DE69531580D1 - Fabrikationsmethode von aufhängungsteilen für mikrogefertigte sensoren - Google Patents
Fabrikationsmethode von aufhängungsteilen für mikrogefertigte sensorenInfo
- Publication number
- DE69531580D1 DE69531580D1 DE69531580T DE69531580T DE69531580D1 DE 69531580 D1 DE69531580 D1 DE 69531580D1 DE 69531580 T DE69531580 T DE 69531580T DE 69531580 T DE69531580 T DE 69531580T DE 69531580 D1 DE69531580 D1 DE 69531580D1
- Authority
- DE
- Germany
- Prior art keywords
- micro
- fabrication method
- hanging parts
- fabricated sensors
- fabricated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/012—Bonding, e.g. electrostatic for strain gauges
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/218,363 US5484073A (en) | 1994-03-28 | 1994-03-28 | Method for fabricating suspension members for micromachined sensors |
US218363 | 1994-03-28 | ||
PCT/US1995/003377 WO1995026567A1 (en) | 1994-03-28 | 1995-03-16 | Method for fabricating suspension members for micromachined sensors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69531580D1 true DE69531580D1 (de) | 2003-10-02 |
DE69531580T2 DE69531580T2 (de) | 2004-07-01 |
Family
ID=22814808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69531580T Expired - Lifetime DE69531580T2 (de) | 1994-03-28 | 1995-03-16 | Fabrikationsmethode von aufhängungsteilen für mikrogefertigte sensoren |
Country Status (8)
Country | Link |
---|---|
US (1) | US5484073A (de) |
EP (1) | EP0700580B1 (de) |
JP (2) | JP3741723B2 (de) |
AU (1) | AU2102195A (de) |
CA (1) | CA2159642C (de) |
DE (1) | DE69531580T2 (de) |
HK (1) | HK1004876A1 (de) |
WO (1) | WO1995026567A1 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5777226A (en) * | 1994-03-28 | 1998-07-07 | I/O Sensors, Inc. | Sensor structure with L-shaped spring legs |
JPH0936385A (ja) * | 1995-07-25 | 1997-02-07 | Nissan Motor Co Ltd | 半導体装置の製造方法 |
DE19539049A1 (de) * | 1995-10-20 | 1997-04-24 | Bosch Gmbh Robert | Verfahren zur Herstellung eines Coriolis-Drehratensensors |
DE19603829A1 (de) * | 1996-02-02 | 1997-08-07 | Daimler Benz Ag | Verfahren zur Herstellung von mikromechanischen Strukturen aus Silizium |
US5971527A (en) * | 1996-10-29 | 1999-10-26 | Xerox Corporation | Ink jet channel wafer for a thermal ink jet printhead |
FR2763745B1 (fr) * | 1997-05-23 | 1999-08-27 | Sextant Avionique | Procede de fabrication d'un micro-capteur en silicium usine |
US6379989B1 (en) * | 1998-12-23 | 2002-04-30 | Xerox Corporation | Process for manufacture of microoptomechanical structures |
US6871544B1 (en) * | 1999-03-17 | 2005-03-29 | Input/Output, Inc. | Sensor design and process |
AU3517600A (en) | 1999-03-17 | 2000-10-04 | Input/Output, Inc. | Calibration of sensors |
EP1096260B1 (de) * | 1999-10-29 | 2005-06-15 | SensoNor asa | Mikromechanischer Sensor |
WO2001098786A1 (en) | 2000-06-21 | 2001-12-27 | Input Output, Inc. | Accelerometer with folded beams |
GB2371119A (en) * | 2000-09-25 | 2002-07-17 | Marconi Caswell Ltd | Micro electro-mechanical systems |
US6479315B1 (en) | 2000-11-27 | 2002-11-12 | Microscan Systems, Inc. | Process for manufacturing micromechanical and microoptomechanical structures with single crystal silicon exposure step |
US6479311B1 (en) | 2000-11-27 | 2002-11-12 | Microscan Systems, Inc. | Process for manufacturing micromechanical and microoptomechanical structures with pre-applied patterning |
US6506620B1 (en) | 2000-11-27 | 2003-01-14 | Microscan Systems Incorporated | Process for manufacturing micromechanical and microoptomechanical structures with backside metalization |
FI113704B (fi) * | 2001-03-21 | 2004-05-31 | Vti Technologies Oy | Menetelmä piianturin valmistamiseksi sekä piianturi |
US6897538B2 (en) * | 2001-08-20 | 2005-05-24 | Honeywell International, Inc. | Micro-machined electromechanical system (MEMS) accelerometer device having arcuately shaped flexures |
US20040240034A1 (en) * | 2001-11-30 | 2004-12-02 | Scharf Bruce R. | Diffraction compensation using a patterned reflector |
