HK1004876A1 - Method for fabricating suspension members for micromachined sensors - Google Patents

Method for fabricating suspension members for micromachined sensors

Info

Publication number
HK1004876A1
HK1004876A1 HK98104043A HK98104043A HK1004876A1 HK 1004876 A1 HK1004876 A1 HK 1004876A1 HK 98104043 A HK98104043 A HK 98104043A HK 98104043 A HK98104043 A HK 98104043A HK 1004876 A1 HK1004876 A1 HK 1004876A1
Authority
HK
Hong Kong
Prior art keywords
suspension members
micromachined sensors
fabricating
fabricating suspension
micromachined
Prior art date
Application number
HK98104043A
Other languages
English (en)
Inventor
Raymond K Erickson
Original Assignee
I O Sensors Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by I O Sensors Inc filed Critical I O Sensors Inc
Publication of HK1004876A1 publication Critical patent/HK1004876A1/xx

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/012—Bonding, e.g. electrostatic for strain gauges

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Testing Or Calibration Of Command Recording Devices (AREA)
HK98104043A 1994-03-28 1998-05-11 Method for fabricating suspension members for micromachined sensors HK1004876A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/218,363 US5484073A (en) 1994-03-28 1994-03-28 Method for fabricating suspension members for micromachined sensors
PCT/US1995/003377 WO1995026567A1 (fr) 1994-03-28 1995-03-16 Procede de fabrication d'elements de suspension pour capteurs micro-usines

Publications (1)

Publication Number Publication Date
HK1004876A1 true HK1004876A1 (en) 1998-12-11

Family

ID=22814808

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98104043A HK1004876A1 (en) 1994-03-28 1998-05-11 Method for fabricating suspension members for micromachined sensors

Country Status (8)

Country Link
US (1) US5484073A (fr)
EP (1) EP0700580B1 (fr)
JP (2) JP3741723B2 (fr)
AU (1) AU2102195A (fr)
CA (1) CA2159642C (fr)
DE (1) DE69531580T2 (fr)
HK (1) HK1004876A1 (fr)
WO (1) WO1995026567A1 (fr)

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US20040240034A1 (en) * 2001-11-30 2004-12-02 Scharf Bruce R. Diffraction compensation using a patterned reflector
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US7687126B2 (en) 2005-08-22 2010-03-30 3M Innovative Properties Company Adhesive articles and release liners
EP1921042A1 (fr) * 2006-11-10 2008-05-14 ETA SA Manufacture Horlogère Suisse Procédé de fabrication de pièces de micromécanique multiniveaux en silicium et pièces ainsi obtenues
CA2826558C (fr) 2011-02-07 2021-01-26 Ion Geophysical Corporation Procede et appareil de detection de signaux sous-marins
US8519515B2 (en) 2011-04-13 2013-08-27 United Microlectronics Corp. TSV structure and method for forming the same
US8481425B2 (en) 2011-05-16 2013-07-09 United Microelectronics Corp. Method for fabricating through-silicon via structure
US8822336B2 (en) 2011-06-16 2014-09-02 United Microelectronics Corp. Through-silicon via forming method
US8828745B2 (en) 2011-07-06 2014-09-09 United Microelectronics Corp. Method for manufacturing through-silicon via
US8518823B2 (en) 2011-12-23 2013-08-27 United Microelectronics Corp. Through silicon via and method of forming the same
US8609529B2 (en) 2012-02-01 2013-12-17 United Microelectronics Corp. Fabrication method and structure of through silicon via
US8691600B2 (en) 2012-05-02 2014-04-08 United Microelectronics Corp. Method for testing through-silicon-via (TSV) structures
US8691688B2 (en) 2012-06-18 2014-04-08 United Microelectronics Corp. Method of manufacturing semiconductor structure
US9275933B2 (en) 2012-06-19 2016-03-01 United Microelectronics Corp. Semiconductor device
US8900996B2 (en) 2012-06-21 2014-12-02 United Microelectronics Corp. Through silicon via structure and method of fabricating the same
US8525296B1 (en) 2012-06-26 2013-09-03 United Microelectronics Corp. Capacitor structure and method of forming the same
US8912844B2 (en) 2012-10-09 2014-12-16 United Microelectronics Corp. Semiconductor structure and method for reducing noise therein
DE102012219660B4 (de) * 2012-10-26 2023-10-12 Robert Bosch Gmbh Mechanisches Bauteil
US9035457B2 (en) 2012-11-29 2015-05-19 United Microelectronics Corp. Substrate with integrated passive devices and method of manufacturing the same
US8716104B1 (en) 2012-12-20 2014-05-06 United Microelectronics Corp. Method of fabricating isolation structure
CN104045049A (zh) * 2013-03-12 2014-09-17 北京大学 一种基于硅层转移技术（solt）的高精度加速度计的加工方法
US8884398B2 (en) 2013-04-01 2014-11-11 United Microelectronics Corp. Anti-fuse structure and programming method thereof
US9287173B2 (en) 2013-05-23 2016-03-15 United Microelectronics Corp. Through silicon via and process thereof
US9123730B2 (en) 2013-07-11 2015-09-01 United Microelectronics Corp. Semiconductor device having through silicon trench shielding structure surrounding RF circuit
US9024416B2 (en) 2013-08-12 2015-05-05 United Microelectronics Corp. Semiconductor structure
US8916471B1 (en) 2013-08-26 2014-12-23 United Microelectronics Corp. Method for forming semiconductor structure having through silicon via for signal and shielding structure
US9048223B2 (en) 2013-09-03 2015-06-02 United Microelectronics Corp. Package structure having silicon through vias connected to ground potential
US9117804B2 (en) 2013-09-13 2015-08-25 United Microelectronics Corporation Interposer structure and manufacturing method thereof
US9343359B2 (en) 2013-12-25 2016-05-17 United Microelectronics Corp. Integrated structure and method for fabricating the same
US10340203B2 (en) 2014-02-07 2019-07-02 United Microelectronics Corp. Semiconductor structure with through silicon via and method for fabricating and testing the same
US9755139B2 (en) * 2014-06-30 2017-09-05 Texas Instruments Incorporated Piezoeletric wet etch process with reduced resist lifting and controlled undercut
CN105445495B (zh) * 2014-07-16 2018-11-02 中国科学院地质与地球物理研究所 一种对称的mems加速度敏感芯片及其制造工艺
US10611628B2 (en) * 2016-12-29 2020-04-07 Epack, Inc. MEMS isolation platform with three-dimensional vibration and stress isolation

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Also Published As

Publication number Publication date
JP4267611B2 (ja) 2009-05-27
EP0700580A1 (fr) 1996-03-13
JP2006116693A (ja) 2006-05-11
JP3741723B2 (ja) 2006-02-01
AU2102195A (en) 1995-10-17
CA2159642A1 (fr) 1995-09-29
CA2159642C (fr) 1999-08-17
JPH08511379A (ja) 1996-11-26
WO1995026567A1 (fr) 1995-10-05
US5484073A (en) 1996-01-16
EP0700580A4 (fr) 1998-02-11
DE69531580T2 (de) 2004-07-01
EP0700580B1 (fr) 2003-08-27
DE69531580D1 (de) 2003-10-02

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20070316