GB831968A - Improvements in semi-conductor devices and circuits therefor - Google Patents

Improvements in semi-conductor devices and circuits therefor

Info

Publication number
GB831968A
GB831968A GB15730/56A GB1573056A GB831968A GB 831968 A GB831968 A GB 831968A GB 15730/56 A GB15730/56 A GB 15730/56A GB 1573056 A GB1573056 A GB 1573056A GB 831968 A GB831968 A GB 831968A
Authority
GB
United Kingdom
Prior art keywords
collector
emitter
region
regions
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB15730/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB831968A publication Critical patent/GB831968A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Amplifiers (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

831,968. Transistors. INTERNATIONAL BUSINESS MACHINES CORPORATION. May 22, 1956 [May 20, 1955], No. 15730/56. Class 37. [Also in Group XL (c)] A semi-conductor device comprises a body 1 of one conductivity type with a hook or point contact collector 8 and an emitter 7, and further electrode means comprising two portions 3 and 4 of opposite conductivity type respectively spaced less than the diffusion length from the collector and emitter electrodes. As shown in Fig. 2, the body also has an ohmic base electrode 9. The arrangement provides two transistors in series whereby region 4 acts as a collector to point contact emitter 7 and region 3, which is connected to region 4, acts as an emitter to collector 8. Battery 13 applies a negative bias to collector 8 while base 9 is earthed, the arrangement being such that the PN junction at region 3 is slightly forward biased and that at region 4 is reverse biased. In the absence of a signal at emitter 7, there is substantially no current through collector 8 and the transistor is OFF. If a positive pulse is applied to emitter 7 via resistor 19, current passes through the two transistor sections providing an output across resistor 12 connected to collector 8. Current ceases when the pulse ceases. Fig. 3 shows a modification of the circuit of Fig. 2 in which a second series of input signals may be applied to regions 3 and 4. An output appears at collector 8 only when a signal is applied both to emitter 7 and to regions 3 and 4. The input signal consists of a 10-volt positive bias to emitter 7 and a 0.2 volt negative bias to regions 3 and 4. The arrangement may constitute a coincidence or AND circuit, or a mixing or OR circuit.
GB15730/56A 1955-05-20 1956-05-22 Improvements in semi-conductor devices and circuits therefor Expired GB831968A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US831968XA 1955-05-20 1955-05-20

Publications (1)

Publication Number Publication Date
GB831968A true GB831968A (en) 1960-04-06

Family

ID=22176791

Family Applications (1)

Application Number Title Priority Date Filing Date
GB15730/56A Expired GB831968A (en) 1955-05-20 1956-05-22 Improvements in semi-conductor devices and circuits therefor

Country Status (3)

Country Link
DE (1) DE1035778B (en)
FR (1) FR1167593A (en)
GB (1) GB831968A (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE490958A (en) * 1948-09-24
NL152375C (en) * 1949-03-31
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
BE495936A (en) * 1949-10-11

Also Published As

Publication number Publication date
DE1035778B (en) 1958-08-07
FR1167593A (en) 1958-11-26
DE1035778C2 (en) 1959-01-29

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