GB841158A - Improvements in or relating to junction rectifiers or transistors - Google Patents
Improvements in or relating to junction rectifiers or transistorsInfo
- Publication number
- GB841158A GB841158A GB33014/56A GB3301456A GB841158A GB 841158 A GB841158 A GB 841158A GB 33014/56 A GB33014/56 A GB 33014/56A GB 3301456 A GB3301456 A GB 3301456A GB 841158 A GB841158 A GB 841158A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitter
- electrodes
- semi
- base
- mould
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/645—Combinations of only lateral BJTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Electromagnets (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES46168A DE1167986B (de) | 1955-10-29 | 1955-10-29 | Flaechentransistor mit einem scheibenfoermigen Halbleiterkoerper und mit streifenfoermigen Basis- und Emitterelektroden |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB841158A true GB841158A (en) | 1960-07-13 |
Family
ID=7485869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB33014/56A Expired GB841158A (en) | 1955-10-29 | 1956-10-29 | Improvements in or relating to junction rectifiers or transistors |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH354170A (OSRAM) |
| DE (1) | DE1167986B (OSRAM) |
| FR (1) | FR1162732A (OSRAM) |
| GB (1) | GB841158A (OSRAM) |
| NL (1) | NL211758A (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115655832A (zh) * | 2022-12-09 | 2023-01-31 | 华芯半导体研究院(北京)有限公司 | 一种化合物半导体外延片霍尔样品制备装置 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1111298B (de) * | 1959-04-28 | 1961-07-20 | Licentia Gmbh | Elektrisch unsymmetrisch leitende Halbleiteranordnung |
| DE1156508B (de) * | 1959-09-30 | 1963-10-31 | Siemens Ag | Steuerbares und schaltendes Vierschichthalbleiterbauelement |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2677793A (en) * | 1948-07-20 | 1954-05-04 | Sylvania Electric Prod | Crystal amplifier |
| DE916084C (de) * | 1949-02-11 | 1954-08-02 | Siemens Ag | Elektrisch steuerbarer Halbleitergleichrichter |
| BE494845A (OSRAM) * | 1949-03-31 | |||
| CA509126A (en) * | 1949-05-28 | 1955-01-11 | Western Electric Company, Incorporated | Semiconductor translating devices |
| BE520677A (OSRAM) * | 1950-09-29 |
-
0
- NL NL211758D patent/NL211758A/xx unknown
-
1955
- 1955-10-29 DE DES46168A patent/DE1167986B/de active Pending
-
1956
- 1956-10-26 CH CH354170D patent/CH354170A/de unknown
- 1956-10-29 FR FR1162732D patent/FR1162732A/fr not_active Expired
- 1956-10-29 GB GB33014/56A patent/GB841158A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115655832A (zh) * | 2022-12-09 | 2023-01-31 | 华芯半导体研究院(北京)有限公司 | 一种化合物半导体外延片霍尔样品制备装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1162732A (fr) | 1958-09-16 |
| DE1167986B (de) | 1964-04-16 |
| CH354170A (de) | 1961-05-15 |
| NL211758A (OSRAM) |
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