HK1000948A1 - Overvoltage protective circuit for mos components - Google Patents

Overvoltage protective circuit for mos components

Info

Publication number
HK1000948A1
HK1000948A1 HK97102500A HK97102500A HK1000948A1 HK 1000948 A1 HK1000948 A1 HK 1000948A1 HK 97102500 A HK97102500 A HK 97102500A HK 97102500 A HK97102500 A HK 97102500A HK 1000948 A1 HK1000948 A1 HK 1000948A1
Authority
HK
Hong Kong
Prior art keywords
protective circuit
punch
mos components
overvoltage protective
oxide transistor
Prior art date
Application number
HK97102500A
Other languages
English (en)
Inventor
Hartmud Terletzki
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of HK1000948A1 publication Critical patent/HK1000948A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Amplifiers (AREA)
HK97102500A 1989-06-02 1997-12-18 Overvoltage protective circuit for mos components HK1000948A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3918090A DE3918090A1 (de) 1989-06-02 1989-06-02 Schutzschaltung gegen ueberspannungen fuer mos-bauelemente
PCT/DE1990/000240 WO1990015440A1 (fr) 1989-06-02 1990-03-22 Circuit de protection contre les surtensions pour composants mos

Publications (1)

Publication Number Publication Date
HK1000948A1 true HK1000948A1 (en) 1998-05-08

Family

ID=6381977

Family Applications (1)

Application Number Title Priority Date Filing Date
HK97102500A HK1000948A1 (en) 1989-06-02 1997-12-18 Overvoltage protective circuit for mos components

Country Status (7)

Country Link
EP (1) EP0474637B1 (fr)
JP (1) JP2925315B2 (fr)
KR (1) KR0177507B1 (fr)
AT (1) ATE156936T1 (fr)
DE (2) DE3918090A1 (fr)
HK (1) HK1000948A1 (fr)
WO (1) WO1990015440A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272371A (en) * 1991-11-19 1993-12-21 Sgs-Thomson Microelectronics, Inc. Electrostatic discharge protection structure
EP0623958B1 (fr) * 1993-05-04 1998-04-01 Siemens Aktiengesellschaft Circuit intégré semi-conducteur comprenant des moyens de protection

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4734752A (en) * 1985-09-27 1988-03-29 Advanced Micro Devices, Inc. Electrostatic discharge protection device for CMOS integrated circuit outputs

Also Published As

Publication number Publication date
KR920700477A (ko) 1992-02-19
WO1990015440A1 (fr) 1990-12-13
ATE156936T1 (de) 1997-08-15
DE3918090A1 (de) 1990-12-06
EP0474637A1 (fr) 1992-03-18
DE59010753D1 (de) 1997-09-18
JPH04505686A (ja) 1992-10-01
EP0474637B1 (fr) 1997-08-13
JP2925315B2 (ja) 1999-07-28
KR0177507B1 (en) 1999-03-20

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)