US7140250B2 (en) * | 2005-02-18 | 2006-11-28 | Honeywell International Inc. | MEMS teeter-totter accelerometer having reduced non-linearty |
US7687126B2 (en) | 2005-08-22 | 2010-03-30 | 3M Innovative Properties Company | Adhesive articles and release liners |
EP1921042A1 (de) * | 2006-11-10 | 2008-05-14 | ETA SA Manufacture Horlogère Suisse | Herstellung von mikromechanischer mehrschichtiger Bauteile aus Silizium |
CA2826558C (en) * | 2011-02-07 | 2021-01-26 | Ion Geophysical Corporation | Method and apparatus for sensing underwater signals |
US8519515B2 (en) | 2011-04-13 | 2013-08-27 | United Microlectronics Corp. | TSV structure and method for forming the same |
US8481425B2 (en) | 2011-05-16 | 2013-07-09 | United Microelectronics Corp. | Method for fabricating through-silicon via structure |
US8822336B2 (en) | 2011-06-16 | 2014-09-02 | United Microelectronics Corp. | Through-silicon via forming method |
US8828745B2 (en) | 2011-07-06 | 2014-09-09 | United Microelectronics Corp. | Method for manufacturing through-silicon via |
US8518823B2 (en) | 2011-12-23 | 2013-08-27 | United Microelectronics Corp. | Through silicon via and method of forming the same |
US8609529B2 (en) | 2012-02-01 | 2013-12-17 | United Microelectronics Corp. | Fabrication method and structure of through silicon via |
US8691600B2 (en) | 2012-05-02 | 2014-04-08 | United Microelectronics Corp. | Method for testing through-silicon-via (TSV) structures |
US8691688B2 (en) | 2012-06-18 | 2014-04-08 | United Microelectronics Corp. | Method of manufacturing semiconductor structure |
US9275933B2 (en) | 2012-06-19 | 2016-03-01 | United Microelectronics Corp. | Semiconductor device |
US8900996B2 (en) | 2012-06-21 | 2014-12-02 | United Microelectronics Corp. | Through silicon via structure and method of fabricating the same |
US8525296B1 (en) | 2012-06-26 | 2013-09-03 | United Microelectronics Corp. | Capacitor structure and method of forming the same |
US8912844B2 (en) | 2012-10-09 | 2014-12-16 | United Microelectronics Corp. | Semiconductor structure and method for reducing noise therein |
DE102012219660B4 (de) * | 2012-10-26 | 2023-10-12 | Robert Bosch Gmbh | Mechanisches Bauteil |
US9035457B2 (en) | 2012-11-29 | 2015-05-19 | United Microelectronics Corp. | Substrate with integrated passive devices and method of manufacturing the same |
US8716104B1 (en) | 2012-12-20 | 2014-05-06 | United Microelectronics Corp. | Method of fabricating isolation structure |
CN104045049A (zh) * | 2013-03-12 | 2014-09-17 | 北京大学 | 一种基于硅层转移技术(solt)的高精度加速度计的加工方法 |
US8884398B2 (en) | 2013-04-01 | 2014-11-11 | United Microelectronics Corp. | Anti-fuse structure and programming method thereof |
US9287173B2 (en) | 2013-05-23 | 2016-03-15 | United Microelectronics Corp. | Through silicon via and process thereof |
US9123730B2 (en) | 2013-07-11 | 2015-09-01 | United Microelectronics Corp. | Semiconductor device having through silicon trench shielding structure surrounding RF circuit |
US9024416B2 (en) | 2013-08-12 | 2015-05-05 | United Microelectronics Corp. | Semiconductor structure |
US8916471B1 (en) | 2013-08-26 | 2014-12-23 | United Microelectronics Corp. | Method for forming semiconductor structure having through silicon via for signal and shielding structure |
US9048223B2 (en) | 2013-09-03 | 2015-06-02 | United Microelectronics Corp. | Package structure having silicon through vias connected to ground potential |
US9117804B2 (en) | 2013-09-13 | 2015-08-25 | United Microelectronics Corporation | Interposer structure and manufacturing method thereof |
US9343359B2 (en) | 2013-12-25 | 2016-05-17 | United Microelectronics Corp. | Integrated structure and method for fabricating the same |
US10340203B2 (en) | 2014-02-07 | 2019-07-02 | United Microelectronics Corp. | Semiconductor structure with through silicon via and method for fabricating and testing the same |
