GB924121A - A monocrystalline semi-conductor device - Google Patents

A monocrystalline semi-conductor device

Info

Publication number
GB924121A
GB924121A GB39111/60A GB3911160A GB924121A GB 924121 A GB924121 A GB 924121A GB 39111/60 A GB39111/60 A GB 39111/60A GB 3911160 A GB3911160 A GB 3911160A GB 924121 A GB924121 A GB 924121A
Authority
GB
United Kingdom
Prior art keywords
region
doped
boundary
layer
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB39111/60A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Original Assignee
Siemens Schuckertwerke AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES65833A external-priority patent/DE1208412B/de
Application filed by Siemens Schuckertwerke AG filed Critical Siemens Schuckertwerke AG
Publication of GB924121A publication Critical patent/GB924121A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D64/011—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P32/16—
    • H10P95/00—
    • H10P95/50—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
GB39111/60A 1959-11-13 1960-11-14 A monocrystalline semi-conductor device Expired GB924121A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0065818 1959-11-13
DES65833A DE1208412B (de) 1959-11-13 1959-11-13 Elektrisches Halbleiterbauelement mit mindestens einem an die Oberflaeche des Halbleiterkoerpers tretenden pn-UEbergang und Verfahren zum Herstellen eines solchen Bauelements

Publications (1)

Publication Number Publication Date
GB924121A true GB924121A (en) 1963-04-24

Family

ID=25995901

Family Applications (1)

Application Number Title Priority Date Filing Date
GB39111/60A Expired GB924121A (en) 1959-11-13 1960-11-14 A monocrystalline semi-conductor device

Country Status (2)

Country Link
DE (1) DE1414438B2 (enExample)
GB (1) GB924121A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3226613A (en) * 1962-08-23 1965-12-28 Motorola Inc High voltage semiconductor device
DE1231355B (de) * 1963-08-20 1966-12-29 Siemens Ag Verfahren zur Herstellung einer Halbleiter-anordnung mit einem legierten pn-UEbergang
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3226613A (en) * 1962-08-23 1965-12-28 Motorola Inc High voltage semiconductor device
US3226611A (en) * 1962-08-23 1965-12-28 Motorola Inc Semiconductor device
US3226614A (en) * 1962-08-23 1965-12-28 Motorola Inc High voltage semiconductor device
US3226612A (en) * 1962-08-23 1965-12-28 Motorola Inc Semiconductor device and method
DE1231355B (de) * 1963-08-20 1966-12-29 Siemens Ag Verfahren zur Herstellung einer Halbleiter-anordnung mit einem legierten pn-UEbergang
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices

Also Published As

Publication number Publication date
DE1414438A1 (enExample) 1970-04-23
DE1414438B2 (enExample) 1970-04-23

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