GB820192A - Process of producing pure silicon - Google Patents
Process of producing pure siliconInfo
- Publication number
- GB820192A GB820192A GB22874/57A GB2287457A GB820192A GB 820192 A GB820192 A GB 820192A GB 22874/57 A GB22874/57 A GB 22874/57A GB 2287457 A GB2287457 A GB 2287457A GB 820192 A GB820192 A GB 820192A
- Authority
- GB
- United Kingdom
- Prior art keywords
- reactor
- silane
- methane
- silicon
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract 11
- 239000010703 silicon Substances 0.000 title abstract 11
- 238000000034 method Methods 0.000 title abstract 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 239000011261 inert gas Substances 0.000 abstract 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 6
- 229910000077 silane Inorganic materials 0.000 abstract 6
- 239000001257 hydrogen Substances 0.000 abstract 5
- 229910052739 hydrogen Inorganic materials 0.000 abstract 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 4
- 229910052786 argon Inorganic materials 0.000 abstract 4
- 229910052799 carbon Inorganic materials 0.000 abstract 4
- 229910021397 glassy carbon Inorganic materials 0.000 abstract 4
- 150000004756 silanes Chemical class 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 abstract 3
- 229960004424 carbon dioxide Drugs 0.000 abstract 3
- 235000011089 carbon dioxide Nutrition 0.000 abstract 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 238000005299 abrasion Methods 0.000 abstract 2
- 238000001035 drying Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000001307 helium Substances 0.000 abstract 2
- 229910052734 helium Inorganic materials 0.000 abstract 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 2
- 238000007654 immersion Methods 0.000 abstract 2
- 229910052754 neon Inorganic materials 0.000 abstract 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 abstract 2
- 229910052756 noble gas Inorganic materials 0.000 abstract 2
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 abstract 2
- 239000005052 trichlorosilane Substances 0.000 abstract 2
- 238000005406 washing Methods 0.000 abstract 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 abstract 1
- 229910010084 LiAlH4 Inorganic materials 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 239000012280 lithium aluminium hydride Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 238000010992 reflux Methods 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Pure silicon is produced by the thermal decomposition of silane or partially chlorinated silane in a silica reactor the inside walls of which are lined with a layer of vitreous carbon upon which the silicon is deposited. Methane which may be diluted with an inert gas, e.g. 1-100% methane: 0-99% inert gas preferably 10% methane: 90% inert gas is passed through a silica reactor heated in a furnace to 1000-1200 DEG C. preferably 1000-1100 DEG C. to deposit a vitreous layer of carbon on the inside walls of the reactor. The inert gas may be any noble gas, e.g. helium, neon or argon, or hydrogen, and the reactor may be cylindrical, polygonal or conical in shape. The flow of methane is interrupted and silane vapour or vapour of a partially chlorinated silane, which may be diluted with hydrogen or argon, is passed through the reactor at 600-1200 DEG C. Trichlorosilane is preferably employed at 900-1000 DEG C. When sufficient silicon has collected in the reactor it is allowed to cool to ambient temperature and the product removed. Vitreous carbon contaminating the silicon is removed by mechanical abrasion and/or by immersion in an etching solution of nitric acid (1 part) hydrofluoric acid (2 parts) in water (50%) whereby carbon separates and floats off leaving pure silicon which is washed with aqueous HCl and dried. The reactor after washing and drying is ready for re-use. Pure silane for use in the above process is prepared by reacting purified SiCl4 with LiAlH4 in a continuous manner in excess anhydrous ether over a period of some hours in an atmosphere of H2. Silane so produced is purified by passage together with 2-3 volumes of purified hydrogen through a reflux condenser cooled by dry-ice/acetone, a dry-ice cooled trap, an activated carbon bed, a dry-ice cooled trap and thence to the reactor.ALSO:Pure silicon is produced by the thermal decomposition of silane or partially chlorinated silane in a silica reactor the inside walls of which are lined with a layer of vitreous carbon upon which the silicon is deposited. Methane which may be diluted with an inert gas e.g. 1-100% methane : 0-99% inert gas preferably 10% methane : 90% inert gas is passed through a silica reactor heated in a furnace to 1000-1200 DEG C. to deposit a vitreous layer of carbon on the inside walls of the reactor. The inert gases may be any noble gas e.g. helium, neon or argon, or hydrogen and the reactor may be cylindrical, polygonal or conical in shape. The flow of methane is interrupted and silane vapour or vapour of a partially chlorinated silane, which may be diluted with hydrogen or argon, is passed through the reactor at 600-1200 DEG C. Trichloro silane is preferably employed at 900-1000 DEG C. When sufficient silicon has collected in the reactor it is allowed to cool to ambient temperature and the product removed. Vitreous carbon contaminating the silicon is removed by mechanical abrasion and/or immersion in an etching solution whereby carbon separates and floats off leaving pure silicon which is washed with aqueous HCl and dried. The reactor after washing and drying is ready for p re-use.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US820192XA | 1956-07-26 | 1956-07-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB820192A true GB820192A (en) | 1959-09-16 |
Family
ID=22168512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB22874/57A Expired GB820192A (en) | 1956-07-26 | 1957-07-19 | Process of producing pure silicon |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1050321B (en) |
| GB (1) | GB820192A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3069244A (en) * | 1959-07-17 | 1962-12-18 | Int Standard Electric Corp | Production of silicon |
| CN102247933A (en) * | 2011-03-22 | 2011-11-23 | 江西赛维Ldk太阳能高科技有限公司 | Method for purifying silicon powder |
| CN102040222B (en) * | 2009-10-23 | 2012-09-19 | 上海九晶电子材料股份有限公司 | Method for separating silicon material from heavily doped silicon material |
-
0
- DE DENDAT1050321D patent/DE1050321B/en active Pending
-
1957
- 1957-07-19 GB GB22874/57A patent/GB820192A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3069244A (en) * | 1959-07-17 | 1962-12-18 | Int Standard Electric Corp | Production of silicon |
| CN102040222B (en) * | 2009-10-23 | 2012-09-19 | 上海九晶电子材料股份有限公司 | Method for separating silicon material from heavily doped silicon material |
| CN102247933A (en) * | 2011-03-22 | 2011-11-23 | 江西赛维Ldk太阳能高科技有限公司 | Method for purifying silicon powder |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1050321B (en) | 1959-02-12 |
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