BE565109A - - Google Patents

Info

Publication number
BE565109A
BE565109A BE565109DA BE565109A BE 565109 A BE565109 A BE 565109A BE 565109D A BE565109D A BE 565109DA BE 565109 A BE565109 A BE 565109A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE565109A publication Critical patent/BE565109A/xx
Priority claimed from US642743A external-priority patent/US2953693A/en
Priority claimed from US649038A external-priority patent/US3141119A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29001—Core members of the layer connector
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    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29109—Indium [In] as principal constituent
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    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
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    • H01L2924/19043—Component type being a resistor
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    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
BE565109D 1957-02-27 BE565109A (xx)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US642743A US2953693A (en) 1957-02-27 1957-02-27 Semiconductor diode
US649038A US3141119A (en) 1957-03-28 1957-03-28 Hyperconductive transistor switches

Publications (1)

Publication Number Publication Date
BE565109A true BE565109A (xx) 1900-01-01

Family

ID=27094103

Family Applications (2)

Application Number Title Priority Date Filing Date
BE565109D BE565109A (xx) 1957-02-27
BE566141D BE566141A (xx) 1957-02-27

Family Applications After (1)

Application Number Title Priority Date Filing Date
BE566141D BE566141A (xx) 1957-02-27

Country Status (5)

Country Link
BE (2) BE566141A (xx)
CH (2) CH369215A (xx)
DE (1) DE1210088B (xx)
FR (1) FR1205271A (xx)
GB (1) GB886725A (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1169589B (de) * 1960-07-19 1964-05-06 Comp Generale Electricite Gegen UEberspannung sich selbst schuetzendes Halbleiterbauelement, sowie Verfahren zum Herstellen und Schaltung eines solchen Halbleiterbauelements

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1639311C2 (de) * 1968-03-08 1974-08-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Kontaktieren einer Halbleiteranordnung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL84061C (xx) * 1948-06-26

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1169589B (de) * 1960-07-19 1964-05-06 Comp Generale Electricite Gegen UEberspannung sich selbst schuetzendes Halbleiterbauelement, sowie Verfahren zum Herstellen und Schaltung eines solchen Halbleiterbauelements

Also Published As

Publication number Publication date
CH369215A (de) 1963-05-15
BE566141A (xx) 1900-01-01
GB886725A (en) 1962-01-10
DE1210088B (de) 1966-02-03
FR1205271A (fr) 1960-02-02
CH369828A (de) 1963-06-15

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