GB922836A - Diffused-junction type silicon rectifier units - Google Patents

Diffused-junction type silicon rectifier units

Info

Publication number
GB922836A
GB922836A GB3357861A GB3357861A GB922836A GB 922836 A GB922836 A GB 922836A GB 3357861 A GB3357861 A GB 3357861A GB 3357861 A GB3357861 A GB 3357861A GB 922836 A GB922836 A GB 922836A
Authority
GB
United Kingdom
Prior art keywords
diffused
type silicon
diameter
wafer
junction type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3357861A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB922836A publication Critical patent/GB922836A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

922,836. Semi-conductor rectifiers. TOKYO SHIBAURA ELECTRIC CO. Ltd. Sept. 19, 1961 [Jan. 25, 1961], No. 33578/61. Drawings to Specification. Class 37. A rectifier unit comprises a diffused-junction type silicon wafer having opposite faces of diameter not less than five millimetres, and copper electrodes soldered to the opposite faces of the wafer and each having a thickness equal to at least one-sixth of the diameter of said silicon wafer and a diameter at least equal to that of the wafer. In the embodiment described, Figs. 1-4 and 6 (not shown), boron and phosphorus respectively are diffused into opposite sides of an N-type silicon sheet to form a junction layer therein. The sheet is then plated first with nickel and then with gold before being cut into discs to which copper electrodes are subsequently attached with silver containing lead solder. Threaded bores may be provided in the electrodes.
GB3357861A 1961-01-25 1961-09-19 Diffused-junction type silicon rectifier units Expired GB922836A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP238161 1961-01-25

Publications (1)

Publication Number Publication Date
GB922836A true GB922836A (en) 1963-04-03

Family

ID=11527644

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3357861A Expired GB922836A (en) 1961-01-25 1961-09-19 Diffused-junction type silicon rectifier units

Country Status (2)

Country Link
GB (1) GB922836A (en)
NL (1) NL269854A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3319136A (en) * 1964-09-08 1967-05-09 Dunlee Corp Rectifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3319136A (en) * 1964-09-08 1967-05-09 Dunlee Corp Rectifier

Also Published As

Publication number Publication date
NL269854A (en)

Similar Documents

Publication Publication Date Title
GB1161049A (en) Field-effect semiconductor devices.
GB795478A (en) Improvements in or relating to the production of semi-conductor elements
GB838167A (en) Electrical semiconductor device
GB1337283A (en) Method of manufacturing a semiconductor device
GB935710A (en) Improvements in controlled semiconductor rectifiers
GB970896A (en) Improvements in or relating to semi-conductor arrangements enclosed in housings
GB922836A (en) Diffused-junction type silicon rectifier units
GB1079382A (en) Heat sink structure and method of making the same
GB1484218A (en) Semiconductor rectifiers
GB965289A (en) Diffused junction type silicon rectifier units
GB1088139A (en) High current rectifier
ES337005A1 (en) A method of making passivated semiconductor devices
GB1063210A (en) Method of producing semiconductor devices
GB1098760A (en) Method of making semiconductor device
GB1042435A (en) Semiconductor devices
GB1208030A (en) A semiconductor device
GB1084028A (en) A method of soldering a semiconductor chip to a backing plate
GB916379A (en) Improvements in and relating to semiconductor junction units
GB1024633A (en) Semiconductor components
GB1288902A (en)
GB1285996A (en) Magnetodiodes
GB1148268A (en) Alloyed ohmic contacts in semiconductor material
GB1014990A (en) Improvements in or relating to methods of and apparatus for manufacturing semiconductor devices
GB1087688A (en) Improved method of semiconductor die soldering
GB903476A (en) Electrical semiconductor device