GB952361A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB952361A
GB952361A GB31576/60A GB3157660A GB952361A GB 952361 A GB952361 A GB 952361A GB 31576/60 A GB31576/60 A GB 31576/60A GB 3157660 A GB3157660 A GB 3157660A GB 952361 A GB952361 A GB 952361A
Authority
GB
United Kingdom
Prior art keywords
wafer
germanium
charge
silicon
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB31576/60A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB952361A publication Critical patent/GB952361A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50Alloying conductive materials with semiconductor bodies

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
GB31576/60A 1959-09-29 1960-09-13 Semiconductor devices Expired GB952361A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84318659A 1959-09-29 1959-09-29

Publications (1)

Publication Number Publication Date
GB952361A true GB952361A (en) 1964-03-18

Family

ID=25289283

Family Applications (1)

Application Number Title Priority Date Filing Date
GB31576/60A Expired GB952361A (en) 1959-09-29 1960-09-13 Semiconductor devices

Country Status (6)

Country Link
CH (1) CH397871A (https=)
DE (1) DE1219127B (https=)
DK (1) DK119168B (https=)
ES (1) ES261334A1 (https=)
GB (1) GB952361A (https=)
NL (1) NL256342A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2484702A1 (fr) * 1980-06-16 1981-12-18 Nishizawa Junichi Procede pour la fabrication de jonction pn de semi-conducteurs

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL292671A (https=) 1962-05-14

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
NL180221B (nl) * 1952-07-29 Charbonnages Ste Chimique Werkwijze ter bereiding van een polyaminoamidehardingsmiddel voor epoxyharsen; werkwijze ter bereiding van een in water verdeeld hardingsmiddel; werkwijze ter bereiding van een epoxyharssamenstelling die een dergelijk hardingsmiddel bevat alsmede voorwerp voorzien van een bekledingslaag verkregen uit een dergelijke epoxyharssamenstelling.
US2765245A (en) * 1952-08-22 1956-10-02 Gen Electric Method of making p-n junction semiconductor units
US2821493A (en) * 1954-03-18 1958-01-28 Hughes Aircraft Co Fused junction transistors with regrown base regions
GB864771A (en) * 1956-11-23 1961-04-06 Pye Ltd Improvements in or relating to junction transistors
DE1062823B (de) * 1957-07-13 1959-08-06 Telefunken Gmbh Verfahren zur Herstellung von Kristalloden des Legierungstyps
NL243304A (https=) 1959-09-12 1900-01-01

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2484702A1 (fr) * 1980-06-16 1981-12-18 Nishizawa Junichi Procede pour la fabrication de jonction pn de semi-conducteurs
US4526632A (en) * 1980-06-16 1985-07-02 Jun-Ichi Nishizawa Method of fabricating a semiconductor pn junction

Also Published As

Publication number Publication date
DE1219127B (de) 1966-06-16
DK119168B (da) 1970-11-23
ES261334A1 (es) 1961-03-16
CH397871A (de) 1965-08-31
NL256342A (https=)

Similar Documents

Publication Publication Date Title
GB833971A (en) Improvements in silicon carbide semiconductor devices and method of preparation thereof
US2957789A (en) Semiconductor devices and methods of preparing the same
GB809641A (en) Improved methods of treating semiconductor bodies
GB963256A (en) Semiconductor devices
US3074826A (en) Method of producing semi-conductive devices, more particularly transistors
US2932594A (en) Method of making surface alloy junctions in semiconductor bodies
GB836851A (en) Improvements in semiconductor devices and methods of making same
GB916948A (en) Improvements in methods of applying a rectifying connection to a semiconductor body
US2966434A (en) Semi-conductor devices
GB794128A (en) Improvements in or relating to methods of forming a junction in a semiconductor
GB744929A (en) Improvements in or relating to methods of making barriers in semiconductors
GB1004950A (en) Semiconductor devices and methods of making them
GB952361A (en) Semiconductor devices
US2940022A (en) Semiconductor devices
US3010857A (en) Semi-conductor devices and methods of making same
GB848226A (en) Method for producing junctions in semiconductor device
US2817609A (en) Alkali metal alloy agents for autofluxing in junction forming
US2980560A (en) Methods of making semiconductor devices
US2943005A (en) Method of alloying semiconductor material
US2859141A (en) Method for making a semiconductor junction
GB825674A (en) Semiconductor device and method of making same
US2829993A (en) Process for making fused junction semiconductor devices with alkali metalgallium alloy
GB752457A (en) Improvements relating to p-n junction semi-conductors
US2977256A (en) Semiconductor devices and methods of making same
GB894984A (en) P-n junction formation