GR3004073T3 - - Google Patents

Info

Publication number
GR3004073T3
GR3004073T3 GR920400471T GR920400471T GR3004073T3 GR 3004073 T3 GR3004073 T3 GR 3004073T3 GR 920400471 T GR920400471 T GR 920400471T GR 920400471 T GR920400471 T GR 920400471T GR 3004073 T3 GR3004073 T3 GR 3004073T3
Authority
GR
Greece
Prior art keywords
membrane
positional
mechanical
arches
deflects
Prior art date
Application number
GR920400471T
Other languages
Greek (el)
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GR3004073T3 publication Critical patent/GR3004073T3/el

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/04—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using capacitive elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measuring Fluid Pressure (AREA)
  • Credit Cards Or The Like (AREA)
  • Signal Processing For Digital Recording And Reproducing (AREA)
GR920400471T 1986-09-10 1992-03-18 GR3004073T3 (US20020130353A1-20020919-M00001.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH3647/86A CH670914A5 (US20020130353A1-20020919-M00001.png) 1986-09-10 1986-09-10

Publications (1)

Publication Number Publication Date
GR3004073T3 true GR3004073T3 (US20020130353A1-20020919-M00001.png) 1993-03-31

Family

ID=4260485

Family Applications (1)

Application Number Title Priority Date Filing Date
GR920400471T GR3004073T3 (US20020130353A1-20020919-M00001.png) 1986-09-10 1992-03-18

Country Status (8)

Country Link
US (1) US4979149A (US20020130353A1-20020919-M00001.png)
EP (1) EP0259614B1 (US20020130353A1-20020919-M00001.png)
JP (1) JPS6373554A (US20020130353A1-20020919-M00001.png)
AT (1) ATE72075T1 (US20020130353A1-20020919-M00001.png)
CH (1) CH670914A5 (US20020130353A1-20020919-M00001.png)
DE (1) DE3776237D1 (US20020130353A1-20020919-M00001.png)
GR (1) GR3004073T3 (US20020130353A1-20020919-M00001.png)
NO (1) NO873761L (US20020130353A1-20020919-M00001.png)

