GB869933A - Semi-conductor units and methods of making them - Google Patents
Semi-conductor units and methods of making themInfo
- Publication number
- GB869933A GB869933A GB27230/57A GB2723057A GB869933A GB 869933 A GB869933 A GB 869933A GB 27230/57 A GB27230/57 A GB 27230/57A GB 2723057 A GB2723057 A GB 2723057A GB 869933 A GB869933 A GB 869933A
- Authority
- GB
- United Kingdom
- Prior art keywords
- block
- metal
- members
- aug
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 5
- 229910052751 metal Inorganic materials 0.000 abstract 5
- 238000007789 sealing Methods 0.000 abstract 2
- 238000003466 welding Methods 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 239000011324 bead Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
869,933. Transistors. PHILCO CORPORATION. Aug. 29, 1957 [Aug. 29, 1956], No. 27230/57. Class 37. [Also in Group XXII] A semi-conductor device comprises an envelope consisting of two metal members, one of which is in thermal contact with the semiconductor element of the device, the envelope being hermetically sealed by welding the two members together by cold welding. As shown, a power transistor is mounted by its collector electrode 19 on a projection 27 on a metal block 11, and lead wires 22, 23, 24 pass through a glass bead 25 which is sealed to a metal sleeve 26 inserted in a bore in the block 11. The block 11 and a metal cap 13, both preferably of copper, comprise flanges which are squeezed together under high pressure, e.g. 10<5> p.s.i., by annular tool jaw members (not shown) in a dry air or inert gas atmosphere to form an annular seal 10. Alternatively, the sealing may be performed by dies applied to reduce the thickness of the original flanges by 70-90%. An annular groove 29 in the block 11 accommodates the inward flow of metal during the sealing process. The block 11 forms part of a heat sink for conducting away heat generated during operation of the transistor, and is clamped in good thermal contact with a larger heat sink element 16 by screws 18 which engage a ring 17 bearing down on the annular seal 10. Reference has been directed by the Comptroller to Specification. 775,191.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US869933XA | 1956-08-29 | 1956-08-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB869933A true GB869933A (en) | 1961-06-07 |
Family
ID=22202179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB27230/57A Expired GB869933A (en) | 1956-08-29 | 1957-08-29 | Semi-conductor units and methods of making them |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB869933A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10319654B1 (en) * | 2017-12-01 | 2019-06-11 | Cubic Corporation | Integrated chip scale packages |
-
1957
- 1957-08-29 GB GB27230/57A patent/GB869933A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10319654B1 (en) * | 2017-12-01 | 2019-06-11 | Cubic Corporation | Integrated chip scale packages |
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