GB969892A - Improvements in semiconductor devices - Google Patents

Improvements in semiconductor devices

Info

Publication number
GB969892A
GB969892A GB13356/60A GB1335660A GB969892A GB 969892 A GB969892 A GB 969892A GB 13356/60 A GB13356/60 A GB 13356/60A GB 1335660 A GB1335660 A GB 1335660A GB 969892 A GB969892 A GB 969892A
Authority
GB
United Kingdom
Prior art keywords
parts
envelope
bead
wafer
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13356/60A
Inventor
David Boswell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASSOCIATED SEMICONDUCTOR MFT
Original Assignee
ASSOCIATED SEMICONDUCTOR MFT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASSOCIATED SEMICONDUCTOR MFT filed Critical ASSOCIATED SEMICONDUCTOR MFT
Priority to GB13356/60A priority Critical patent/GB969892A/en
Publication of GB969892A publication Critical patent/GB969892A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)

Abstract

969,892. Semi-conductor devices. ASSOCIATED SEMICONDUCTOR MANUFACTURERS Ltd. Jan. 24, 1961 [April 14, 1960], No. 13356/60. Heading H1K. The envelope of a junction-type diode or transistor comprises one metal part which supports the semi-conductor body of the device and another metal part which has an inwardly extending tubular portion, the end of which is inserted into a metal contact on one side of the body and is in good heat-conducting relationship with the contact, the envelope parts being mechanically connected but electrically insulated from one another. In the diode shown in Fig. 1, a solder washer 3, an n-type Ge wafer 2, and an In bead 1 are placed in that order on a metal member 4, and heated to alloy the In to the Ge, thus forming a PN junction, and to solder the wafer to the member 4, to which a mounting stud 5 may be attached. A subassembly comprising a cap 7 having an integral inturned frusto-conical portion 7a, and a further envelope part 6 fixed to and insulated from cap 7 by a glass or ceramic ring 8, is positioned as shown, the sharpened and pre-tinned end of portion 7a being forced into In bead 1, and parts 4, 6 being flange-welded together in a controlled atmosphere. The In near portion 7a is heated to form a seal, which may be protected by a filling 9 of resin &c. The metal envelope parts, which are preferably made of Cu, may be finned to improve cooling; as shown, parts F from virtual fins. The transistor shown in Fig. 2 comprises a second In bead 11 on the opposite side of the wafer from bead 1, which forms a collector electrode attached to member 4 as by solder 12, and another metal envelope part 16 insulatedly attached to member 4 by glass or ceramic 18, and flange-welded to part 6. A base electrode 14 comprising a Ni mounting spider, the arms of which are supported between parts 6, 16 is ohmically joined to wafer 2 by solder washer 3.
GB13356/60A 1960-04-14 1960-04-14 Improvements in semiconductor devices Expired GB969892A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB13356/60A GB969892A (en) 1960-04-14 1960-04-14 Improvements in semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB13356/60A GB969892A (en) 1960-04-14 1960-04-14 Improvements in semiconductor devices

Publications (1)

Publication Number Publication Date
GB969892A true GB969892A (en) 1964-09-16

Family

ID=10021471

Family Applications (1)

Application Number Title Priority Date Filing Date
GB13356/60A Expired GB969892A (en) 1960-04-14 1960-04-14 Improvements in semiconductor devices

Country Status (1)

Country Link
GB (1) GB969892A (en)

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