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5538753A (en) * 1991-10-14 1996-07-23 Landis & Gyr Betriebs Ag Security element
EP0537439B2 (de) * 1991-10-14 2003-07-09 OVD Kinegram AG Sicherheitselement
GB9309327D0 (en) * 1993-05-06 1993-06-23 Smith Charles G Bi-stable memory element
US6100109A (en) * 1994-11-02 2000-08-08 Siemens Aktiengesellschaft Method for producing a memory device
ATE209818T1 (de) * 1995-08-09 2001-12-15 Infineon Technologies Ag Speichervorrichtung und herstellungsverfahren
US5638946A (en) * 1996-01-11 1997-06-17 Northeastern University Micromechanical switch with insulated switch contact
US6168395B1 (en) 1996-02-10 2001-01-02 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Bistable microactuator with coupled membranes
US6237590B1 (en) 1997-09-18 2001-05-29 Delsys Pharmaceutical Corporation Dry powder delivery system apparatus
US6188301B1 (en) * 1998-11-13 2001-02-13 General Electric Company Switching structure and method of fabrication
KR100611240B1 (ko) * 1998-12-22 2006-08-10 코닌클리케 필립스 일렉트로닉스 엔.브이. 이전에 인가된 전극 전압에 의존하는 전극 전압을 갖는 광 유도부를 포함하는 디스플레이 장치
US6211580B1 (en) * 1998-12-29 2001-04-03 Honeywell International Inc. Twin configuration for increased life time in touch mode electrostatic actuators
US6054745A (en) * 1999-01-04 2000-04-25 International Business Machines Corporation Nonvolatile memory cell using microelectromechanical device
JP2002539624A (ja) * 1999-03-18 2002-11-19 キャベンディッシュ・キネティックス・リミテッド フレキシブル要素を有するフラッシュメモリ素子、フラッシュメモリデバイスおよび情報電荷蓄積方法
JP2003504857A (ja) * 1999-07-02 2003-02-04 プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ ナノスコピックワイヤを用いる装置、アレイおよびその製造方法
JP2001102597A (ja) 1999-09-30 2001-04-13 Fuji Electric Co Ltd 半導体構造およびその製造方法
US6716657B1 (en) * 2000-05-26 2004-04-06 Agere Systems Inc Method for interconnecting arrays of micromechanical devices
US6473361B1 (en) 2000-11-10 2002-10-29 Xerox Corporation Electromechanical memory cell
US7566478B2 (en) 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7563711B1 (en) * 2001-07-25 2009-07-21 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
US6574130B2 (en) * 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6924538B2 (en) 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US7259410B2 (en) * 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6911682B2 (en) * 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US7176505B2 (en) * 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
ATE308062T1 (de) * 2002-03-26 2005-11-15 Koninkl Philips Electronics Nv Anzeigevorrichtung mit einer lichtdurchlässigen platte und einem lichtabsorbierenden mittel
US7335395B2 (en) 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
JP4186727B2 (ja) * 2002-07-26 2008-11-26 松下電器産業株式会社 スイッチ
CN100490044C (zh) * 2002-07-26 2009-05-20 松下电器产业株式会社 开关
US6972881B1 (en) 2002-11-21 2005-12-06 Nuelight Corp. Micro-electro-mechanical switch (MEMS) display panel with on-glass column multiplexers using MEMS as mux elements
US7560136B2 (en) 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
FR2852441A1 (fr) * 2003-03-14 2004-09-17 St Microelectronics Sa Dispositif de memoire
WO2005019793A2 (en) 2003-05-14 2005-03-03 Nantero, Inc. Sensor platform using a horizontally oriented nanotube element
US7199498B2 (en) 2003-06-02 2007-04-03 Ambient Systems, Inc. Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same
US7274064B2 (en) 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US7112493B2 (en) * 2003-06-09 2006-09-26 Nantero, Inc. Method of making non-volatile field effect devices and arrays of same
FR2858459B1 (fr) * 2003-08-01 2006-03-10 Commissariat Energie Atomique Commutateur micro-mecanique bistable, methode d'actionnement et procede de realisation correspondant
WO2005084164A2 (en) * 2003-08-13 2005-09-15 Nantero, Inc. Nanotube-based switching elements and logic circuits
US7115960B2 (en) * 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
JP2007502545A (ja) 2003-08-13 2007-02-08 ナンテロ，インク． 複数の制御装置を有するナノチューブを基礎とする交換エレメントと上記エレメントから製造される回路
US7289357B2 (en) * 2003-08-13 2007-10-30 Nantero, Inc. Isolation structure for deflectable nanotube elements
WO2005017967A2 (en) * 2003-08-13 2005-02-24 Nantero, Inc. Nanotube device structure and methods of fabrication
US7416993B2 (en) * 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
US7215229B2 (en) * 2003-09-17 2007-05-08 Schneider Electric Industries Sas Laminated relays with multiple flexible contacts
JP4626142B2 (ja) * 2003-11-18 2011-02-02 株式会社日立製作所 装置およびそれを用いたデータ処理方法
US7528437B2 (en) * 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
EP1751765A4 (en) * 2004-05-24 2009-05-20 Univ Boston CONTROLLABLE NANOCHEMICAL MEMORY ELEMENT
US7709880B2 (en) * 2004-06-09 2010-05-04 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
US7161403B2 (en) * 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US7288970B2 (en) 2004-06-18 2007-10-30 Nantero, Inc. Integrated nanotube and field effect switching device
US7164744B2 (en) 2004-06-18 2007-01-16 Nantero, Inc. Nanotube-based logic driver circuits
US7167026B2 (en) * 2004-06-18 2007-01-23 Nantero, Inc. Tri-state circuit using nanotube switching elements
US7329931B2 (en) 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and transistors
US7330709B2 (en) * 2004-06-18 2008-02-12 Nantero, Inc. Receiver circuit using nanotube-based switches and logic
EP1805869A2 (en) * 2004-07-19 2007-07-11 Ambient Systems, Inc. Nanometer-scale electrostatic and electromagnetic motors and generators
WO2006121461A2 (en) 2004-09-16 2006-11-16 Nantero, Inc. Light emitters using nanotubes and methods of making same
ATE463034T1 (de) 2004-09-22 2010-04-15 Nantero Inc Direktzugriffsspeicher mit nanoröhrenschaltelementen
WO2006040726A1 (en) * 2004-10-15 2006-04-20 Koninklijke Philips Electronics N.V. Method of operating a rfid system
US7046539B1 (en) 2004-11-02 2006-05-16 Sandia Corporation Mechanical memory
US8362525B2 (en) 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same
US7598544B2 (en) * 2005-01-14 2009-10-06 Nanotero, Inc. Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
US7579618B2 (en) 2005-03-02 2009-08-25 Northrop Grumman Corporation Carbon nanotube resonator transistor and method of making same
US8217490B2 (en) 2005-05-09 2012-07-10 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7394687B2 (en) * 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
US7835170B2 (en) 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8513768B2 (en) 2005-05-09 2013-08-20 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7781862B2 (en) 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US7782650B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9196615B2 (en) 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8013363B2 (en) * 2005-05-09 2011-09-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
TWI324773B (en) 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
US7928521B1 (en) 2005-05-31 2011-04-19 Nantero, Inc. Non-tensioned carbon nanotube switch design and process for making same
US7915122B2 (en) * 2005-06-08 2011-03-29 Nantero, Inc. Self-aligned cell integration scheme
JP5054936B2 (ja) * 2005-06-22 2012-10-24 パナソニック株式会社 電気機械メモリ、それを用いた電気回路及び電気機械メモリの駆動方法
US7349236B2 (en) * 2005-06-24 2008-03-25 Xerox Corporation Electromechanical memory cell with torsional movement
US7538040B2 (en) * 2005-06-30 2009-05-26 Nantero, Inc. Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
GB0515980D0 (en) * 2005-08-03 2005-09-07 Cavendish Kinetics Ltd Memory cell for a circuit and method of operation therefor
CN101287698A (zh) 2005-09-06 2008-10-15 诺华丝国际股份有限公司 含有甲硫氨酸的羟基类似物以及衍生物的罐装和干法涂布的抗微生物组合物
WO2007038558A2 (en) * 2005-09-27 2007-04-05 Cornell Research Foundation, Inc. Shape memory device
GB0525025D0 (en) * 2005-12-08 2006-01-18 Cavendish Kinetics Ltd memory Cell and Array
US7336527B1 (en) 2005-12-14 2008-02-26 International Business Machines Corporation Electromechanical storage device
KR100827705B1 (ko) * 2006-10-23 2008-05-07 삼성전자주식회사 비 휘발성 메모리 소자 및 그의 제조방법
KR100834829B1 (ko) * 2006-12-19 2008-06-03 삼성전자주식회사 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법
FR2910706B1 (fr) * 2006-12-21 2009-03-20 Commissariat Energie Atomique Element d'interconnexion a base de nanotubes de carbone
US8385113B2 (en) 2007-04-03 2013-02-26 Cjp Ip Holdings, Ltd. Nanoelectromechanical systems and methods for making the same
US8031514B2 (en) * 2007-04-09 2011-10-04 Northeastern University Bistable nanoswitch
JP5026144B2 (ja) * 2007-05-18 2012-09-12 日本電信電話株式会社 記憶素子
TWI461350B (zh) * 2007-05-22 2014-11-21 Nantero Inc 使用奈米結構物之三極管及其製造方法
WO2009002748A1 (en) * 2007-06-22 2008-12-31 Nantero, Inc. Two-terminal nanotube devices including a nanotube bridge and methods of making same
US8704314B2 (en) 2007-12-06 2014-04-22 Massachusetts Institute Of Technology Mechanical memory transistor
US9263126B1 (en) 2010-09-01 2016-02-16 Nantero Inc. Method for dynamically accessing and programming resistive change element arrays
US8253171B1 (en) 2009-08-27 2012-08-28 Lockheed Martin Corporation Two terminal nanotube switch, memory array incorporating the same and method of making
US20130113810A1 (en) * 2011-11-04 2013-05-09 Qualcomm Mems Technologies, Inc. Sidewall spacers along conductive lines
ITTO20120224A1 (it) 2012-03-15 2013-09-16 St Microelectronics Srl Elemento di memoria elettromeccanico integrato e memoria elettronica comprendente il medesimo
KR101928344B1 (ko) * 2012-10-24 2018-12-13 삼성전자주식회사 나노 공진 장치 및 방법
FR3085786B1 (fr) * 2018-09-11 2021-02-19 Commissariat Energie Atomique Cellule de memorisation en logique capacitive

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4087810A (en) * 1976-06-30 1978-05-02 International Business Machines Corporation Membrane deformographic display, and method of making
FR2376549A1 (fr) * 1977-01-04 1978-07-28 Thomson Csf Systeme bistable a electrets
US4113360A (en) * 1977-03-28 1978-09-12 Siemens Aktiengesellschaft Indicating device for illustrating symbols of all kinds
US4229732A (en) * 1978-12-11 1980-10-21 International Business Machines Corporation Micromechanical display logic and array
EP0046873A1 (en) * 1980-09-02 1982-03-10 Texas Instruments Incorporated Deformable mirror light modulator
US4441791A (en) * 1980-09-02 1984-04-10 Texas Instruments Incorporated Deformable mirror light modulator
US4356730A (en) * 1981-01-08 1982-11-02 International Business Machines Corporation Electrostatically deformographic switches
US4543457A (en) * 1984-01-25 1985-09-24 Transensory Devices, Inc. Microminiature force-sensitive switch
US4704707A (en) * 1984-08-21 1987-11-03 Bos-Knox, Ltd. Electrostatic random access memory
US4736202A (en) * 1984-08-21 1988-04-05 Bos-Knox, Ltd. Electrostatic binary switching and memory devices
US4570139A (en) * 1984-12-14 1986-02-11 Eaton Corporation Thin-film magnetically operated micromechanical electric switching device
WO1986003879A1 (en) * 1984-12-19 1986-07-03 Simpson George R Electrostatic binary switching and memory devices

Also Published As

Publication number Publication date
NO873761D0 (no) 1987-09-09
CH670914A5 (US20020130353A1-20020919-M00001.png) 1989-07-14
DE3776237D1 (de) 1992-03-05
US4979149A (en) 1990-12-18
NO873761L (no) 1988-03-11
ATE72075T1 (de) 1992-02-15
EP0259614B1 (de) 1992-01-22
JPS6373554A (ja) 1988-04-04
EP0259614A1 (de) 1988-03-16

Similar Documents

Publication Publication Date Title
GR3004073T3 (US20020130353A1-20020919-M00001.png)
SG83626A1 (en) Piezoelectric/electrostrictive actuator having at least one piezoelectric/electrostrictive film
EP0649008A3 (en) Zirconia membrane structure, method of manufacturing it, and piezoelectric / electrostrictive thin layer comprising this structure.
SE9103183L (sv) Virus-antikroppskomplex
DK1121382T3 (da) Interferon-beta-fusionsproteiner og deres anvendelser
AU6619198A (en) Modular data medium
DE69420695D1 (de) Normalleitender Ablenkelektromagnet
NO885255L (no) Flytende, elektrostatisk fremkaller og fremgangsmaate for dens fremstilling.
DK1137489T3 (da) Væskedispensering og dispenseringsfremgangsmåder
JPS6473781A (en) Electrostrictive driving device
IT8800524V0 (it) Soletta in p.v.c. con sottofondo piatto e con la parte superiore formata da rilievi di forme varie (cilindrici o semisferici) vuoti
EP0831359A3 (en) Liquid crystal devices comprising a multitude of domains having different threshold voltages for switching liquid crystals
KR890010740A (ko) 메모리 카드용 전자 부품 지지부 및 그것을 이용한 메모리 카드
DE3587375D1 (de) Schaltung zur zwischenspeicherung von bilddaten.
TW355750B (en) Optical component structure and its manufacturing
EP0223181A3 (en) Cam operated multi-contact electrical connector
ES8702084A1 (es) Caja de empalme para encapsular un substrato
IT1264516B1 (it) Cellule dendritiche immortalizzate
DE68921446D1 (de) Stabilisierung von ausgefällten Dispersionen von hydrophoben Kupplern.
EP0674192A3 (en) Integration of free-space planar optical instruments
DE3850641T2 (de) Struktur zur Versiegelung eines elektrostriktiven Elements.
IT1210556B (it) Attuatore per l'azionamento di valvole di intercettazione.
WO2002082480A1 (fr) Dispositif electronique ceramique et procede de fabrication de ce dispositif
FR2706403B1 (fr) Servomoteur à soufflet poreux formant filtre.
SE8800284D0 (sv) Ytbeleggningsprodukt