GB887542A - Improvements in or relating to the manufacture of junction transistors - Google Patents

Improvements in or relating to the manufacture of junction transistors

Info

Publication number
GB887542A
GB887542A GB4043459A GB4043459A GB887542A GB 887542 A GB887542 A GB 887542A GB 4043459 A GB4043459 A GB 4043459A GB 4043459 A GB4043459 A GB 4043459A GB 887542 A GB887542 A GB 887542A
Authority
GB
United Kingdom
Prior art keywords
manufacture
relating
junction transistors
indium
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4043459A
Inventor
Tony Charles Denton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL258171D priority Critical patent/NL258171A/xx
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB4043459A priority patent/GB887542A/en
Priority to DEG31005A priority patent/DE1129623B/en
Priority to FR845026A priority patent/FR1274235A/en
Publication of GB887542A publication Critical patent/GB887542A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The following alloys (percentages by weight) are used in the manufacture of transistors (see Group XXXVI): 99,5% indium, 0,25% gallium; and 25% gold; 99,75% indium, 0,25% gallium; 99,75% indium, 0,25% gold.
GB4043459A 1959-11-27 1959-11-27 Improvements in or relating to the manufacture of junction transistors Expired GB887542A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
NL258171D NL258171A (en) 1959-11-27
GB4043459A GB887542A (en) 1959-11-27 1959-11-27 Improvements in or relating to the manufacture of junction transistors
DEG31005A DE1129623B (en) 1959-11-27 1960-11-25 Method for manufacturing area transistors
FR845026A FR1274235A (en) 1959-11-27 1960-11-25 Manufacture of junction transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4043459A GB887542A (en) 1959-11-27 1959-11-27 Improvements in or relating to the manufacture of junction transistors

Publications (1)

Publication Number Publication Date
GB887542A true GB887542A (en) 1962-01-17

Family

ID=10414888

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4043459A Expired GB887542A (en) 1959-11-27 1959-11-27 Improvements in or relating to the manufacture of junction transistors

Country Status (3)

Country Link
DE (1) DE1129623B (en)
GB (1) GB887542A (en)
NL (1) NL258171A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1343186A2 (en) * 2002-03-06 2003-09-10 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and fuse element thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2765245A (en) * 1952-08-22 1956-10-02 Gen Electric Method of making p-n junction semiconductor units
NL94467C (en) * 1954-02-27

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1343186A2 (en) * 2002-03-06 2003-09-10 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and fuse element thereof
EP1343186B1 (en) * 2002-03-06 2007-01-03 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and fuse element thereof

Also Published As

Publication number Publication date
DE1129623B (en) 1962-05-17
NL258171A (en)

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