GB1399644A - Bidirectional thyristor - Google Patents

Bidirectional thyristor

Info

Publication number
GB1399644A
GB1399644A GB4662572A GB4662572A GB1399644A GB 1399644 A GB1399644 A GB 1399644A GB 4662572 A GB4662572 A GB 4662572A GB 4662572 A GB4662572 A GB 4662572A GB 1399644 A GB1399644 A GB 1399644A
Authority
GB
United Kingdom
Prior art keywords
wafer
oct
thyristors
thyristor
housing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4662572A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1399644A publication Critical patent/GB1399644A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Prostheses (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)

Abstract

1399644 Thyristors RCA CORPORATION 10 Oct 1972 [22 Oct 1971] 46625/72 Heading H1K Each surface of an n-type semi-conductor wafer 42 has two mutually isolated np structures, preferably in the form of rectangular mesas as shown. The structure constitutes two side-by-side oppositely-poled thyristors and is used with adjacent main electrodes 62, 63 and 64, 66 strapped together to provide a triac which is rendered conductive in both directions by light shone on to the common base region 48 or by an electrical signal applied to a gate electrode (found in other embodiments) which may be provided on any one of regions 48, 50 and 51. A sealed housing is described (Fig. 4 not shown) within which the thyristor wafer is mounted on a metallized alumina disc in proximity to a beryllia disc bearing two lightemitting pn diodes used for triggering. Within the housing the space between the semiconductor elements and immediately surrounding them is filled with a light transparent silicone resin. The thyristor wafer is passivated with transparent glass 60.
GB4662572A 1971-10-22 1972-10-10 Bidirectional thyristor Expired GB1399644A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19164371A 1971-10-22 1971-10-22

Publications (1)

Publication Number Publication Date
GB1399644A true GB1399644A (en) 1975-07-02

Family

ID=22706315

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4662572A Expired GB1399644A (en) 1971-10-22 1972-10-10 Bidirectional thyristor

Country Status (8)

Country Link
JP (1) JPS4851592A (en)
BE (1) BE790415A (en)
CA (1) CA972076A (en)
DE (1) DE2251251A1 (en)
FR (1) FR2156819B1 (en)
GB (1) GB1399644A (en)
IT (1) IT964378B (en)
NL (1) NL7214234A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5036377A (en) * 1988-08-03 1991-07-30 Texas Instruments Incorporated Triac array

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2336802A1 (en) * 1975-12-24 1977-07-22 Silec Semi Conducteurs Triac with high speed voltage change during switching - has grooves formed on conductive surfaces filled with insulating material to prevent lateral current flow
FR2359508A1 (en) * 1976-07-19 1978-02-17 Silec Semi Conducteurs Semiconductor diode with protective substance - which is onto lower surface of trench in PN slice and prevents adhesion of metal

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3468729A (en) * 1966-03-21 1969-09-23 Westinghouse Electric Corp Method of making a semiconductor by oxidizing and simultaneous diffusion of impurities having different rates of diffusivity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5036377A (en) * 1988-08-03 1991-07-30 Texas Instruments Incorporated Triac array

Also Published As

Publication number Publication date
JPS4851592A (en) 1973-07-19
NL7214234A (en) 1973-04-25
FR2156819A1 (en) 1973-06-01
IT964378B (en) 1974-01-21
FR2156819B1 (en) 1977-12-30
BE790415A (en) 1973-02-15
DE2251251A1 (en) 1973-04-26
CA972076A (en) 1975-07-29

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees