GB876332A - Improvements in or relating to semi-conductor devices and methods of producing such devices - Google Patents
Improvements in or relating to semi-conductor devices and methods of producing such devicesInfo
- Publication number
- GB876332A GB876332A GB29348/59A GB2934859A GB876332A GB 876332 A GB876332 A GB 876332A GB 29348/59 A GB29348/59 A GB 29348/59A GB 2934859 A GB2934859 A GB 2934859A GB 876332 A GB876332 A GB 876332A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- type
- base
- emitter
- cross
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000007423 decrease Effects 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000001953 recrystallisation Methods 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000011888 foil Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES59587A DE1094886B (de) | 1958-08-27 | 1958-08-27 | Halbleiteranordnung mit Kollektorelektrode, insbesondere Transistor fuer hohe Frequenzen und grosse Verlustleistung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB876332A true GB876332A (en) | 1961-08-30 |
Family
ID=7493419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB29348/59A Expired GB876332A (en) | 1958-08-27 | 1959-08-27 | Improvements in or relating to semi-conductor devices and methods of producing such devices |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH384720A (enrdf_load_stackoverflow) |
| DE (1) | DE1094886B (enrdf_load_stackoverflow) |
| FR (1) | FR1232180A (enrdf_load_stackoverflow) |
| GB (1) | GB876332A (enrdf_load_stackoverflow) |
| NL (1) | NL242556A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1281584B (de) * | 1963-01-30 | 1968-10-31 | Gen Electric | Halbleiterbauelement mit einem Halbleiterkoerper aus Silizium oder Germanium mit einem oder mehreren diffundierten PN-UEbergaengen |
| US3697829A (en) * | 1968-12-30 | 1972-10-10 | Gen Electric | Semiconductor devices with improved voltage breakdown characteristics |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL280849A (enrdf_load_stackoverflow) * | 1961-07-12 | 1900-01-01 | ||
| JPS58170044A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 半導体素子 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1036393B (de) * | 1954-08-05 | 1958-08-14 | Siemens Ag | Verfahren zur Herstellung von zwei p-n-UEbergaengen in Halbleiterkoerpern, z. B. Flaechentransistoren |
| DE1035780B (de) * | 1955-08-29 | 1958-08-07 | Ibm Deutschland | Transistor mit eigenleitender Zone |
-
0
- NL NL242556D patent/NL242556A/xx unknown
-
1958
- 1958-08-27 DE DES59587A patent/DE1094886B/de active Pending
-
1959
- 1959-08-11 FR FR802552A patent/FR1232180A/fr not_active Expired
- 1959-08-19 CH CH7712859A patent/CH384720A/de unknown
- 1959-08-27 GB GB29348/59A patent/GB876332A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1281584B (de) * | 1963-01-30 | 1968-10-31 | Gen Electric | Halbleiterbauelement mit einem Halbleiterkoerper aus Silizium oder Germanium mit einem oder mehreren diffundierten PN-UEbergaengen |
| US3697829A (en) * | 1968-12-30 | 1972-10-10 | Gen Electric | Semiconductor devices with improved voltage breakdown characteristics |
Also Published As
| Publication number | Publication date |
|---|---|
| NL242556A (enrdf_load_stackoverflow) | |
| FR1232180A (fr) | 1960-10-06 |
| CH384720A (de) | 1965-02-26 |
| DE1094886B (de) | 1960-12-15 |
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