication number
HK1008699A1
HK1008699A1 HK98108889A HK98108889A HK1008699A1 HK 1008699 A1 HK1008699 A1 HK 1008699A1 HK 98108889 A HK98108889 A HK 98108889A HK 98108889 A HK98108889 A HK 98108889A HK 1008699 A1 HK1008699 A1 HK 1008699A1
Authority
HK
Hong Kong
Prior art keywords
phase
shifting
layers
lithographic masks
differing compositions
Prior art date
Application number
HK98108889A
Other languages
English (en)
Inventor
Christophe Pierrat
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Publication of HK1008699A1 publication Critical patent/HK1008699A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
HK98108889A 1992-08-18 1998-07-06 Phase-shifting lithographic masks having phase-shifting layers of differing compositions HK1008699A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US93162192A 1992-08-18 1992-08-18

Publications (1)

Publication Number Publication Date
HK1008699A1 true HK1008699A1 (en) 1999-05-14

Family

ID=25461092

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98108889A HK1008699A1 (en) 1992-08-18 1998-07-06 Phase-shifting lithographic masks having phase-shifting layers of differing compositions

Country Status (9)

Country Link
US (1) US5405721A (ja)
EP (1) EP0583942B1 (ja)
JP (1) JPH07295200A (ja)
KR (1) KR100281151B1 (ja)
DE (1) DE69324636T2 (ja)
ES (1) ES2132192T3 (ja)
HK (1) HK1008699A1 (ja)
SG (1) SG47405A1 (ja)
TW (1) TW284911B (ja)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0127662B1 (ko) * 1994-03-11 1997-12-26 김주용 반도체 소자의 위상반전 마스크 제조방법
US5543253A (en) * 1994-08-08 1996-08-06 Electronics & Telecommunications Research Inst. Photomask for t-gate formation and process for fabricating the same
US5589303A (en) * 1994-12-30 1996-12-31 Lucent Technologies Inc. Self-aligned opaque regions for attenuating phase-shifting masks
US5536606A (en) * 1995-05-30 1996-07-16 Micron Technology, Inc. Method for making self-aligned rim phase shifting masks for sub-micron lithography
US5582939A (en) * 1995-07-10 1996-12-10 Micron Technology, Inc. Method for fabricating and using defect-free phase shifting masks
US5914202A (en) * 1996-06-10 1999-06-22 Sharp Microeletronics Technology, Inc. Method for forming a multi-level reticle
KR0166854B1 (ko) * 1996-06-27 1999-01-15 문정환 위상반전 마스크의 결함 수정방법
US5851704A (en) * 1996-12-09 1998-12-22 Micron Technology, Inc. Method and apparatus for the fabrication of semiconductor photomask
US5908718A (en) * 1997-03-31 1999-06-01 Nec Corporation Phase shifting photomask with two different transparent regions
US5882823A (en) * 1997-05-21 1999-03-16 International Business Machines Corporation Fib repair method
US6027837A (en) * 1997-10-14 2000-02-22 International Business Machines Corporation Method for tuning an attenuating phase shift mask
US6096459A (en) * 1998-12-28 2000-08-01 Micron Technology, Inc. Method for repairing alternating phase shifting masks
US6114073A (en) * 1998-12-28 2000-09-05 Micron Technology, Inc. Method for repairing phase shifting masks
US8206568B2 (en) * 1999-06-22 2012-06-26 President And Fellows Of Harvard College Material deposition techniques for control of solid state aperture surface properties
US6346352B1 (en) 2000-02-25 2002-02-12 International Business Machines Corporation Quartz defect removal utilizing gallium staining and femtosecond ablation
US6716362B1 (en) 2000-10-24 2004-04-06 International Business Machines Corporation Method for thin film laser reflectance correlation for substrate etch endpoint
WO2002044812A2 (en) 2000-12-01 2002-06-06 Unaxis Usa Inc. Embedded attenuated phase shift mask and method of making embedded attenuated phase shift mask
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
US20030064521A1 (en) * 2001-09-28 2003-04-03 Zhijian Lu Method for ending point detection during etching process
US6841310B2 (en) * 2002-02-05 2005-01-11 Micron Technology, Inc. Radiation patterning tools, and methods of forming radiation patterning tools
US6939650B2 (en) * 2003-01-17 2005-09-06 Freescale Semiconductor, Inc. Method of patterning photoresist on a wafer using a transmission mask with a carbon layer
US7303841B2 (en) * 2004-03-26 2007-12-04 Taiwan Semiconductor Manufacturing Company Repair of photolithography masks by sub-wavelength artificial grating technology
JP4535243B2 (ja) * 2004-05-11 2010-09-01 ルネサスエレクトロニクス株式会社 位相シフトマスクの製造方法
TWI375114B (en) * 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
US7588864B2 (en) * 2004-12-06 2009-09-15 Macronix International Co., Ltd. Mask, method of manufacturing mask, and lithographic process
US7468271B2 (en) * 2005-04-06 2008-12-23 President And Fellows Of Harvard College Molecular characterization with carbon nanotube control
WO2017038213A1 (ja) * 2015-08-31 2017-03-09 Hoya株式会社 マスクブランク、位相シフトマスクおよびその製造方法、並びに半導体デバイスの製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5147763A (en) * 1988-10-19 1992-09-15 Canon Kabushiki Kaisha Process for producing molding stamper for data recording medium substrate
US5362591A (en) * 1989-10-09 1994-11-08 Hitachi Ltd. Et Al. Mask having a phase shifter and method of manufacturing same
JP2634289B2 (ja) * 1990-04-18 1997-07-23 三菱電機株式会社 位相シフトマスクの修正方法
JPH0468352A (ja) * 1990-07-10 1992-03-04 Dainippon Printing Co Ltd 位相シフト層を有するフォトマスク及びその製造方法
US5144362A (en) * 1990-11-14 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Projection aligner
JPH05165189A (ja) * 1991-12-12 1993-06-29 Hitachi Ltd 光学マスク及びその修正方法
JP3034096B2 (ja) * 1991-11-12 2000-04-17 大日本印刷株式会社 位相シフトフォトマスクの修正方法
JPH07134397A (ja) * 1993-11-09 1995-05-23 Fujitsu Ltd 位相シフトマスクの修正方法と位相シフトマスク用基板

Also Published As

Publication number Publication date
TW284911B (ja) 1996-09-01
EP0583942A3 (en) 1996-07-24
KR100281151B1 (ko) 2001-03-02
KR940004721A (ko) 1994-03-15
SG47405A1 (en) 1998-04-17
DE69324636T2 (de) 1999-09-23
ES2132192T3 (es) 1999-08-16
EP0583942A2 (en) 1994-02-23
EP0583942B1 (en) 1999-04-28
JPH07295200A (ja) 1995-11-10
US5405721A (en) 1995-04-11
DE69324636D1 (de) 1999-06-02

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)