GB920307A - Improvements in the production of semi-conductor arrangements - Google Patents
Improvements in the production of semi-conductor arrangementsInfo
- Publication number
- GB920307A GB920307A GB9827/61A GB982761A GB920307A GB 920307 A GB920307 A GB 920307A GB 9827/61 A GB9827/61 A GB 9827/61A GB 982761 A GB982761 A GB 982761A GB 920307 A GB920307 A GB 920307A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- conductor
- particles
- substance
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5893—Mixing of deposited material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H10P95/00—
-
- H10W20/40—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0067645 | 1960-03-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB920307A true GB920307A (en) | 1963-03-06 |
Family
ID=7499701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9827/61A Expired GB920307A (en) | 1960-03-18 | 1961-03-17 | Improvements in the production of semi-conductor arrangements |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH400717A (enExample) |
| DE (1) | DE1302174B (enExample) |
| GB (1) | GB920307A (enExample) |
| NL (1) | NL261166A (enExample) |
-
0
- NL NL261166D patent/NL261166A/xx unknown
-
1960
- 1960-03-18 DE DE1302174*CA patent/DE1302174B/de active Pending
-
1961
- 1961-02-21 CH CH203761A patent/CH400717A/de unknown
- 1961-03-17 GB GB9827/61A patent/GB920307A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH400717A (de) | 1965-10-15 |
| DE1302174B (enExample) | 1970-07-23 |
| NL261166A (enExample) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1174613A (en) | Metallic Connection Layers on Semiconductor Components | |
| GB907427A (en) | A process for the production of a semi-conductor device | |
| GB1251631A (enExample) | ||
| GB843869A (en) | Improvements in or relating to silicon semiconductor devices and to processes for producing same | |
| GB920307A (en) | Improvements in the production of semi-conductor arrangements | |
| US2725316A (en) | Method of preparing pn junctions in semiconductors | |
| ES474770A1 (es) | Un procedimiento de fabricacion de silicio policristalino | |
| GB1258580A (enExample) | ||
| GB1341124A (en) | Semiconductor device | |
| GB851978A (en) | Improvements in or relating to processes for the production of electrodes on semi-conductor bodies | |
| US3409467A (en) | Silicon carbide device | |
| GB1125157A (en) | Improvements in or relating to materials for use as ohmic contacts | |
| JPS5768040A (en) | Electrode structure for semiconductor device | |
| GB914260A (en) | Improvements in or relating to the production of semi-conductor devices | |
| ES266181A1 (es) | Procedimiento para la purificaciën del silicio | |
| GB898119A (en) | A process for use in the production of a semi-conductor device | |
| GB1024727A (en) | Method of fabricating semiconductor devices | |
| JPS51118381A (en) | Manufacturing process for semiconductor unit | |
| GB1197315A (en) | Semiconductor Device | |
| JPS55107257A (en) | Ohmic electrode | |
| GB1041466A (en) | Semiconductor devices | |
| GB864239A (en) | A process for providing a semi-conductor body with a metal electrode | |
| GB998939A (en) | Improvements in and relating to semiconductor devices | |
| GB835583A (en) | Improvements relating to the formation of metal contacts on silicon | |
| JPS54155428A (en) | Glass mold type semiconductor device |