GB923801A - Improvements in methods of producing semi-conductor arrangements - Google Patents

Improvements in methods of producing semi-conductor arrangements

Info

Publication number
GB923801A
GB923801A GB21279/61A GB2127961A GB923801A GB 923801 A GB923801 A GB 923801A GB 21279/61 A GB21279/61 A GB 21279/61A GB 2127961 A GB2127961 A GB 2127961A GB 923801 A GB923801 A GB 923801A
Authority
GB
United Kingdom
Prior art keywords
substrate
stage
deposition
donor
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21279/61A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB923801A publication Critical patent/GB923801A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/129—Pulse doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/158—Sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/979—Tunnel diodes

Landscapes

  • Photovoltaic Devices (AREA)
GB21279/61A 1960-06-13 1961-06-13 Improvements in methods of producing semi-conductor arrangements Expired GB923801A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES68909A DE1185293B (de) 1960-06-13 1960-06-13 Verfahren zum Herstellen einer Halbleiteranordnung

Publications (1)

Publication Number Publication Date
GB923801A true GB923801A (en) 1963-04-18

Family

ID=7500602

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21279/61A Expired GB923801A (en) 1960-06-13 1961-06-13 Improvements in methods of producing semi-conductor arrangements

Country Status (6)

Country Link
US (1) US3208888A (cg-RX-API-DMAC10.html)
CH (1) CH432656A (cg-RX-API-DMAC10.html)
DE (1) DE1185293B (cg-RX-API-DMAC10.html)
GB (1) GB923801A (cg-RX-API-DMAC10.html)
NL (1) NL265823A (cg-RX-API-DMAC10.html)
SE (1) SE220143C1 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118789463A (zh) * 2024-07-24 2024-10-18 合肥中科岛晶科技有限公司 一种高均一性无污染的晶圆精密喷砂装置及其工作方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3381114A (en) * 1963-12-28 1968-04-30 Nippon Electric Co Device for manufacturing epitaxial crystals
US3523046A (en) * 1964-09-14 1970-08-04 Ibm Method of epitaxially depositing single-crystal layer and structure resulting therefrom
US3502515A (en) * 1964-09-28 1970-03-24 Philco Ford Corp Method of fabricating semiconductor device which includes region in which minority carriers have short lifetime
US3502516A (en) * 1964-11-06 1970-03-24 Siemens Ag Method for producing pure semiconductor material for electronic purposes
DE1289833B (de) * 1964-12-29 1969-02-27 Siemens Ag Verfahren zum epitaktischen Abscheiden einer Halbleiterschicht
DE1287047B (de) * 1965-02-18 1969-01-16 Siemens Ag Verfahren und Vorrichtung zum Abscheiden einer einkristallinen Halbleiterschicht
US3522164A (en) * 1965-10-21 1970-07-28 Texas Instruments Inc Semiconductor surface preparation and device fabrication
US3486949A (en) * 1966-03-25 1969-12-30 Massachusetts Inst Technology Semiconductor heterojunction diode
US3517643A (en) * 1968-11-25 1970-06-30 Sylvania Electric Prod Vapor deposition apparatus including diffuser means
US3660180A (en) * 1969-02-27 1972-05-02 Ibm Constrainment of autodoping in epitaxial deposition
US3603284A (en) * 1970-01-02 1971-09-07 Ibm Vapor deposition apparatus
US3858548A (en) * 1972-08-16 1975-01-07 Corning Glass Works Vapor transport film deposition apparatus
US3970037A (en) * 1972-12-15 1976-07-20 Ppg Industries, Inc. Coating composition vaporizer
US3900345A (en) * 1973-08-02 1975-08-19 Motorola Inc Thin low temperature epi regions by conversion of an amorphous layer
US4115163A (en) * 1976-01-08 1978-09-19 Yulia Ivanovna Gorina Method of growing epitaxial semiconductor films utilizing radiant heating
US4075043A (en) * 1976-09-01 1978-02-21 Rockwell International Corporation Liquid phase epitaxy method of growing a junction between two semiconductive materials utilizing an interrupted growth technique
US4326898A (en) * 1978-11-13 1982-04-27 Massachusetts Institute Of Technology Method for forming material surfaces
US4421576A (en) * 1981-09-14 1983-12-20 Rca Corporation Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
CN112626615A (zh) * 2020-12-09 2021-04-09 黄梦蕾 一种半导体分立器用硅外延生长扩散辅助设备

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2702523A (en) * 1947-06-09 1955-02-22 Rene J Prestwood Apparatus for vapor coating base material in powder form
BE509317A (cg-RX-API-DMAC10.html) * 1951-03-07 1900-01-01
DE885756C (de) * 1951-10-08 1953-06-25 Telefunken Gmbh Verfahren zur Herstellung von p- oder n-leitenden Schichten
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US2817311A (en) * 1955-04-14 1957-12-24 Ohio Commw Eng Co Catalytic nickel plating apparatus
US2895858A (en) * 1955-06-21 1959-07-21 Hughes Aircraft Co Method of producing semiconductor crystal bodies
DE1029941B (de) * 1955-07-13 1958-05-14 Siemens Ag Verfahren zur Herstellung von einkristallinen Halbleiterschichten
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors
BE562491A (cg-RX-API-DMAC10.html) * 1956-03-05 1900-01-01
US2944321A (en) * 1958-12-31 1960-07-12 Bell Telephone Labor Inc Method of fabricating semiconductor devices
NL133151C (cg-RX-API-DMAC10.html) * 1959-05-28 1900-01-01
US3089794A (en) * 1959-06-30 1963-05-14 Ibm Fabrication of pn junctions by deposition followed by diffusion

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118789463A (zh) * 2024-07-24 2024-10-18 合肥中科岛晶科技有限公司 一种高均一性无污染的晶圆精密喷砂装置及其工作方法

Also Published As

Publication number Publication date
US3208888A (en) 1965-09-28
NL265823A (cg-RX-API-DMAC10.html)
CH432656A (de) 1967-03-31
SE220143C1 (cg-RX-API-DMAC10.html) 1968-04-23
DE1185293B (de) 1965-01-14

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