BE565109A - - Google Patents
Info
- Publication number
- BE565109A BE565109A BE565109DA BE565109A BE 565109 A BE565109 A BE 565109A BE 565109D A BE565109D A BE 565109DA BE 565109 A BE565109 A BE 565109A
- Authority
- BE
- Belgium
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29109—Indium [In] as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29139—Silver [Ag] as principal constituent
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01L2924/01005—Boron [B]
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- H01L2924/01006—Carbon [C]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/01015—Phosphorus [P]
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- H01L2924/01023—Vanadium [V]
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- H01L2924/01027—Cobalt [Co]
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- H01L2924/01029—Copper [Cu]
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- H01L2924/01032—Germanium [Ge]
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- H01L2924/01033—Arsenic [As]
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- H01L2924/01047—Silver [Ag]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
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- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
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- H01L2924/01051—Antimony [Sb]
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- H01L2924/01056—Barium [Ba]
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- H01L2924/01074—Tungsten [W]
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- H01L2924/01079—Gold [Au]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US642743A US2953693A (en) | 1957-02-27 | 1957-02-27 | Semiconductor diode |
US649038A US3141119A (en) | 1957-03-28 | 1957-03-28 | Hyperconductive transistor switches |
Publications (1)
Publication Number | Publication Date |
---|---|
BE565109A true BE565109A (de) | 1900-01-01 |
Family
ID=27094103
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE566141D BE566141A (de) | 1957-02-27 | ||
BE565109D BE565109A (de) | 1957-02-27 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE566141D BE566141A (de) | 1957-02-27 |
Country Status (5)
Country | Link |
---|---|
BE (2) | BE565109A (de) |
CH (2) | CH369215A (de) |
DE (1) | DE1210088B (de) |
FR (1) | FR1205271A (de) |
GB (1) | GB886725A (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1169589B (de) * | 1960-07-19 | 1964-05-06 | Comp Generale Electricite | Gegen UEberspannung sich selbst schuetzendes Halbleiterbauelement, sowie Verfahren zum Herstellen und Schaltung eines solchen Halbleiterbauelements |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1639311C2 (de) * | 1968-03-08 | 1974-08-15 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Kontaktieren einer Halbleiteranordnung |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE489418A (de) * | 1948-06-26 |
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0
- BE BE566141D patent/BE566141A/xx unknown
- BE BE565109D patent/BE565109A/xx unknown
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1958
- 1958-02-03 DE DEW22698A patent/DE1210088B/de active Pending
- 1958-02-27 CH CH5640358A patent/CH369215A/de unknown
- 1958-03-21 GB GB9108/58A patent/GB886725A/en not_active Expired
- 1958-03-27 FR FR1205271D patent/FR1205271A/fr not_active Expired
- 1958-03-27 CH CH5757958A patent/CH369828A/de unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1169589B (de) * | 1960-07-19 | 1964-05-06 | Comp Generale Electricite | Gegen UEberspannung sich selbst schuetzendes Halbleiterbauelement, sowie Verfahren zum Herstellen und Schaltung eines solchen Halbleiterbauelements |
Also Published As
Publication number | Publication date |
---|---|
BE566141A (de) | 1900-01-01 |
CH369215A (de) | 1963-05-15 |
CH369828A (de) | 1963-06-15 |
DE1210088B (de) | 1966-02-03 |
FR1205271A (fr) | 1960-02-02 |
GB886725A (en) | 1962-01-10 |