GR3019492T3 - Process for self-cleaning of a reactor chamber - Google Patents

Process for self-cleaning of a reactor chamber

Info

Publication number
GR3019492T3
GR3019492T3 GR960400880T GR960400880T GR3019492T3 GR 3019492 T3 GR3019492 T3 GR 3019492T3 GR 960400880 T GR960400880 T GR 960400880T GR 960400880 T GR960400880 T GR 960400880T GR 3019492 T3 GR3019492 T3 GR 3019492T3
Authority
GR
Greece
Prior art keywords
cleaning
chamber
reactor chamber
self
exhaust system
Prior art date
Application number
GR960400880T
Other languages
English (en)
Inventor
Kam Shing Law
Cissy Leung
Ching Cheong Tang
Kenneth Stuart Collins
Mei Chang
Jerry Yuen Kui Wong
David Nin-Kou Wang
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22074449&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=GR3019492(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of GR3019492T3 publication Critical patent/GR3019492T3/el

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Catalysts (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
GR960400880T 1987-06-26 1996-04-02 Process for self-cleaning of a reactor chamber GR3019492T3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6721087A 1987-06-26 1987-06-26

Publications (1)

Publication Number Publication Date
GR3019492T3 true GR3019492T3 (en) 1996-07-31

Family

ID=22074449

Family Applications (1)

Application Number Title Priority Date Filing Date
GR960400880T GR3019492T3 (en) 1987-06-26 1996-04-02 Process for self-cleaning of a reactor chamber

Country Status (6)

Country Link
EP (1) EP0296891B1 (el)
JP (1) JP2618445B2 (el)
AT (1) ATE133006T1 (el)
DE (1) DE3854875T2 (el)
ES (1) ES2081806T3 (el)
GR (1) GR3019492T3 (el)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
DD274830A1 (de) * 1988-08-12 1990-01-03 Elektromat Veb Vorrichtung zur gasphasenbearbeitung von scheibenfoermigen werkstuecken
JPH02185977A (ja) * 1989-01-12 1990-07-20 Sanyo Electric Co Ltd 膜形成用真空装置
JP2708533B2 (ja) * 1989-03-14 1998-02-04 富士通株式会社 Ｃｖｄ装置の残留ガス除去方法
JPH0375373A (ja) * 1989-08-18 1991-03-29 Fujitsu Ltd プラズマ処理装置の清浄化方法
EP0416400B1 (en) * 1989-08-25 1996-02-07 Applied Materials, Inc. Cleaning method for semiconductor wafer processing apparatus
US5207836A (en) * 1989-08-25 1993-05-04 Applied Materials, Inc. Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus
JP3004696B2 (ja) * 1989-08-25 2000-01-31 アプライド マテリアルズ インコーポレーテッド 化学的蒸着装置の洗浄方法
JPH03130368A (ja) * 1989-09-22 1991-06-04 Applied Materials Inc 半導体ウェーハプロセス装置の洗浄方法
EP0441368B1 (en) * 1990-02-09 1996-05-08 Applied Materials, Inc. Method and device for removing excess material from a sputtering chamber
EP0464696B1 (en) * 1990-06-29 1997-10-29 Applied Materials, Inc. Two-step reactor chamber self cleaning process
US5304405A (en) * 1991-01-11 1994-04-19 Anelva Corporation Thin film deposition method and apparatus
US5273588A (en) * 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
US5370739A (en) * 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
DE4220827A1 (de) * 1992-06-25 1994-01-13 Pokorny Gmbh Anlage zur Behandlung von Objekten unter Reinluftraum-Bedingungen
US5449410A (en) * 1993-07-28 1995-09-12 Applied Materials, Inc. Plasma processing apparatus
US6047713A (en) * 1994-02-03 2000-04-11 Applied Materials, Inc. Method for cleaning a throttle valve
US6274058B1 (en) * 1997-07-11 2001-08-14 Applied Materials, Inc. Remote plasma cleaning method for processing chambers
US6110556A (en) * 1997-10-17 2000-08-29 Applied Materials, Inc. Lid assembly for a process chamber employing asymmetric flow geometries
US6450117B1 (en) * 2000-08-07 2002-09-17 Applied Materials, Inc. Directing a flow of gas in a substrate processing chamber
JP4236882B2 (ja) * 2001-08-01 2009-03-11 東京エレクトロン株式会社 ガス処理装置およびガス処理方法
US8282768B1 (en) 2005-04-26 2012-10-09 Novellus Systems, Inc. Purging of porogen from UV cure chamber
US8398816B1 (en) 2006-03-28 2013-03-19 Novellus Systems, Inc. Method and apparatuses for reducing porogen accumulation from a UV-cure chamber
US20080083701A1 (en) * 2006-10-04 2008-04-10 Mks Instruments, Inc. Oxygen conditioning of plasma vessels
US20120312234A1 (en) * 2011-06-11 2012-12-13 Tokyo Electron Limited Process gas diffuser assembly for vapor deposition system
JP6014829B2 (ja) * 2012-05-28 2016-10-26 株式会社渡辺商行 気化器
US9028765B2 (en) 2013-08-23 2015-05-12 Lam Research Corporation Exhaust flow spreading baffle-riser to optimize remote plasma window clean
US20190348261A1 (en) * 2018-05-09 2019-11-14 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4138306A (en) * 1976-08-31 1979-02-06 Tokyo Shibaura Electric Co., Ltd. Apparatus for the treatment of semiconductors
JPS5358490A (en) * 1976-11-05 1978-05-26 Mitsubishi Electric Corp Forming method for film
FR2397067A1 (fr) * 1977-07-06 1979-02-02 Commissariat Energie Atomique Dispositif d'injection de gaz pour gravure ou depot reactifs sous decharge luminescente
JPS57201016A (en) * 1981-06-05 1982-12-09 Oki Electric Ind Co Ltd Cleaning method for semiconductor manufacturing apparatus
JPS59142839A (ja) * 1983-02-01 1984-08-16 Canon Inc 気相法装置のクリ−ニング方法
US4576698A (en) * 1983-06-30 1986-03-18 International Business Machines Corporation Plasma etch cleaning in low pressure chemical vapor deposition systems
JPS6061722U (ja) * 1983-09-30 1985-04-30 株式会社島津製作所 成膜装置
US4534816A (en) * 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
US4657616A (en) * 1985-05-17 1987-04-14 Benzing Technologies, Inc. In-situ CVD chamber cleaner
JPS61235578A (ja) * 1986-01-06 1986-10-20 Semiconductor Energy Lab Co Ltd 反応炉内を清浄にする方法
WO1987007309A1 (en) * 1986-05-19 1987-12-03 Novellus Systems, Inc. Deposition apparatus with automatic cleaning means and method of use
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
DE3752042T2 (de) * 1986-12-19 1997-07-17 Applied Materials Inc Plasmaätzvorrichtung mit Magnetfeldverstärkung

Also Published As

Publication number Publication date
EP0296891A3 (en) 1990-05-30
ATE133006T1 (de) 1996-01-15
ES2081806T3 (es) 1996-03-16
EP0296891A2 (en) 1988-12-28
EP0296891B1 (en) 1996-01-10
JP2618445B2 (ja) 1997-06-11
JPS6487773A (en) 1989-03-31
DE3854875D1 (de) 1996-02-22
DE3854875T2 (de) 1996-05-23

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