GB966811A - Improvements in or relating to the preparation of crystalline semi-conductors - Google Patents
Improvements in or relating to the preparation of crystalline semi-conductorsInfo
- Publication number
- GB966811A GB966811A GB21148/62A GB2114862A GB966811A GB 966811 A GB966811 A GB 966811A GB 21148/62 A GB21148/62 A GB 21148/62A GB 2114862 A GB2114862 A GB 2114862A GB 966811 A GB966811 A GB 966811A
- Authority
- GB
- United Kingdom
- Prior art keywords
- temperature
- mixture
- vessel
- gas
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000000151 deposition Methods 0.000 abstract 8
- 239000007789 gas Substances 0.000 abstract 8
- 239000000203 mixture Substances 0.000 abstract 8
- 230000008021 deposition Effects 0.000 abstract 6
- 238000000034 method Methods 0.000 abstract 6
- 239000013078 crystal Substances 0.000 abstract 4
- 239000012495 reaction gas Substances 0.000 abstract 4
- 229910006162 GeI2 Inorganic materials 0.000 abstract 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000007323 disproportionation reaction Methods 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 229910052740 iodine Inorganic materials 0.000 abstract 2
- 239000011630 iodine Substances 0.000 abstract 2
- 239000011541 reaction mixture Substances 0.000 abstract 2
- 230000008929 regeneration Effects 0.000 abstract 2
- 238000011069 regeneration method Methods 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- 229910006149 GeI4 Inorganic materials 0.000 abstract 1
- 229910004480 SiI4 Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- IAGYEMVJHPEPGE-UHFFFAOYSA-N diiodogermanium Chemical compound I[Ge]I IAGYEMVJHPEPGE-UHFFFAOYSA-N 0.000 abstract 1
- RNRZLEZABHZRSX-UHFFFAOYSA-N diiodosilicon Chemical compound I[Si]I RNRZLEZABHZRSX-UHFFFAOYSA-N 0.000 abstract 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- CUDGTZJYMWAJFV-UHFFFAOYSA-N tetraiodogermane Chemical compound I[Ge](I)(I)I CUDGTZJYMWAJFV-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES74176A DE1204197B (de) | 1961-06-02 | 1961-06-02 | Verfahren zum Herstellen kristalliner, insbesondere einkristalliner Schichten aus Germanium oder Silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB966811A true GB966811A (en) | 1964-08-19 |
Family
ID=7504469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB21148/62A Expired GB966811A (en) | 1961-06-02 | 1962-06-01 | Improvements in or relating to the preparation of crystalline semi-conductors |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE618408A (enrdf_load_stackoverflow) |
| CH (1) | CH439233A (enrdf_load_stackoverflow) |
| DE (1) | DE1204197B (enrdf_load_stackoverflow) |
| GB (1) | GB966811A (enrdf_load_stackoverflow) |
| NL (1) | NL278620A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1288163A3 (en) * | 2001-08-28 | 2010-08-04 | Midwest Research Institute | Purified silicon production system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE509317A (enrdf_load_stackoverflow) * | 1951-03-07 | 1900-01-01 |
-
0
- NL NL278620D patent/NL278620A/xx unknown
-
1961
- 1961-06-02 DE DES74176A patent/DE1204197B/de active Pending
-
1962
- 1962-02-15 CH CH185662A patent/CH439233A/de unknown
- 1962-06-01 GB GB21148/62A patent/GB966811A/en not_active Expired
- 1962-06-01 BE BE618408A patent/BE618408A/fr unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1288163A3 (en) * | 2001-08-28 | 2010-08-04 | Midwest Research Institute | Purified silicon production system |
Also Published As
| Publication number | Publication date |
|---|---|
| NL278620A (enrdf_load_stackoverflow) | 1900-01-01 |
| CH439233A (de) | 1967-07-15 |
| BE618408A (fr) | 1962-12-03 |
| DE1204197B (de) | 1965-11-04 |
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