US9755139B2 (en) * | 2014-06-30 | 2017-09-05 | Texas Instruments Incorporated | Piezoeletric wet etch process with reduced resist lifting and controlled undercut |
CN105445495B (zh) * | 2014-07-16 | 2018-11-02 | 中国科学院地质与地球物理研究所 | 一种对称的mems加速度敏感芯片及其制造工艺 |
US10611628B2 (en) * | 2016-12-29 | 2020-04-07 | Epack, Inc. | MEMS isolation platform with three-dimensional vibration and stress isolation |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4021766A (en) * | 1975-07-28 | 1977-05-03 | Aine Harry E | Solid state pressure transducer of the leaf spring type and batch method of making same |
US4071838A (en) * | 1976-02-09 | 1978-01-31 | Diax Corporation | Solid state force transducer and method of making same |
US4106976A (en) * | 1976-03-08 | 1978-08-15 | International Business Machines Corporation | Ink jet nozzle method of manufacture |
US4144516A (en) * | 1976-03-29 | 1979-03-13 | Aine Harry E | Solid state transducer and method of making same |
US4597003A (en) * | 1983-12-01 | 1986-06-24 | Harry E. Aine | Chemical etching of a semiconductive wafer by undercutting an etch stopped layer |
JPS6197572A (ja) * | 1984-10-19 | 1986-05-16 | Nissan Motor Co Ltd | 半導体加速度センサの製造方法 |
US5000817A (en) * | 1984-10-24 | 1991-03-19 | Aine Harry E | Batch method of making miniature structures assembled in wafer form |
US4732647A (en) * | 1984-10-24 | 1988-03-22 | Aine Harry E | Batch method of making miniature capacitive force transducers assembled in wafer form |
US4679434A (en) * | 1985-07-25 | 1987-07-14 | Litton Systems, Inc. | Integrated force balanced accelerometer |
US4670092A (en) * | 1986-04-18 | 1987-06-02 | Rockwell International Corporation | Method of fabricating a cantilever beam for a monolithic accelerometer |
US4922756A (en) * | 1988-06-20 | 1990-05-08 | Triton Technologies, Inc. | Micro-machined accelerometer |
JPS6376483A (ja) * | 1986-09-19 | 1988-04-06 | Fujitsu Ltd | 半導体加速度センサの製造方法 |
US4805456A (en) * | 1987-05-19 | 1989-02-21 | Massachusetts Institute Of Technology | Resonant accelerometer |
US5195371A (en) * | 1988-01-13 | 1993-03-23 | The Charles Stark Draper Laboratory, Inc. | Semiconductor chip transducer |
JPH01301181A (ja) * | 1988-05-30 | 1989-12-05 | Mitsubishi Electric Corp | 半導体加速度センサの製造方法 |
JPH02218172A (ja) * | 1989-02-18 | 1990-08-30 | Nippondenso Co Ltd | 半導体加速度センサの製造方法 |
US5006487A (en) * | 1989-07-27 | 1991-04-09 | Honeywell Inc. | Method of making an electrostatic silicon accelerometer |
US5233213A (en) * | 1990-07-14 | 1993-08-03 | Robert Bosch Gmbh | Silicon-mass angular acceleration sensor |
JP2586359B2 (ja) * | 1990-12-17 | 1997-02-26 | 日本電気株式会社 | 半導体加速度センサおよびその製造方法 |
JPH05142247A (ja) * | 1991-11-20 | 1993-06-08 | Hitachi Ltd | 半導体加速度センサ |
-
1994
- 1994-03-28 US US08/218,363 patent/US5484073A/en not_active Expired - Lifetime
-
1995
- 1995-03-16 AU AU21021/95A patent/AU2102195A/en not_active Abandoned
- 1995-03-16 WO PCT/US1995/003377 patent/WO1995026567A1/en active IP Right Grant
- 1995-03-16 JP JP52519695A patent/JP3741723B2/ja not_active Expired - Fee Related
- 1995-03-16 DE DE69531580T patent/DE69531580T2/de not_active Expired - Lifetime
- 1995-03-16 CA CA002159642A patent/CA2159642C/en not_active Expired - Lifetime
- 1995-03-16 EP EP95913752A patent/EP0700580B1/de not_active Expired - Lifetime
-
1998
- 1998-05-11 HK HK98104043A patent/HK1004876A1/xx not_active IP Right Cessation
-
2005
- 2005-09-20 JP JP2005271996A patent/JP4267611B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0700580B1 (de) | 2003-08-27 |
AU2102195A (en) | 1995-10-17 |
JP2006116693A (ja) | 2006-05-11 |
EP0700580A4 (de) | 1998-02-11 |
HK1004876A1 (en) | 1998-12-11 |
JP3741723B2 (ja) | 2006-02-01 |
DE69531580T2 (de) | 2004-07-01 |
WO1995026567A1 (en) | 1995-10-05 |
EP0700580A1 (de) | 1996-03-13 |
US5484073A (en) | 1996-01-16 |
CA2159642C (en) | 1999-08-17 |
JPH08511379A (ja) | 1996-11-26 |
CA2159642A1 (en) | 1995-09-29 |
JP4267611B2 (ja) | 2009-05-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |