GB9921987D0 - Ferroelectric capacitor and method of manufacture - Google Patents

Ferroelectric capacitor and method of manufacture

Info

Publication number
GB9921987D0
GB9921987D0 GBGB9921987.5A GB9921987A GB9921987D0 GB 9921987 D0 GB9921987 D0 GB 9921987D0 GB 9921987 A GB9921987 A GB 9921987A GB 9921987 D0 GB9921987 D0 GB 9921987D0
Authority
GB
United Kingdom
Prior art keywords
manufacture
ferroelectric capacitor
ferroelectric
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9921987.5A
Other versions
GB2341726A (en
GB2341726B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of GB9921987D0 publication Critical patent/GB9921987D0/en
Publication of GB2341726A publication Critical patent/GB2341726A/en
Application granted granted Critical
Publication of GB2341726B publication Critical patent/GB2341726B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0084—Producing gradient compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
GB9921987A 1998-09-16 1999-09-16 Ferroelectric capacitor and method of manufacture Expired - Fee Related GB2341726B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26173798A JP3159255B2 (en) 1998-09-16 1998-09-16 Sputter growth method for electrodes used in ferroelectric capacitors

Publications (3)

Publication Number Publication Date
GB9921987D0 true GB9921987D0 (en) 1999-11-17
GB2341726A GB2341726A (en) 2000-03-22
GB2341726B GB2341726B (en) 2000-11-08

Family

ID=17366020

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9921987A Expired - Fee Related GB2341726B (en) 1998-09-16 1999-09-16 Ferroelectric capacitor and method of manufacture

Country Status (3)

Country Link
US (1) US6146906A (en)
JP (1) JP3159255B2 (en)
GB (1) GB2341726B (en)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100309644B1 (en) * 1999-08-23 2001-11-01 김영환 A method for fabricating capacitor
TW452642B (en) * 1999-09-07 2001-09-01 Furukawa Electric Co Ltd Wick, plate type heat pipe and container
US20020197793A1 (en) * 2000-01-06 2002-12-26 Dornfest Charles N Low thermal budget metal oxide deposition for capacitor structures
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
JP2001284551A (en) * 2000-04-04 2001-10-12 Mitsubishi Electric Corp Producing method for semiconductor device
KR20010109610A (en) * 2000-05-31 2001-12-12 박종섭 A method for forming ferroelectric capacitor in semiconductor device
JP3907921B2 (en) * 2000-06-19 2007-04-18 富士通株式会社 Manufacturing method of semiconductor device
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
AU2001261811A1 (en) * 2000-06-30 2002-01-14 Motorola, Inc. Hybrid semiconductor structure and device
US6427066B1 (en) 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
US6410941B1 (en) 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
US6477285B1 (en) 2000-06-30 2002-11-05 Motorola, Inc. Integrated circuits with optical signal propagation
AU2001264985A1 (en) * 2000-07-17 2002-01-30 Motorola, Inc. Apparatus for handling optical communication signals and method of manufacture therefor
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6563118B2 (en) 2000-12-08 2003-05-13 Motorola, Inc. Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6586260B2 (en) * 2001-03-28 2003-07-01 Sharp Laboratories Of America, Inc. Single c-axis PGO thin film electrodes having good surface smoothness and uniformity and methods for making the same
JP3661850B2 (en) 2001-04-25 2005-06-22 富士通株式会社 Semiconductor device and manufacturing method thereof
US6781179B2 (en) * 2001-05-30 2004-08-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a capacitor comprising an electrode with an iridium oxide film as an oxygen barrier film
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
JP4428500B2 (en) * 2001-07-13 2010-03-10 富士通マイクロエレクトロニクス株式会社 Capacitor element and manufacturing method thereof
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6472694B1 (en) 2001-07-23 2002-10-29 Motorola, Inc. Microprocessor structure having a compound semiconductor layer
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6585424B2 (en) 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6594414B2 (en) 2001-07-25 2003-07-15 Motorola, Inc. Structure and method of fabrication for an optical switch
US6462360B1 (en) 2001-08-06 2002-10-08 Motorola, Inc. Integrated gallium arsenide communications systems
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030071327A1 (en) * 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US20030124324A1 (en) * 2001-11-27 2003-07-03 Kappler Safety Group Breathable blood and viral barrier fabric
US6635497B2 (en) * 2001-12-21 2003-10-21 Texas Instruments Incorporated Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing
US6528328B1 (en) * 2001-12-21 2003-03-04 Texas Instruments Incorporated Methods of preventing reduction of irox during PZT formation by metalorganic chemical vapor deposition or other processing
US6686236B2 (en) * 2001-12-21 2004-02-03 Texas Instruments Incorporated Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing
KR100467318B1 (en) 2002-06-04 2005-01-24 한국전자통신연구원 microelectromechanical device using resistive electromechanical contact
US20040145002A1 (en) * 2002-11-13 2004-07-29 Chin-Lin Liu Method of fabricating a ferroelectric capacitor and a ferroelectric capacitor produced by the method
JP2004179586A (en) * 2002-11-29 2004-06-24 Renesas Technology Corp Manufacturing method for flash memory device
DE10303316A1 (en) * 2003-01-28 2004-08-12 Forschungszentrum Jülich GmbH Fast retentive memory
US7270884B2 (en) * 2003-04-07 2007-09-18 Infineon Technologies Ag Adhesion layer for Pt on SiO2
JP4493001B2 (en) * 2003-10-31 2010-06-30 株式会社フルヤ金属 Transparent electrode and manufacturing method thereof
US20050230725A1 (en) * 2004-04-20 2005-10-20 Texas Instruments Incorporated Ferroelectric capacitor having an oxide electrode template and a method of manufacture therefor
JP2006073648A (en) 2004-08-31 2006-03-16 Fujitsu Ltd Semiconductor device and its manufacturing method
US20060073613A1 (en) * 2004-09-29 2006-04-06 Sanjeev Aggarwal Ferroelectric memory cells and methods for fabricating ferroelectric memory cells and ferroelectric capacitors thereof
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007266429A (en) * 2006-03-29 2007-10-11 Fujitsu Ltd Semiconductor device and method of manufacturing
KR100755373B1 (en) * 2006-09-15 2007-09-04 삼성전자주식회사 Contact structure having conductive oxide, ferroelectric random access memory device employing the same and methods of fabricating the same
JP4805775B2 (en) * 2006-09-21 2011-11-02 Ｏｋｉセミコンダクタ株式会社 Iridium oxide film manufacturing method, electrode manufacturing method, dielectric capacitor manufacturing method, and semiconductor device manufacturing method
JP2008124330A (en) 2006-11-14 2008-05-29 Fujitsu Ltd Method for fabricating semiconductor device
JP5109341B2 (en) 2006-11-14 2012-12-26 富士通セミコンダクター株式会社 Semiconductor device and manufacturing method thereof
JP2008135620A (en) * 2006-11-29 2008-06-12 Seiko Epson Corp Manufacturing method of ferroelectric memory device
JP5104850B2 (en) * 2007-02-28 2012-12-19 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
WO2008105100A1 (en) 2007-02-28 2008-09-04 Fujitsu Limited Semiconductor device and process for manufacturing the same
JP5092461B2 (en) * 2007-03-09 2012-12-05 富士通セミコンダクター株式会社 Semiconductor device and manufacturing method thereof
WO2008114423A1 (en) 2007-03-20 2008-09-25 Fujitsu Microelectronics Limited Semiconductor device and process for producing the same
WO2008152719A1 (en) 2007-06-14 2008-12-18 Fujitsu Microelectronics Limited Process for producing semiconductor device and semiconductor device
JP5211558B2 (en) 2007-06-18 2013-06-12 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
JP5510769B2 (en) * 2007-08-24 2014-06-04 日立金属株式会社 Method for forming Cu-based wiring film
JP4549401B2 (en) * 2008-03-11 2010-09-22 富士通株式会社 Manufacturing method of resistance memory element
JP5347381B2 (en) 2008-08-28 2013-11-20 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
JP5407775B2 (en) * 2009-03-31 2014-02-05 Ｔｄｋ株式会社 Thin film capacitor manufacturing method and thin film capacitor
WO2012036103A1 (en) * 2010-09-15 2012-03-22 Ricoh Company, Ltd. Electromechanical transducing device and manufacturing method thereof, and liquid droplet discharging head and liquid droplet discharging apparatus
JP5360161B2 (en) * 2011-08-17 2013-12-04 富士通セミコンダクター株式会社 Semiconductor device and manufacturing method thereof
JP2013103086A (en) * 2011-11-16 2013-05-30 Mtg:Kk Beauty instrument
US10297497B2 (en) * 2017-01-19 2019-05-21 Texas Instruments Incorporated Sacrificial layer for platinum patterning
JP7268487B2 (en) * 2019-06-03 2023-05-08 コニカミノルタ株式会社 Thin-film piezoelectric element and manufacturing method thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5414588A (en) * 1993-09-20 1995-05-09 The Regents Of The University Of California High performance capacitors using nano-structure multilayer materials fabrication
JP3461398B2 (en) * 1994-01-13 2003-10-27 ローム株式会社 Dielectric capacitor and method of manufacturing the same
JP3247023B2 (en) * 1994-01-13 2002-01-15 ローム株式会社 Dielectric capacitor, non-volatile memory and method of manufacturing the same
JPH0967193A (en) * 1995-08-31 1997-03-11 Sumitomo Metal Mining Co Ltd Production of thin ferroelectric film
JPH09116111A (en) * 1995-10-23 1997-05-02 Olympus Optical Co Ltd Semiconductor device
JPH09148535A (en) * 1995-11-22 1997-06-06 Sanyo Electric Co Ltd Semiconductor storage device
US5790366A (en) * 1996-12-06 1998-08-04 Sharp Kabushiki Kaisha High temperature electrode-barriers for ferroelectric and other capacitor structures
US6025205A (en) * 1997-01-07 2000-02-15 Tong Yang Cement Corporation Apparatus and methods of forming preferred orientation-controlled platinum films using nitrogen
US6054331A (en) * 1997-01-15 2000-04-25 Tong Yang Cement Corporation Apparatus and methods of depositing a platinum film with anti-oxidizing function over a substrate
US6498097B1 (en) * 1997-05-06 2002-12-24 Tong Yang Cement Corporation Apparatus and method of forming preferred orientation-controlled platinum film using oxygen

Also Published As

Publication number Publication date
JP2000091270A (en) 2000-03-31
US6146906A (en) 2000-11-14
JP3159255B2 (en) 2001-04-23
GB2341726A (en) 2000-03-22
GB2341726B (en) 2000-11-08

Similar Documents

Publication Publication Date Title
GB2341726B (en) Ferroelectric capacitor and method of manufacture
SG87822A1 (en) Solid electrolytic capacitor and method of manufacturing the same
IL119907A (en) Ferroelectric capacitor structure and its manufacture
GB2339962B (en) Cylindrical capacitor and a method of fabrication thereof
AP2000001783A0 (en) Disinfectant and method of making
HUP9904208A3 (en) Method for production of conducting element and conducting element
GB9929560D0 (en) Insert and method of manufacture thereof
EP1147847A4 (en) Method of manufacturing structural body and structural body
SG95683A1 (en) Solid electrolytic capacitor and method of manufacturing same
PL332314A1 (en) Crystalline povoxyl cephditorene and method of obtaining same
EP0940856A4 (en) Ferroelectric memory element and method of producing the same
EP0982742A4 (en) Module and method of manufacture
GB2345125B (en) Intumescent downlighter cover and method of manufacturing same
EP0758788A4 (en) Solid electrolytic capacitor and its manufacturing method
EP1100136A4 (en) Cell and method of producing the same
EP0860883A4 (en) Transistor and method of manufacturing the same
EP1043742A4 (en) Electrolytic capacitor and method of manufacturing it
AU6270799A (en) Firestarter and method of making same
AU2773399A (en) Improved oscillator circuit and method of forming same
GB2342227B (en) Method of manufacturing ferroelectric memory device
GB2310318B (en) Ferroelectric component and method of manufacture
AU3731499A (en) Waste treatment bag and method of manufacturing the same
AU8064798A (en) Capacitor and method of making
GB2341271B (en) Method of fabricating capacitor
AU2001281470A1 (en) Capacitor and manufacturing method of capacitor

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20150916