AU2001261811A1 - Hybrid semiconductor structure and device - Google Patents

Hybrid semiconductor structure and device

Info

Publication number
AU2001261811A1
AU2001261811A1 AU2001261811A AU6181101A AU2001261811A1 AU 2001261811 A1 AU2001261811 A1 AU 2001261811A1 AU 2001261811 A AU2001261811 A AU 2001261811A AU 6181101 A AU6181101 A AU 6181101A AU 2001261811 A1 AU2001261811 A1 AU 2001261811A1
Authority
AU
Australia
Prior art keywords
semiconductor structure
hybrid semiconductor
hybrid
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001261811A
Inventor
Gary F. Kaatz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2001261811A1 publication Critical patent/AU2001261811A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
AU2001261811A 2000-06-30 2001-05-21 Hybrid semiconductor structure and device Abandoned AU2001261811A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US60907100A 2000-06-30 2000-06-30
US09609071 2000-06-30
PCT/US2001/016733 WO2002003471A1 (en) 2000-06-30 2001-05-21 Hybrid semiconductor structure and device

Publications (1)

Publication Number Publication Date
AU2001261811A1 true AU2001261811A1 (en) 2002-01-14

Family

ID=24439241

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001261811A Abandoned AU2001261811A1 (en) 2000-06-30 2001-05-21 Hybrid semiconductor structure and device

Country Status (2)

Country Link
AU (1) AU2001261811A1 (en)
WO (1) WO2002003471A1 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4421007A1 (en) * 1994-06-18 1995-12-21 Philips Patentverwaltung Electronic component and method for its production
WO1998007167A2 (en) * 1996-08-12 1998-02-19 Energenius, Inc. Semiconductor supercapacitor system, method for making same and articles produced therefrom
JP3159255B2 (en) * 1998-09-16 2001-04-23 日本電気株式会社 Sputter growth method for electrodes used in ferroelectric capacitors

Also Published As

Publication number Publication date
WO2002003471A1 (en) 2002-01-10

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