GB886725A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB886725A
GB886725A GB9108/58A GB910858A GB886725A GB 886725 A GB886725 A GB 886725A GB 9108/58 A GB9108/58 A GB 9108/58A GB 910858 A GB910858 A GB 910858A GB 886725 A GB886725 A GB 886725A
Authority
GB
United Kingdom
Prior art keywords
indium
aluminium
silver
relating
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB9108/58A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US642743A external-priority patent/US2953693A/en
Priority claimed from US649038A external-priority patent/US3141119A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB886725A publication Critical patent/GB886725A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/12036—PN diode
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    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Thyristors (AREA)
GB9108/58A 1957-02-27 1958-03-21 Improvements in or relating to semiconductor devices Expired GB886725A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US642743A US2953693A (en) 1957-02-27 1957-02-27 Semiconductor diode
US649038A US3141119A (en) 1957-03-28 1957-03-28 Hyperconductive transistor switches

Publications (1)

Publication Number Publication Date
GB886725A true GB886725A (en) 1962-01-10

Family

ID=27094103

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9108/58A Expired GB886725A (en) 1957-02-27 1958-03-21 Improvements in or relating to semiconductor devices

Country Status (5)

Country Link
BE (2) BE565109A (de)
CH (2) CH369215A (de)
DE (1) DE1210088B (de)
FR (1) FR1205271A (de)
GB (1) GB886725A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL131695C (de) * 1960-07-19
DE1639311C2 (de) * 1968-03-08 1974-08-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Kontaktieren einer Halbleiteranordnung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE489418A (de) * 1948-06-26

Also Published As

Publication number Publication date
BE565109A (de) 1900-01-01
BE566141A (de) 1900-01-01
CH369215A (de) 1963-05-15
CH369828A (de) 1963-06-15
DE1210088B (de) 1966-02-03
FR1205271A (fr) 1960-02-02

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