GB960035A - Improvements in apparatus for the production of semi-conductor material - Google Patents

Improvements in apparatus for the production of semi-conductor material

Info

Publication number
GB960035A
GB960035A GB1213562A GB1213562A GB960035A GB 960035 A GB960035 A GB 960035A GB 1213562 A GB1213562 A GB 1213562A GB 1213562 A GB1213562 A GB 1213562A GB 960035 A GB960035 A GB 960035A
Authority
GB
United Kingdom
Prior art keywords
carriers
reaction chamber
silicon
conductor
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1213562A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB960035A publication Critical patent/GB960035A/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65B—MACHINES, APPARATUS OR DEVICES FOR, OR METHODS OF, PACKAGING ARTICLES OR MATERIALS; UNPACKING
    • B65B39/00—Nozzles, funnels or guides for introducing articles or materials into containers or wrappers
    • B65B39/06—Nozzles, funnels or guides for introducing articles or materials into containers or wrappers adapted to support containers or wrappers
    • B65B39/08—Nozzles, funnels or guides for introducing articles or materials into containers or wrappers adapted to support containers or wrappers by means of clamps
    • B65B39/10—Nozzles, funnels or guides for introducing articles or materials into containers or wrappers adapted to support containers or wrappers by means of clamps operating automatically
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals

Abstract

An apparatus for the production of silicon comprising a reaction chamber provided with a gas inlet and outlet means and two or more rod-like carriers each supported at one end thereof and arranged within the reaction chamber in such a manner that the other, unsupported, ends of the carriers are electrically connected together, the mounted ends of the carriers being adapted so that they can be connected to a source of electric current whereby the carriers can be heated to a temperature not greater than 200 DEG C. below the melting point of the semi-conductor material from which they are made, is characterized in that the greatest distance separating the, or any two, carriers is smaller than the smallest distance of one of the carriers from the or a wall of the reaction chamber. Preferably the ratio of the distances is at least 2. In operation, a stream of gas, for example hydrogen and a silicon compound e.g. SiCl4, SiH2Cl2, SiH3Cl, SiBr4, SiHBr3, SiHCl3 or the corresponding germanium compounds is introduced into the apparatus through inlet means. With hydrogen and SiHCl3 the temperature is preferably 1150 DEG C. and the hydrogen to SiHCl3 molar ratio is 20 : 1 and the throughput is 2 cubic <PICT:0960035/C1/1> metres per hour. In Fig. 1, the reaction chamber is defined by a cylindrical upper portion 8 of quartz or glass and base portion 9 of metal through which conductors 5 and 6 pass, conductor 5 being earthed and electrically connected to base 9, whilst conductor 6 is insulated through the base which may be cooled by water or gas. The carriers 2 and 3, preferably 25-50 mm. apart, consist of silicon and extend longitudinally in the reaction chamber and are connected at their upper ends by member 4 of spectrally pure carbon or silicon. Alternatively the unsupported ends may be in contact with one another. The reaction mixture is supplied through tube 10 arranged to extend within tube 11 through which the waste gases are discharged thus preheating the reaction gases. Specification 861,135 is referred to.ALSO:An apparatus for the production of germanium a silicon comprising a reaction chamber provided with gas inlet and outlet means and two or more rod-like carriers each supported at one end thereof and arranged within the reaction chamber in such a manner that the other, unsupported ends of the carriers are electrically connected together, the mounted ends of the carriers being adapted so that they can be connected to a source of electric current whereby the carriers can be heated to a temperature not greater than 200 DEG C. below the melting point of the semi-conductor material from which they are made, is characterized in that the greatest distance separating the, or any two, carriers is smaller than the smallest distance of one of the carriers from the or a wall of the reaction chamber. Preferably the ratio of the distances is at least 2. Hydrogen and a germanium compound e.g. GeCl4, GeH2Cl2, GeH3Cl, GeBr4, GeHBr3, GeHCl3 may be used. In Fig. 1 the reaction chamber is defined by a cylindrical upper portion 8 of quartz or glass and a base portion 9 of metal through which conductors 5 and 6 pass, conductor 5 being earthed and electrically connected to base 9, whilst conductor 6 is insulated through the base which may be cooled by water or gas. The carriers 2 and 3, preferably 25-50 mms. apart, consist of silicon and extend longitudinally in the reaction chamber and are connected at their upper ends by member 4 of spectrally pure carbon or silicon. Alternatively the unsupported ends may be in contact with one another. The reaction mixture is supplied through tube 10 arranged to extend with tube 11 through which the waste gases are discharged thus preheating the reaction gases. Specification 861,135 is referred to. <PICT:0960035/C6-C7/1>
GB1213562A 1961-04-25 1962-03-29 Improvements in apparatus for the production of semi-conductor material Expired GB960035A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES73645A DE1206261B (en) 1961-04-25 1961-04-25 Device for separating the purest semiconductor material from a flowing mixture of a gaseous compound, preferably a halide, the semiconductor material and a gaseous reactant

Publications (1)

Publication Number Publication Date
GB960035A true GB960035A (en) 1964-06-10

Family

ID=7504069

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1213562A Expired GB960035A (en) 1961-04-25 1962-03-29 Improvements in apparatus for the production of semi-conductor material

Country Status (5)

Country Link
BE (1) BE616861A (en)
CH (1) CH422728A (en)
DE (1) DE1206261B (en)
GB (1) GB960035A (en)
NL (1) NL275555A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061593B (en) * 1956-06-25 1959-07-16 Siemens Ag Device for obtaining the purest semiconductor material for electrotechnical purposes

Also Published As

Publication number Publication date
CH422728A (en) 1966-10-31
BE616861A (en) 1962-10-25
NL275555A (en)
DE1206261B (en) 1965-12-02

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