GB925042A - A method of producing gold-silicon alloy contacts - Google Patents

A method of producing gold-silicon alloy contacts

Info

Publication number
GB925042A
GB925042A GB831760A GB831760A GB925042A GB 925042 A GB925042 A GB 925042A GB 831760 A GB831760 A GB 831760A GB 831760 A GB831760 A GB 831760A GB 925042 A GB925042 A GB 925042A
Authority
GB
United Kingdom
Prior art keywords
gold
alloy
silicon
silicon alloy
aluminium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB831760A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB925042A publication Critical patent/GB925042A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5893—Mixing of deposited material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Abstract

In a method of forming a gold alloy contact on silicon, the latter is heated to a temperature between 150 DEG C. and the eutectic point of the silicon-gold alloy system, coated under vacuum with gold, which may contain up to 15% of germanium, and then slowly cooled to room temperature, e.g. over at least 15 minutes. The final alloy may contain an activator from Group III or V of the Periodic Table, particularly antimony or aluminium, and is produced by heating the coated silicon in contact with aluminium or with a gold-antimony alloy to 400-800 DEG C. in an inert atmosphere. Alternatively, the alloy constituents may be codeposited with the gold followed by the elevated temperature alloying process.
GB831760A 1959-03-09 1960-03-09 A method of producing gold-silicon alloy contacts Expired GB925042A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL32663A DE1152865B (en) 1959-03-09 1959-03-09 Process for the production of alloy contacts by alloying gold or predominantly gold-containing alloys to silicon bodies

Publications (1)

Publication Number Publication Date
GB925042A true GB925042A (en) 1963-05-01

Family

ID=7265998

Family Applications (1)

Application Number Title Priority Date Filing Date
GB831760A Expired GB925042A (en) 1959-03-09 1960-03-09 A method of producing gold-silicon alloy contacts

Country Status (3)

Country Link
DE (1) DE1152865B (en)
GB (1) GB925042A (en)
NL (1) NL249198A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1281035B (en) * 1965-01-22 1968-10-24 Itt Ind Ges Mit Beschraenkter Method for applying a contact layer on a silicon semiconductor body
DE1287400C2 (en) * 1965-03-02 1973-09-13 Siemens AG, Berlin und München, 8000 München PROCESS FOR VACUUM EVAPORATION OF A METAL LAYER, IN PARTICULAR OF GOLD

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE544843A (en) * 1955-02-25
BE547665A (en) * 1955-06-28

Also Published As

Publication number Publication date
NL249198A (en)
DE1152865B (en) 1963-08-14

Similar Documents

Publication Publication Date Title
GB759002A (en) Production of semiconductor bodies
GB905553A (en) Improvements in or relating to the production of semi-conductor devices
GB865370A (en) Improvements in or relating to processes for producing semi-conductor devices
GB843869A (en) Improvements in or relating to silicon semiconductor devices and to processes for producing same
GB760649A (en) Method of fusing a material to a silicon surface region and the product made thereby
GB925042A (en) A method of producing gold-silicon alloy contacts
HK87679A (en) A process for attaching a lead member to a semi-conductor device and product thereof
US3060018A (en) Gold base alloy
GB952288A (en) Improvements relating to thermally treated aluminum base alloy articles
GB1324576A (en) Method of producing a solar cell
JPS52150327A (en) Lead wire and its production method
ES271352A1 (en) Method of making silicon alloydiffused semiconductor device
GB984141A (en) Improvements in or relating to methods of alloying to semiconductor bodies
GB966594A (en) Improvements in or relating to methods of manufacturing semiconductor devices
GB925182A (en) Silver base semiconductor doping alloys
GB998939A (en) Improvements in and relating to semiconductor devices
GB743608A (en) Diffusion type semi-conductor devices
GB876340A (en) Preparation of semiconductor devices
GB775616A (en) Processing of alloy junction devices
GB989817A (en) A process of producing a semi-conductor component
GB835583A (en) Improvements relating to the formation of metal contacts on silicon
GB895239A (en) A method of making p-n junctions with silicon
GB879212A (en) A method of reducing titanium-base alloys
GB864239A (en) A process for providing a semi-conductor body with a metal electrode
GB896316A (en) Improvements in or relating to semi-conductor devices