CH354170A - Flächengleichrichter bzw. -transistor - Google Patents

Flächengleichrichter bzw. -transistor

Info

Publication number
CH354170A
CH354170A CH354170DA CH354170A CH 354170 A CH354170 A CH 354170A CH 354170D A CH354170D A CH 354170DA CH 354170 A CH354170 A CH 354170A
Authority
CH
Switzerland
Prior art keywords
transistor
surface rectifier
rectifier
Prior art date
Application number
Other languages
English (en)
Inventor
Horst Dipl Phys Irmler
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH354170A publication Critical patent/CH354170A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnets (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Electrodes Of Semiconductors (AREA)
CH354170D 1955-10-29 1956-10-26 Flächengleichrichter bzw. -transistor CH354170A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES46168A DE1167986B (de) 1955-10-29 1955-10-29 Flaechentransistor mit einem scheibenfoermigen Halbleiterkoerper und mit streifenfoermigen Basis- und Emitterelektroden

Publications (1)

Publication Number Publication Date
CH354170A true CH354170A (de) 1961-05-15

Family

ID=7485869

Family Applications (1)

Application Number Title Priority Date Filing Date
CH354170D CH354170A (de) 1955-10-29 1956-10-26 Flächengleichrichter bzw. -transistor

Country Status (5)

Country Link
CH (1) CH354170A (de)
DE (1) DE1167986B (de)
FR (1) FR1162732A (de)
GB (1) GB841158A (de)
NL (1) NL211758A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1111298B (de) * 1959-04-28 1961-07-20 Licentia Gmbh Elektrisch unsymmetrisch leitende Halbleiteranordnung
DE1156508B (de) * 1959-09-30 1963-10-31 Siemens Ag Steuerbares und schaltendes Vierschichthalbleiterbauelement
CN115655832A (zh) * 2022-12-09 2023-01-31 华芯半导体研究院(北京)有限公司 一种化合物半导体外延片霍尔样品制备装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2677793A (en) * 1948-07-20 1954-05-04 Sylvania Electric Prod Crystal amplifier
DE916084C (de) * 1949-02-11 1954-08-02 Siemens Ag Elektrisch steuerbarer Halbleitergleichrichter
NL152375C (de) * 1949-03-31
CA509126A (en) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Semiconductor translating devices
BE520677A (de) * 1950-09-29

Also Published As

Publication number Publication date
DE1167986B (de) 1964-04-16
FR1162732A (fr) 1958-09-16
GB841158A (en) 1960-07-13
NL211758A (de)

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