GB9016673D0 - Semiconductor memory device with stacked capacitor - Google Patents

Semiconductor memory device with stacked capacitor

Info

Publication number
GB9016673D0
GB9016673D0 GB909016673A GB9016673A GB9016673D0 GB 9016673 D0 GB9016673 D0 GB 9016673D0 GB 909016673 A GB909016673 A GB 909016673A GB 9016673 A GB9016673 A GB 9016673A GB 9016673 D0 GB9016673 D0 GB 9016673D0
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
stacked capacitor
capacitor
stacked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB909016673A
Other versions
GB2244596A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9016673D0 publication Critical patent/GB9016673D0/en
Publication of GB2244596A publication Critical patent/GB2244596A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9016673A 1990-05-31 1990-07-30 Semiconductor memory device with stacked capacitor Withdrawn GB2244596A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900008069A KR920009748B1 (en) 1990-05-31 1990-05-31 Stacked capacitor cell and method for producing the same

Publications (2)

Publication Number Publication Date
GB9016673D0 true GB9016673D0 (en) 1990-09-12
GB2244596A GB2244596A (en) 1991-12-04

Family

ID=19299691

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9016673A Withdrawn GB2244596A (en) 1990-05-31 1990-07-30 Semiconductor memory device with stacked capacitor

Country Status (6)

Country Link
JP (1) JPH0435062A (en)
KR (1) KR920009748B1 (en)
CN (1) CN1056946A (en)
DE (1) DE4023153A1 (en)
GB (1) GB2244596A (en)
IT (1) IT9048191A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112310047A (en) * 2019-08-01 2021-02-02 力晶积成电子制造股份有限公司 Capacitor integrated structure and capacitor thereof

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3147144B2 (en) * 1996-04-09 2001-03-19 日本電気株式会社 Semiconductor device and manufacturing method thereof
KR100475075B1 (en) * 2002-05-17 2005-03-10 삼성전자주식회사 Semiconductor memory device and method for manufacturing the same
US7538384B2 (en) * 2005-12-05 2009-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Non-volatile memory array structure

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2720533A1 (en) * 1977-05-06 1978-11-09 Siemens Ag MONOLITHIC INTEGRATED CIRCUIT ARRANGEMENT WITH SINGLE TRANSISTOR STORAGE ELEMENTS
JPS57120295A (en) * 1981-01-17 1982-07-27 Mitsubishi Electric Corp Semiconductor memory device
JPS602782B2 (en) * 1982-06-30 1985-01-23 富士通株式会社 semiconductor storage device
JPS602784B2 (en) * 1982-12-20 1985-01-23 富士通株式会社 semiconductor storage device
GB2143675B (en) * 1983-07-11 1987-05-07 Nat Semiconductor Corp High efficiency dynamic random access memory cell and process for fabricating it
JPH0618257B2 (en) * 1984-04-28 1994-03-09 富士通株式会社 Method of manufacturing semiconductor memory device
JPS61183952A (en) * 1985-02-09 1986-08-16 Fujitsu Ltd Semiconductor memory device and manufacture thereof
EP0750347B1 (en) * 1987-06-17 2002-05-08 Fujitsu Limited Dynamic random access memory device and method of producing the same
JP2755591B2 (en) * 1988-03-25 1998-05-20 株式会社東芝 Semiconductor storage device
JP2682021B2 (en) * 1988-06-29 1997-11-26 富士通株式会社 Semiconductor memory device
JPH0294471A (en) * 1988-09-30 1990-04-05 Toshiba Corp Semiconductor storage device and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112310047A (en) * 2019-08-01 2021-02-02 力晶积成电子制造股份有限公司 Capacitor integrated structure and capacitor thereof
CN112310047B (en) * 2019-08-01 2024-04-23 力晶积成电子制造股份有限公司 Capacitor integrated structure and capacitor thereof

Also Published As

Publication number Publication date
IT9048191A1 (en) 1991-12-01
GB2244596A (en) 1991-12-04
CN1056946A (en) 1991-12-11
JPH0435062A (en) 1992-02-05
IT9048191A0 (en) 1990-07-31
KR920009748B1 (en) 1992-10-22
KR910020903A (en) 1991-12-20
DE4023153A1 (en) 1991-12-05

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)