GB963846A - Manufacture of semi-conductor devices - Google Patents

Manufacture of semi-conductor devices

Info

Publication number
GB963846A
GB963846A GB432961A GB432961A GB963846A GB 963846 A GB963846 A GB 963846A GB 432961 A GB432961 A GB 432961A GB 432961 A GB432961 A GB 432961A GB 963846 A GB963846 A GB 963846A
Authority
GB
United Kingdom
Prior art keywords
semi
jet
conductor devices
junction
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB432961A
Inventor
Arthur Langridge
William Brian Glass
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB432961A priority Critical patent/GB963846A/en
Priority to FR886937A priority patent/FR1313611A/en
Publication of GB963846A publication Critical patent/GB963846A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

963,846. Semi-conductor devices. WESTING- HOUSE BRAKE & SIGNAL CO. Ltd. Jan. 9, 1962 [Feb. 6, 1961], No. 4329/61. Heading H1K. The surface of the junction in a germanium or silicon semi-conductor device is etched by rotating the device (at 200 revs./min.) and directing a jet of etchant, e.g. 3 parts HNO 3 and one part HF, at the surface, immediately after which the surface is washed by flooding it with deionized water. The etching may last for one minute, and the washing process which begins one second before etching finishes may continue for a further minute. A jet of acetone is directed at the junction one second before completion of washing and this is followed after 15 seconds by a jet of xylene. The device may then be coated with a silicone resin.
GB432961A 1961-02-06 1961-02-06 Manufacture of semi-conductor devices Expired GB963846A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB432961A GB963846A (en) 1961-02-06 1961-02-06 Manufacture of semi-conductor devices
FR886937A FR1313611A (en) 1961-02-06 1962-02-05 Method of manufacturing an asymmetric conductivity device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB432961A GB963846A (en) 1961-02-06 1961-02-06 Manufacture of semi-conductor devices

Publications (1)

Publication Number Publication Date
GB963846A true GB963846A (en) 1964-07-15

Family

ID=9775114

Family Applications (1)

Application Number Title Priority Date Filing Date
GB432961A Expired GB963846A (en) 1961-02-06 1961-02-06 Manufacture of semi-conductor devices

Country Status (1)

Country Link
GB (1) GB963846A (en)

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