GB775616A - Processing of alloy junction devices - Google Patents
Processing of alloy junction devicesInfo
- Publication number
- GB775616A GB775616A GB1097255A GB1097255A GB775616A GB 775616 A GB775616 A GB 775616A GB 1097255 A GB1097255 A GB 1097255A GB 1097255 A GB1097255 A GB 1097255A GB 775616 A GB775616 A GB 775616A
- Authority
- GB
- United Kingdom
- Prior art keywords
- alloy
- minutes
- flux
- treatment
- alloy junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000956 alloy Substances 0.000 title abstract 5
- 229910045601 alloy Inorganic materials 0.000 title abstract 5
- 230000004907 flux Effects 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Products (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
775,616. Processing alloy junction devices. SYLVANIA ELECTRIC PRODUCTS, Inc. April 15, 1955, No. 10972/55. Class 37. An alloy junction is produced by heat-treating a semi-conductor body and an alloy terminal body with a molten flux at a temperature high enough to alloy the two bodies. This treatment may take place during the alloying process or after initial alloying. In an example, indium dots 12 are bonded to an N-type germanium body by heating in nitrogen. The pre-fired unit is then supported on a graphite block 14 in a container 16 and is covered with molten flux, e.g. a 2 to 1 mixture of potassium cyanide and sodium cyanide. The temperature is raised to 590‹ C. by heater 20 and maintained for about 20 minutes; it is then quickly lowered to about 200‹ C. and held there for 40 minutes and thereafter allowed to drop slowly. After this treatment the flux is rinsed off and the unit so formed is boiled in de-mineralized water and wiped dry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1097255A GB775616A (en) | 1955-04-15 | 1955-04-15 | Processing of alloy junction devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1097255A GB775616A (en) | 1955-04-15 | 1955-04-15 | Processing of alloy junction devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB775616A true GB775616A (en) | 1957-05-29 |
Family
ID=9977697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1097255A Expired GB775616A (en) | 1955-04-15 | 1955-04-15 | Processing of alloy junction devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB775616A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1132404B (en) * | 1958-10-24 | 1962-06-28 | Siemens Ag | Method for producing a pn junction in a body made of a semiconductor base material by alloying a pill of a doping metal |
-
1955
- 1955-04-15 GB GB1097255A patent/GB775616A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1132404B (en) * | 1958-10-24 | 1962-06-28 | Siemens Ag | Method for producing a pn junction in a body made of a semiconductor base material by alloying a pill of a doping metal |
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