GB896316A - Improvements in or relating to semi-conductor devices - Google Patents

Improvements in or relating to semi-conductor devices

Info

Publication number
GB896316A
GB896316A GB20462/60A GB2046260A GB896316A GB 896316 A GB896316 A GB 896316A GB 20462/60 A GB20462/60 A GB 20462/60A GB 2046260 A GB2046260 A GB 2046260A GB 896316 A GB896316 A GB 896316A
Authority
GB
United Kingdom
Prior art keywords
metal
good heat
heat conductivity
molten
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20462/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB896316A publication Critical patent/GB896316A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01067—Holmium [Ho]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Abstract

896,316. Transistors. SIEMENS & HALSKE A. G. June 10, 1960 [June 12, 1959], No. 20462/60. Addition to 886,561. Class 37. A method of producing a semi-conductor device includes the steps of alloying a piece of significant impurity metal to a body of semiconductor material, thereafter maintaining that part of the metal outside the alloy zone in a molten state at a temperature lower than that required for alloying, removing a large proportion of the said molten metal by means of suction, and attaching a member of good heat conductivity to that surface from which the molten metal has been removed. Thus the metal body of good heat conductivity may have an aperture and be connected to the remaining metal by the method described in the parent Specification. Fig. 2 shows a plate 1 of ntype germanium having an annular base contact 2, and indium emitter and collector electrodes 3, 4, alloyed to the plate 1 at about 500‹ C. The device is subjected to streams of nitrogen at about 250‹ C., and the molten indium forming the collector electrode is sucked away via a glass pipe 7. A small piece of solder, e.g. 60/40 Sn/Pb with flux core, is then melted on the collector area and a disc-shaped contact member 9, Fig. 3, of good heat conductivity material, e.g. copper, is placed on the solder layer and thereby attached to the alloy zone, in an atmosphere of nitrogen. The disc 9 may then be soldered to a larger plate of good heat conductivity. The suction step may take place in a reducing atmosphere.
GB20462/60A 1959-06-12 1960-06-10 Improvements in or relating to semi-conductor devices Expired GB896316A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES63436A DE1144851B (en) 1959-06-12 1959-06-12 Process for contacting electrodes alloyed in semiconductor bodies

Publications (1)

Publication Number Publication Date
GB896316A true GB896316A (en) 1962-05-16

Family

ID=7496385

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20462/60A Expired GB896316A (en) 1959-06-12 1960-06-10 Improvements in or relating to semi-conductor devices

Country Status (4)

Country Link
CH (1) CH401270A (en)
DE (1) DE1144851B (en)
GB (1) GB896316A (en)
NL (1) NL251274A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2622000A1 (en) * 1976-05-18 1977-12-01 Bosch Gmbh Robert Microsoldering of hybrid thin film circuits - using stream of hot nitrogen as the heat source

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2725505A (en) * 1953-11-30 1955-11-29 Rca Corp Semiconductor power devices
AT187598B (en) * 1954-04-07 1956-11-10 Int Standard Electric Corp Crystal rectifier or crystal amplifier

Also Published As

Publication number Publication date
NL251274A (en) 1900-01-01
DE1144851B (en) 1963-03-07
CH401270A (en) 1965-10-31

Similar Documents

Publication Publication Date Title
GB730123A (en) Improved method of fabricating semi-conductive devices
GB959447A (en) Semiconductor devices
US3228104A (en) Method of attaching an electric connection to a semiconductor device
GB807959A (en) Fused junction semiconductor devices
GB775366A (en) Semiconductor signal translating devices and methods of making them
US2913642A (en) Method and apparatus for making semi-conductor devices
US3002271A (en) Method of providing connection to semiconductive structures
GB896316A (en) Improvements in or relating to semi-conductor devices
US2817607A (en) Method of making semi-conductor bodies
US3065534A (en) Method of joining a semiconductor to a conductor
US2813817A (en) Semiconductor devices and their manufacture
GB902383A (en) Improvements in and relating to the fabrication of semiconductor units
GB873043A (en) Improvements in or relating to methods of manufacturing semi-conductor components
GB930352A (en) Improvements in or relating to semi-conductor arrangements
US3018539A (en) Diffused base transistor and method of making same
GB851978A (en) Improvements in or relating to processes for the production of electrodes on semi-conductor bodies
JPS54153573A (en) Manufacture for compound semiconductor device
GB863010A (en) Improvements in or relating to the production of semi-conductor devices
US3224069A (en) Method of fabricating semiconductor devices
US2957788A (en) Alloy junction type semiconductor devices and methods of making them
GB998939A (en) Improvements in and relating to semiconductor devices
GB998010A (en) Improvements in or relating to methods of manufacturing semiconductor devices
GB906060A (en) Improvements in or relating to the manufacture of junction transistors
GB1041466A (en) Semiconductor devices
GB844970A (en) Improvements relating to semi-conductor devices