BE618408A - Procédé de préparation de couches cristallines et en particulier monocristallines d'un élément semi-conducteur du groupe IV de la classification péridique - Google Patents

Procédé de préparation de couches cristallines et en particulier monocristallines d'un élément semi-conducteur du groupe IV de la classification péridique

Info

Publication number
BE618408A
BE618408A BE618408A BE618408A BE618408A BE 618408 A BE618408 A BE 618408A BE 618408 A BE618408 A BE 618408A BE 618408 A BE618408 A BE 618408A BE 618408 A BE618408 A BE 618408A
Authority
BE
Belgium
Prior art keywords
peridic
classification
crystalline
preparation
group
Prior art date
Application number
BE618408A
Other languages
English (en)
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE618408A publication Critical patent/BE618408A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
BE618408A 1961-06-02 1962-06-01 Procédé de préparation de couches cristallines et en particulier monocristallines d'un élément semi-conducteur du groupe IV de la classification péridique BE618408A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES74176A DE1204197B (de) 1961-06-02 1961-06-02 Verfahren zum Herstellen kristalliner, insbesondere einkristalliner Schichten aus Germanium oder Silicium

Publications (1)

Publication Number Publication Date
BE618408A true BE618408A (fr) 1962-12-03

Family

ID=7504469

Family Applications (1)

Application Number Title Priority Date Filing Date
BE618408A BE618408A (fr) 1961-06-02 1962-06-01 Procédé de préparation de couches cristallines et en particulier monocristallines d'un élément semi-conducteur du groupe IV de la classification péridique

Country Status (5)

Country Link
BE (1) BE618408A (enrdf_load_stackoverflow)
CH (1) CH439233A (enrdf_load_stackoverflow)
DE (1) DE1204197B (enrdf_load_stackoverflow)
GB (1) GB966811A (enrdf_load_stackoverflow)
NL (1) NL278620A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6468886B2 (en) * 1999-06-15 2002-10-22 Midwest Research Institute Purification and deposition of silicon by an iodide disproportionation reaction

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (enrdf_load_stackoverflow) * 1951-03-07 1900-01-01

Also Published As

Publication number Publication date
DE1204197B (de) 1965-11-04
CH439233A (de) 1967-07-15
NL278620A (enrdf_load_stackoverflow) 1900-01-01
GB966811A (en) 1964-08-19

Similar Documents

Publication Publication Date Title
FR1234419A (fr) Préparation d'urée
CH402189A (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
FR1229415A (fr) Circuits supraconducteurs et procédés de fabrication de ces derniers
BE618408A (fr) Procédé de préparation de couches cristallines et en particulier monocristallines d'un élément semi-conducteur du groupe IV de la classification péridique
MY6600006A (en) Method of manufacturing double-loop stitched slide fasteners
BE576212A (fr) Procédé pour la préparation d'alcools cycliques et d'esters de ces derniers.
CA537909A (en) Method of producing junctions in semi-conductors
FR1224252A (fr) Procédé et dispositif pour la fabrication d'articles chaussants
FR1202524A (fr) Procédé de préparation d'alcools et de diols
AU270812B2 (en) IMPROVEMENTS IN OR RELATING TO METHODS OF X'v MANUFACTURING SEMICONDUCTOR DEVICES
AU2183262A (en) IMPROVEMENTS IN OR RELATING TO METHODS OF X'v MANUFACTURING SEMICONDUCTOR DEVICES
FR1418764A (fr) Procédé de fabrication d'éléments semi-conducteurs à couches épitaxiales et dispositifs correspondants
FR1272974A (fr) Procédé de préparation d'acétate de méthyl-3-butène-3-ol-1 et de diacétate d'isoprène-glycol
CH388075A (fr) Procédé de fabrication d'écrous déformables à autoblocage
FR1307108A (fr) Procédé pour fabriquer des couches semi-conductrices monocristallines
FR1295067A (fr) Procédé et appareil pour la fabrication d'articles rembourrés
AU263838B2 (en) Improvements in or relating to methods of manufacturing semiconductor bodies having a p-n-type junction
CA597035A (en) Method for producing junctions in semiconductor device
FR1474937A (fr) Perfectionnements aux circuits intégrés formés d'éléments en couches minces et d'éléments semi-conducteurs massifs, et procédé pour la fabrication de ces circuits intégrés
CH422997A (de) Halbleitervorrichtung mit einem mit Elektroden versehenen Halbleiterkörper aus Cadmiumtellurid und Verfahren zu deren Herstellung
FR1202400A (fr) Perfectionnements à la préparation du tellurure de bismuth
FR1247336A (fr) Procédé pour la préparation d'alcools cycliques et d'esters de ces derniers
CA538256A (en) Infant's bathing device
CA557638A (en) P-n junction semiconductor units and method of making the same
BE613546A (fr) Procédé de fabrication d'éléments superconducteurs