GB924545A - Process for the manufacture of silicon of high purity - Google Patents

Process for the manufacture of silicon of high purity

Info

Publication number
GB924545A
GB924545A GB1984261A GB1984261A GB924545A GB 924545 A GB924545 A GB 924545A GB 1984261 A GB1984261 A GB 1984261A GB 1984261 A GB1984261 A GB 1984261A GB 924545 A GB924545 A GB 924545A
Authority
GB
United Kingdom
Prior art keywords
silicon
stage
hydrogen
silane
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1984261A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Knapsack AG
Original Assignee
Knapsack AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Knapsack AG filed Critical Knapsack AG
Publication of GB924545A publication Critical patent/GB924545A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon

Abstract

High purity silicon is prepared by reacting silicon halides with excess hydrogen at a temperature of at least 2500 DEG C., the resulting product being quenched, condensed to remove hydrogen, and fractionated. The silane and usually the mono and di-halo silane fractions are then decomposed in a second stage at a temperature of at least 500 DEG C., on a wall, depositing thereon elemental silicon; the unreacted silicon halide fraction is recycled to the first stage. Silicon trihalides formed in the first stage may be either decomposed to yield silicon or recycled to the first stage. The excess hydrogen for use may be heated by means of a luminous arc and passed through a water cooled pipe at a speed of at least 50m.sec.-1, the silicon halide being introduced by means of peripheral slots. The mixture thus formed is impinged upon a water cooled surface at a temperature of less than 20 DEG C., and then condensed at a low temperature surface condenser and finally fractionated in a distilling column. The silane and halo-silane fractions, in the presence of a carrier gas which may be hydrogen or argon, are then conducted through a tube heated to at least 500 DEG C. where pure, compact silicon is deposited. Specific examples include the use of hydrogen heated to 4000 DEG C., the reaction mixtures being condensed at-120 DEG C., and the halo silanes produced being decomposed in a quartz tube at 1000 DEG C.
GB1984261A 1960-07-07 1961-06-01 Process for the manufacture of silicon of high purity Expired GB924545A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEK41130A DE1129145B (en) 1960-07-07 1960-07-07 Process for the production of high purity silicon

Publications (1)

Publication Number Publication Date
GB924545A true GB924545A (en) 1963-04-24

Family

ID=7222303

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1984261A Expired GB924545A (en) 1960-07-07 1961-06-01 Process for the manufacture of silicon of high purity

Country Status (3)

Country Link
BE (1) BE605340A (en)
DE (1) DE1129145B (en)
GB (1) GB924545A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4117094A (en) * 1977-06-13 1978-09-26 Texas Instruments Incorporated Process for silicon and trichlorosilane production
US4836997A (en) * 1982-07-26 1989-06-06 Rhone-Poulenc Specialites Chimiques Plasma production of trichorosilane, SiHCl3

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4102764A (en) * 1976-12-29 1978-07-25 Westinghouse Electric Corp. High purity silicon production by arc heater reduction of silicon intermediates
US4102765A (en) * 1977-01-06 1978-07-25 Westinghouse Electric Corp. Arc heater production of silicon involving alkali or alkaline-earth metals
US4102767A (en) * 1977-04-14 1978-07-25 Westinghouse Electric Corp. Arc heater method for the production of single crystal silicon
DE102010044755A1 (en) 2010-09-08 2012-03-08 Spawnt Private S.À.R.L. Process for producing high purity silicon

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1072227B (en) * 1959-12-31 Wacker-Chemic G.m.b.H., München Method and device for cleaning liquid compounds from which semiconductor material is manufactured
US2768061A (en) * 1953-02-26 1956-10-23 Gen Electric Hydrogen reduction method and apparatus
NL218408A (en) * 1954-05-18 1900-01-01
DE1048638B (en) * 1957-07-02 1959-01-15 Siemens &. Halske Aktiengesellschaft, Berlin und München Process for the production of semiconductor single crystals, in particular silicon, by thermal decomposition or reduction
BE571013A (en) * 1957-09-07

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4117094A (en) * 1977-06-13 1978-09-26 Texas Instruments Incorporated Process for silicon and trichlorosilane production
US4836997A (en) * 1982-07-26 1989-06-06 Rhone-Poulenc Specialites Chimiques Plasma production of trichorosilane, SiHCl3

Also Published As

Publication number Publication date
BE605340A (en) 1961-10-16
DE1129145B (en) 1962-05-10

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