IT9048191A1 - "SEMI-CODUTTOR MEMORY DEVICE WITH CONDESANTOR CELL USED AND PROCEDURE FOR ITS MANUFACTURE". - Google Patents

"SEMI-CODUTTOR MEMORY DEVICE WITH CONDESANTOR CELL USED AND PROCEDURE FOR ITS MANUFACTURE".

Info

Publication number
IT9048191A1
IT9048191A1 IT048191A IT4819190A IT9048191A1 IT 9048191 A1 IT9048191 A1 IT 9048191A1 IT 048191 A IT048191 A IT 048191A IT 4819190 A IT4819190 A IT 4819190A IT 9048191 A1 IT9048191 A1 IT 9048191A1
Authority
IT
Italy
Prior art keywords
condesantor
coduttor
semi
procedure
manufacture
Prior art date
Application number
IT048191A
Other languages
Italian (it)
Other versions
IT9048191A0 (en
Inventor
Tae-Hyuk Ahn
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of IT9048191A0 publication Critical patent/IT9048191A0/en
Publication of IT9048191A1 publication Critical patent/IT9048191A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT048191A 1990-05-31 1990-07-31 "SEMI-CODUTTOR MEMORY DEVICE WITH CONDESANTOR CELL USED AND PROCEDURE FOR ITS MANUFACTURE". IT9048191A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900008069A KR920009748B1 (en) 1990-05-31 1990-05-31 Stacked capacitor cell and method for producing the same

Publications (2)

Publication Number Publication Date
IT9048191A0 IT9048191A0 (en) 1990-07-31
IT9048191A1 true IT9048191A1 (en) 1991-12-01

Family

ID=19299691

Family Applications (1)

Application Number Title Priority Date Filing Date
IT048191A IT9048191A1 (en) 1990-05-31 1990-07-31 "SEMI-CODUTTOR MEMORY DEVICE WITH CONDESANTOR CELL USED AND PROCEDURE FOR ITS MANUFACTURE".

Country Status (6)

Country Link
JP (1) JPH0435062A (en)
KR (1) KR920009748B1 (en)
CN (1) CN1056946A (en)
DE (1) DE4023153A1 (en)
GB (1) GB2244596A (en)
IT (1) IT9048191A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3147144B2 (en) * 1996-04-09 2001-03-19 日本電気株式会社 Semiconductor device and manufacturing method thereof
KR100475075B1 (en) * 2002-05-17 2005-03-10 삼성전자주식회사 Semiconductor memory device and method for manufacturing the same
US7538384B2 (en) * 2005-12-05 2009-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Non-volatile memory array structure
TWI679662B (en) * 2019-08-01 2019-12-11 力晶積成電子製造股份有限公司 Capacitor integrated structure and its capacitor and manufacturing method thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2720533A1 (en) * 1977-05-06 1978-11-09 Siemens Ag MONOLITHIC INTEGRATED CIRCUIT ARRANGEMENT WITH SINGLE TRANSISTOR STORAGE ELEMENTS
JPS57120295A (en) * 1981-01-17 1982-07-27 Mitsubishi Electric Corp Semiconductor memory device
JPS602782B2 (en) * 1982-06-30 1985-01-23 富士通株式会社 semiconductor storage device
JPS602784B2 (en) * 1982-12-20 1985-01-23 富士通株式会社 semiconductor storage device
GB2143675B (en) * 1983-07-11 1987-05-07 Nat Semiconductor Corp High efficiency dynamic random access memory cell and process for fabricating it
JPH0618257B2 (en) * 1984-04-28 1994-03-09 富士通株式会社 Method of manufacturing semiconductor memory device
JPS61183952A (en) * 1985-02-09 1986-08-16 Fujitsu Ltd Semiconductor memory device and manufacture thereof
DE3856143T2 (en) * 1987-06-17 1998-10-29 Fujitsu Ltd Method of making a dynamic random access memory cell
JP2755591B2 (en) * 1988-03-25 1998-05-20 株式会社東芝 Semiconductor storage device
JP2682021B2 (en) * 1988-06-29 1997-11-26 富士通株式会社 Semiconductor memory device
JPH0294471A (en) * 1988-09-30 1990-04-05 Toshiba Corp Semiconductor storage device and manufacture thereof

Also Published As

Publication number Publication date
DE4023153A1 (en) 1991-12-05
CN1056946A (en) 1991-12-11
GB2244596A (en) 1991-12-04
KR910020903A (en) 1991-12-20
GB9016673D0 (en) 1990-09-12
KR920009748B1 (en) 1992-10-22
IT9048191A0 (en) 1990-07-31
JPH0435062A (en) 1992-02-05

Similar Documents

Publication Publication Date Title
DE68907960D1 (en) IMAGE GENERATION DEVICE.
ITMI912354A1 (en) FLAT COLLECTOR AND PROCEDURE FOR ITS CONSTRUCTION
DE69316628D1 (en) Volatile memory cell
DE68915235D1 (en) Image recorder.
DE68908965D1 (en) Storage device.
DE69121760D1 (en) Semiconductor memory cell
DE3583158D1 (en) IMAGE GENERATION DEVICE.
DE59010020D1 (en) Static memory cell
DE69223500D1 (en) Gate array base cell
DE68919781D1 (en) Video storage arrangement.
NO901887L (en) FUEL CELL DEVICE AND PROCEDURE FOR THIS MANUFACTURING.
NO902798L (en) VERTICAL STORAGE DEVICE.
DE68913091D1 (en) Image recorder.
FI914019A0 (en) OMSLAG FOER EN ROEKNINGSARTIKEL. TRANSFERRED PAEIVAEMAEAERAE-FOERSKJUTET DATUM 14 ç 18.10.91.
DE68928509D1 (en) Image storage arrangement
ES508716A0 (en) "A MEMORY DEVICE WITH STATIC MTL MEMORY CELLS".
DE68915906D1 (en) Image recorder.
DE69124010D1 (en) Semiconductor memory cell
IT9048191A1 (en) "SEMI-CODUTTOR MEMORY DEVICE WITH CONDESANTOR CELL USED AND PROCEDURE FOR ITS MANUFACTURE".
DE68911594D1 (en) Image recorder.
DE68915084D1 (en) Image recorder.
DE68913868D1 (en) Superconducting transistor.
DE68908213D1 (en) IMAGE GENERATION DEVICE.
IT8221211A0 (en) SEMICONDUCTOR MEMORY DEVICE AND PROCEDURE FOR ITS MANUFACTURE.
DE68909443D1 (en) IMAGE GENERATION DEVICE.