GB965289A - Diffused junction type silicon rectifier units - Google Patents
Diffused junction type silicon rectifier unitsInfo
- Publication number
- GB965289A GB965289A GB3325861A GB3325861A GB965289A GB 965289 A GB965289 A GB 965289A GB 3325861 A GB3325861 A GB 3325861A GB 3325861 A GB3325861 A GB 3325861A GB 965289 A GB965289 A GB 965289A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- silicon rectifier
- diffused junction
- type silicon
- junction type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052710 silicon Inorganic materials 0.000 title abstract 4
- 239000010703 silicon Substances 0.000 title abstract 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- LWUVWAREOOAHDW-UHFFFAOYSA-N lead silver Chemical compound [Ag].[Pb] LWUVWAREOOAHDW-UHFFFAOYSA-N 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 230000008646 thermal stress Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3810660 | 1960-09-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB965289A true GB965289A (en) | 1964-07-29 |
Family
ID=12516204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3325861A Expired GB965289A (en) | 1960-09-16 | 1961-09-15 | Diffused junction type silicon rectifier units |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1218621B (de) |
GB (1) | GB965289A (de) |
NL (1) | NL269308A (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3319136A (en) * | 1964-09-08 | 1967-05-09 | Dunlee Corp | Rectifier |
US3995310A (en) * | 1974-12-23 | 1976-11-30 | General Electric Company | Semiconductor assembly including mounting plate with recessed periphery |
GB2251725A (en) * | 1990-12-19 | 1992-07-15 | Fuji Electric Co Ltd | Soldered electrodes for semiconducter chips |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4425389B4 (de) * | 1994-07-19 | 2007-12-27 | Robert Bosch Gmbh | Gleichrichteranordnung sowie Verfahren zur Herstellung einer elektrisch und thermisch leitenden Verbindung und Anordnung zur Durchführung des Verfahrens |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2863105A (en) * | 1955-11-10 | 1958-12-02 | Hoffman Electronics Corp | Rectifying device |
-
0
- NL NL269308D patent/NL269308A/xx unknown
-
1961
- 1961-09-15 GB GB3325861A patent/GB965289A/en not_active Expired
- 1961-09-15 DE DET20772A patent/DE1218621B/de active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3319136A (en) * | 1964-09-08 | 1967-05-09 | Dunlee Corp | Rectifier |
US3995310A (en) * | 1974-12-23 | 1976-11-30 | General Electric Company | Semiconductor assembly including mounting plate with recessed periphery |
GB2251725A (en) * | 1990-12-19 | 1992-07-15 | Fuji Electric Co Ltd | Soldered electrodes for semiconducter chips |
DE4142066A1 (de) * | 1990-12-19 | 1992-07-30 | Fuji Electric Co Ltd | Elektrodenaufbau eines halbleiterelementes |
US5381038A (en) * | 1990-12-19 | 1995-01-10 | Fuji Electric Co., Ltd. | Semiconductor device having passivation protrusions defining electrical bonding area |
GB2251725B (en) * | 1990-12-19 | 1995-01-25 | Fuji Electric Co Ltd | Semiconductor element including an electrode construction |
Also Published As
Publication number | Publication date |
---|---|
NL269308A (de) | |
DE1218621B (de) | 1966-06-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1029171A (en) | A semiconductor arrangement | |
GB795478A (en) | Improvements in or relating to the production of semi-conductor elements | |
GB836370A (en) | Improvements in high current rectifier | |
ES8605126A1 (es) | Perfeccionamientos en los sistemas supresores de sobretensiones y metodo de fabricacion correspondiente | |
GB1191890A (en) | Semiconductor Controlled Rectifier Devices | |
GB871307A (en) | Transistor with double collector | |
GB768103A (en) | Improvements in or relating to semiconductor devices | |
GB965289A (en) | Diffused junction type silicon rectifier units | |
GB1002725A (en) | Semiconductor device | |
GB970895A (en) | Semi-conductor arrangements enclosed in housings | |
GB896717A (en) | Semiconductor diode | |
GB914839A (en) | A semi-conductor arrangement | |
GB1177031A (en) | Pressure Assembled Semiconductor Device using Massive Flexibly Mounted Terminals | |
GB855382A (en) | Method of producing a p-n junction in a crystalline semiconductor | |
GB820252A (en) | Semiconductor device | |
GB1088139A (en) | High current rectifier | |
GB1063210A (en) | Method of producing semiconductor devices | |
GB922836A (en) | Diffused-junction type silicon rectifier units | |
GB983623A (en) | Improvements relating to semi-conductor devices | |
GB1007952A (en) | Improvements in and relating to semi-conductor devices | |
GB864121A (en) | Improvements in or relating to semi-conductor devices | |
GB1052862A (de) | ||
GB1037358A (en) | Improvements in or relating to rectifiers | |
GB903476A (en) | Electrical semiconductor device | |
GB895326A (en) | Improvements in or relating to semiconductor devices |