FR2336802A1 - Triac with high speed voltage change during switching - has grooves formed on conductive surfaces filled with insulating material to prevent lateral current flow - Google Patents

Triac with high speed voltage change during switching - has grooves formed on conductive surfaces filled with insulating material to prevent lateral current flow

Info

Publication number
FR2336802A1
FR2336802A1 FR7539754A FR7539754A FR2336802A1 FR 2336802 A1 FR2336802 A1 FR 2336802A1 FR 7539754 A FR7539754 A FR 7539754A FR 7539754 A FR7539754 A FR 7539754A FR 2336802 A1 FR2336802 A1 FR 2336802A1
Authority
FR
France
Prior art keywords
triac
high speed
insulating material
current flow
voltage change
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7539754A
Other languages
French (fr)
Other versions
FR2336802B1 (en
Inventor
Rene Locqueneux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silec Semi Conducteurs SA
Original Assignee
Silec Semi Conducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silec Semi Conducteurs SA filed Critical Silec Semi Conducteurs SA
Priority to FR7539754A priority Critical patent/FR2336802A1/en
Publication of FR2336802A1 publication Critical patent/FR2336802A1/en
Application granted granted Critical
Publication of FR2336802B1 publication Critical patent/FR2336802B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

The triac consists of top layer (fig. 4B) comprising triangular P and N zones with N and P zones doped into adjacent corners of the triangles: ang a bottom layer (fig. 4C) the mirror image of the top layer but without the doped corner zones. The two layers are separated by an N-type layer (N2) as in prior art structures. A groove (shaded area) is provided between the two triangles in both the top and bottom layers. These two grooves are formed by chemical etching and are filled with a passive material. The grooves extend into the central N-type layer (N2) and effectively form a barrier between the two lateral halves of the structure -- ie the currents are constrained to follow a given curve.
FR7539754A 1975-12-24 1975-12-24 Triac with high speed voltage change during switching - has grooves formed on conductive surfaces filled with insulating material to prevent lateral current flow Granted FR2336802A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7539754A FR2336802A1 (en) 1975-12-24 1975-12-24 Triac with high speed voltage change during switching - has grooves formed on conductive surfaces filled with insulating material to prevent lateral current flow

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7539754A FR2336802A1 (en) 1975-12-24 1975-12-24 Triac with high speed voltage change during switching - has grooves formed on conductive surfaces filled with insulating material to prevent lateral current flow

Publications (2)

Publication Number Publication Date
FR2336802A1 true FR2336802A1 (en) 1977-07-22
FR2336802B1 FR2336802B1 (en) 1982-02-19

Family

ID=9164170

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7539754A Granted FR2336802A1 (en) 1975-12-24 1975-12-24 Triac with high speed voltage change during switching - has grooves formed on conductive surfaces filled with insulating material to prevent lateral current flow

Country Status (1)

Country Link
FR (1) FR2336802A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2566582A1 (en) * 1984-06-22 1985-12-27 Silicium Semiconducteur Ssc Avalanche-triggered bidirectional protection device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3317746A (en) * 1963-12-10 1967-05-02 Electronic Controls Corp Semiconductor device and circuit
FR2156819A1 (en) * 1971-10-22 1973-06-01 Rca Corp
FR2328289A1 (en) * 1975-10-16 1977-05-13 Silec Semi Conducteurs Unlatchable four polarisation mode triac - has approximately equal gate currents in all four modes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3317746A (en) * 1963-12-10 1967-05-02 Electronic Controls Corp Semiconductor device and circuit
FR2156819A1 (en) * 1971-10-22 1973-06-01 Rca Corp
FR2328289A1 (en) * 1975-10-16 1977-05-13 Silec Semi Conducteurs Unlatchable four polarisation mode triac - has approximately equal gate currents in all four modes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2566582A1 (en) * 1984-06-22 1985-12-27 Silicium Semiconducteur Ssc Avalanche-triggered bidirectional protection device

Also Published As

Publication number Publication date
FR2336802B1 (en) 1982-02-19

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