GB1285996A - Magnetodiodes - Google Patents
MagnetodiodesInfo
- Publication number
- GB1285996A GB1285996A GB06013/69A GB1601369A GB1285996A GB 1285996 A GB1285996 A GB 1285996A GB 06013/69 A GB06013/69 A GB 06013/69A GB 1601369 A GB1601369 A GB 1601369A GB 1285996 A GB1285996 A GB 1285996A
- Authority
- GB
- United Kingdom
- Prior art keywords
- face
- recombination centres
- diffusing
- copper
- contacts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000006798 recombination Effects 0.000 abstract 3
- 238000005215 recombination Methods 0.000 abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000011888 foil Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
Abstract
1285996 Semi-conductor devices JOSEPH LUCAS (INDUSTRIES) Ltd 13 Feb 1970 [27 March 1969] 16013/69 Heading H1K A magnetodiode, i.e. a diode in which conduction in the forward direction is low but can be varied substantially by a magnetic field, is formed by diffusing two separated regions of opposite conductivity types into one face of a high resistivity silicon substrate, and diffusing a layer of recombination centres into the other face. The recombination centres may be of gold or copper, the dopants of boron and phosphorus, and aluminium electrodes form contacts to the diffused regions. The contacts may be sintered following deposition, and the recombination centres "driven in" simultaneously. A pair of diodes with a common region may be produced, and may be used as a balanced half-bridge element. The device may be adhesively secured to a foil of copper, nickel or stainless steel at the other face.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB06013/69A GB1285996A (en) | 1969-03-27 | 1969-03-27 | Magnetodiodes |
| FR7011533A FR2035947A1 (en) | 1969-03-27 | 1970-03-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB06013/69A GB1285996A (en) | 1969-03-27 | 1969-03-27 | Magnetodiodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1285996A true GB1285996A (en) | 1972-08-16 |
Family
ID=10069610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB06013/69A Expired GB1285996A (en) | 1969-03-27 | 1969-03-27 | Magnetodiodes |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR2035947A1 (en) |
| GB (1) | GB1285996A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4017884A (en) * | 1973-08-13 | 1977-04-12 | Siemens Aktiengesellschaft | Magnetic field sensitive diode and method of making same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH656746A5 (en) * | 1982-06-15 | 1986-07-15 | Landis & Gyr Ag | MAGNETIC SENSOR. |
-
1969
- 1969-03-27 GB GB06013/69A patent/GB1285996A/en not_active Expired
-
1970
- 1970-03-20 FR FR7011533A patent/FR2035947A1/fr not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4017884A (en) * | 1973-08-13 | 1977-04-12 | Siemens Aktiengesellschaft | Magnetic field sensitive diode and method of making same |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2035947A1 (en) | 1970-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |