HK1001908A1 - Ablative etch resistant coating for laser personalization of integrated circuits - Google Patents

Ablative etch resistant coating for laser personalization of integrated circuits

Info

Publication number
HK1001908A1
HK1001908A1 HK98100999A HK98100999A HK1001908A1 HK 1001908 A1 HK1001908 A1 HK 1001908A1 HK 98100999 A HK98100999 A HK 98100999A HK 98100999 A HK98100999 A HK 98100999A HK 1001908 A1 HK1001908 A1 HK 1001908A1
Authority
HK
Hong Kong
Prior art keywords
integrated circuits
resistant coating
etch resistant
laser personalization
ablative
Prior art date
Application number
HK98100999A
Other languages
English (en)
Inventor
Meir Israel Janal
Zvi Orbach
Original Assignee
Quick Tech Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from IL8079086A external-priority patent/IL80790A/en
Priority claimed from IL81850A external-priority patent/IL81850A0/xx
Application filed by Quick Tech Ltd filed Critical Quick Tech Ltd
Publication of HK1001908A1 publication Critical patent/HK1001908A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
HK98100999A 1986-11-26 1998-02-10 Ablative etch resistant coating for laser personalization of integrated circuits HK1001908A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IL8079086A IL80790A (en) 1986-11-26 1986-11-26 Ablative etch resistant coating for laser personalization of integrated circuits
IL81850A IL81850A0 (en) 1987-03-10 1987-03-10 Ablative etch resistant coating for laser personalization of integrated circuits

Publications (1)

Publication Number Publication Date
HK1001908A1 true HK1001908A1 (en) 1998-07-17

Family

ID=26321619

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98100999A HK1001908A1 (en) 1986-11-26 1998-02-10 Ablative etch resistant coating for laser personalization of integrated circuits

Country Status (4)

Country Link
EP (1) EP0272799B1 (xx)
JP (1) JP2708440B2 (xx)
DE (1) DE3784149T2 (xx)
HK (1) HK1001908A1 (xx)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5236551A (en) * 1990-05-10 1993-08-17 Microelectronics And Computer Technology Corporation Rework of polymeric dielectric electrical interconnect by laser photoablation
US5196376A (en) * 1991-03-01 1993-03-23 Polycon Corporation Laser lithography for integrated circuit and integrated circuit interconnect manufacture
WO1993018545A1 (en) * 1992-03-10 1993-09-16 Lasa Industries Inc. Method of laser etching of silicon dioxide
US5374590A (en) * 1993-04-28 1994-12-20 International Business Machines Corporation Fabrication and laser deletion of microfuses
US5922624A (en) * 1993-05-13 1999-07-13 Imec Vzw Method for semiconductor processing using mixtures of HF and carboxylic acid
US5518956A (en) * 1993-09-02 1996-05-21 General Electric Company Method of isolating vertical shorts in an electronic array using laser ablation
US6025256A (en) * 1997-01-06 2000-02-15 Electro Scientific Industries, Inc. Laser based method and system for integrated circuit repair or reconfiguration

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5694738A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Manufacturing method of semiconductor device
US4414059A (en) * 1982-12-09 1983-11-08 International Business Machines Corporation Far UV patterning of resist materials
US4628588A (en) * 1984-06-25 1986-12-16 Texas Instruments Incorporated Molybdenum-metal mask for definition and etch of oxide-encapsulated metal gate
JPS61119062A (ja) * 1984-11-15 1986-06-06 Nec Corp 金属配線パタ−ンの形成方法
GB2170649A (en) * 1985-01-18 1986-08-06 Intel Corp Sputtered silicon as an anti-reflective coating for metal layer lithography

Also Published As

Publication number Publication date
EP0272799A1 (en) 1988-06-29
JPH01125937A (ja) 1989-05-18
DE3784149T2 (de) 1993-06-03
DE3784149D1 (de) 1993-03-25
JP2708440B2 (ja) 1998-02-04
EP0272799B1 (en) 1993-02-10

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)