HK1001176A1 - Integrated semiconductor memory with redundancy arrangement - Google Patents

Integrated semiconductor memory with redundancy arrangement Download PDF

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Publication number
HK1001176A1
HK1001176A1 HK98100230A HK98100230A HK1001176A1 HK 1001176 A1 HK1001176 A1 HK 1001176A1 HK 98100230 A HK98100230 A HK 98100230A HK 98100230 A HK98100230 A HK 98100230A HK 1001176 A1 HK1001176 A1 HK 1001176A1
Authority
HK
Hong Kong
Prior art keywords
redundancy
word line
block
main memory
memory area
Prior art date
Application number
HK98100230A
Other languages
German (de)
English (en)
French (fr)
Chinese (zh)
Other versions
HK1001176B (en
Inventor
Stecker Johannes
Rieger Johann
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of HK1001176A1 publication Critical patent/HK1001176A1/xx
Publication of HK1001176B publication Critical patent/HK1001176B/xx

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/806—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout by reducing size of decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
HK98100230.3A 1992-04-16 Integrated semiconductor memory with redundancy arrangement HK1001176B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DE1992/000316 WO1993021578A1 (de) 1992-04-16 1992-04-16 Integrierter halbleiterspeicher mit redundanzeinrichtung

Publications (2)

Publication Number Publication Date
HK1001176A1 true HK1001176A1 (en) 1998-05-29
HK1001176B HK1001176B (en) 1998-05-29

Family

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Also Published As

Publication number Publication date
US5459690A (en) 1995-10-17
DE59205881D1 (de) 1996-05-02
EP0636258A1 (de) 1995-02-01
KR950701125A (ko) 1995-02-20
WO1993021578A1 (de) 1993-10-28
JP3129440B2 (ja) 2001-01-29
KR100248165B1 (ko) 2000-03-15
JPH07502361A (ja) 1995-03-09
EP0636258B1 (de) 1996-03-27
TW223685B (cs) 1994-05-11

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)